SIR878DP-T1-GE3

SiR878DP Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.014 at VGS = 10 V 40 100 0.0148 at VGS = 7.5 V 38 0.019 at VGS = 4.5 V 34 Qg (Typ.) 13.6 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Primary Side Switch • Telecom/Server 48 V, Full/Half-Bridge DC/DC • Industrial PowerPAK® SO-8 S 6.15 mm 5.15 mm 1 S 2 D S 3 G 4 D 8 D 7 D G 6 D 5 S Bottom View N-Channel MOSFET Ordering Information: SiR878DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Pulsed Drain Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg Limit 100 ± 20 Unit V 40 32 13.3b, c 10.6b, c 80 40 A 4.5b, c 20 20 44.5 28.5 mJ 5b, c 3.2b, c - 55 to 150 260 W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t ≤ 10 s 20 25 Maximum Junction-to-Ambientb, f °C/W RthJC Steady State Maximum Junction-to-Case (Drain) 2.1 2.8 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. Document Number: 65939 S10-2685-Rev. B, 22-Nov-10 www.vishay.com 1 SiR878DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0, ID = 250 µA 100 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage V 50 ID = 250 µA mV/°C - 5.5 VGS(th) VDS = VGS, ID = 250 µA 2.8 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 VDS = 100 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V VGS = 10 V, ID = 15 A 0.0114 0.014 RDS(on) VGS = 7.5 V, ID = 12 A 0.0120 0.0148 VGS = 4.5 V, ID = 10 A 0.0152 0.0190 VDS = 10 V, ID = 15 A 34 Drain-Source On-State Resistancea Forward Transconductancea gfs 1.2 30 µA A Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1250 VDS = 50 V, VGS = 0 V, f = 1 MHz 680 VDS = 50 V, VGS = 10 V, ID = 10 A 28.3 43 21.6 33 13.6 20.5 nC 2.3 4.6 Ω 9 18 11 22 50 Total Gate Charge Qg VDS = 50 V, VGS = 7.5 V, ID = 10 A Gate-Source Charge Qgs VDS = 50 V, VGS = 4.5 V, ID = 10 A Gate-Drain Charge Qgd Gate Resistance Rg tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 28 55 10 20 td(on) 12 24 13 26 td(off) VDD = 50 V, RL = 5 Ω ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω tf Fall Time 0.5 tf tr Rise Time Turn-Off Delay Time 3.7 6.4 td(on) Turn-On Delay Time pF 27 50 7 14 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage IS TC = 25 °C 40 ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 80 IS = 4 A IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C A 0.76 1.1 V 45 90 ns 50 100 nC 21 24 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65939 S10-2685-Rev. B, 22-Nov-10 SiR878DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 10 V GS = 10 V thru 5 V 48 8 I D - Drain Current (A) I D - Drain Current (A) 64 V GS = 4 V 32 16 6 4 T C = 25 °C 2 T C = 125 °C V GS = 3 V 0 T C = - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 0.035 0.028 1760 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 2200 0.021 V GS = 4.5 V V GS = 7.5 V 0.014 V GS = 10 V Ciss 1320 880 Coss 440 0.007 Crss 0 0.000 0 0 16 32 48 ID - Drain Current (A) 64 20 40 60 80 V DS - Drain-to-Source Voltage (V) 80 Capacitance On-Resistance vs. Drain Current and Gate Voltage Capacitance 2.0 10 R DS(on) - On-Resistance (Normalized) ID = 10 A VGS - Gate-to-Source Voltage (V) 100 8 V DS = 25 V 6 V DS = 50 V V DS = 75 V 4 2 0 0 6 12 18 24 Qg - Total Gate Charge (nC) Gate Charge Document Number: 65939 S10-2685-Rev. B, 22-Nov-10 30 ID = 15 A 1.7 V GS = 10 V 1.4 V GS = 4.5 V 1.1 0.8 0.5 - 50 - 25 0 25 50 75 100 T J - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature www.vishay.com 3 SiR878DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 0.080 10 0.064 R DS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 15 A T J = 150 °C 1 T J = 25 °C 0.1 0.048 0.032 T J = 125 °C 0.01 0.016 0.001 0.0 0.000 T J = 25 °C 0.2 0.4 0.6 0.8 1.0 V SD - Source-to-Drain Voltage (V) 1.2 0 Source-Drain Diode Forward Voltage 2 3 4 5 6 7 8 V GS - Gate-to-Source Voltage (V) 9 10 On-Resistance vs. Gate-to-Source Voltage 0.4 200 0.2 160 0.0 - 0.2 ID = 5 mA Power (W) VGS(th) Variance (V) 1 120 80 - 0.4 ID = 250 μA 40 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 T J - Temperature (°C) 125 150 0 0 .001 0.01 0.1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by R DS(on)* I D - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s TA = 25 °C Single Pulse BVDSS Limited 0.01 0.01 DC 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 65939 S10-2685-Rev. B, 22-Nov-10 SiR878DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 45 I D - Drain Current (A) 36 27 18 9 0 0 25 50 75 100 125 T C - Case Temperature (°C) 150 55 2.5 44 2.0 33 1.5 Power (W) Power (W) Current Derating* 22 11 1.0 0.5 0 0.0 0 25 50 75 100 125 T C - Case Temperature (°C) Power, Junction-to-Case 150 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power, Junction-to-Ambient * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65939 S10-2685-Rev. B, 22-Nov-10 www.vishay.com 5 SiR878DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65939. www.vishay.com 6 Document Number: 65939 S10-2685-Rev. 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