SIR814DP-T1-GE3

SiR814DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0021 at VGS = 10 V 60 0.0029 at VGS = 4.5 V 60 Qg (Typ.) 27 nC PowerPAK® SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • • • S 3 G 4 D 8 D 7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Low Qg for High Efficiency • Compliant to RoHS Directive 2002/95/EC D Synchronous Rectification DC/DC Converter POL IBC Industrial G D 6 D 5 Bottom View S N-Channel MOSFET Ordering Information: SiR814DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Symbol Limit Drain-Source Voltage Parameter VDS 40 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C 60a ID 40.6b, c 32.5b, c 100 TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L =0.1 mH TC = 70 °C TA = 25 °C 5.6b, c IAS 40 EAS mJ 80 104 66.6 PD W 6.25b, c 4.0b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 60a IS TC = 25 °C Maximum Power Dissipation V 60a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit - 55 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t  10 s RthJA 15 20 Steady State RthJC 0.9 1.2 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 54 °C/W. Document Number: 67191 S11-0244-Rev. A, 14-Feb-11 www.vishay.com 1 SiR814DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA IGSS Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V mV/°C - 5.2 2.3 V VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 55 °C 10 VDS 5 V, VGS = 10 V 1.0 30 µA A VGS = 10 V, ID = 20 A 0.0017 0.0021 VGS = 4.5 V, ID = 20 A 0.0024 0.0029 VDS = 15 V, ID = 20 A 84 VDS = 20 V, VGS = 0 V, f = 1 MHz 3800  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 3800 260 VDS = 20 V, VGS = 10 V, ID = 20 A VDS = 20 V, VGS = 4.5 V, ID = 20 A td(off) 57 86 27 41 9 f = 1 MHz VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  0.4 1.2 2.2 18 35 11 20 40 80 tf 10 20 td(on) 47 90 82 160 tr td(off) nC 6.6 td(on) tr pF VDD = 20 V, RL = 2  ID  10 A, VGEN = 4.5 V, Rg = 1  tf 47 90 25 50  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 °C 60 100 IS = 5 A 0.71 1.1 A V Body Diode Reverse Recovery Time trr 68 135 ns Body Diode Reverse Recovery Charge Qrr 65 130 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 28 40 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 67191 S11-0244-Rev. A, 14-Feb-11 SiR814DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 80 V GS = 3 V V GS = 10 V thru 4 V 8 ID - Drain Current (A) ID - Drain Current (A) 64 48 32 6 4 T C = 25 °C 2 16 T C = 125 °C V GS = 2 V 0 0.0 0.5 1.0 1.5 2.0 0 2.5 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 8000 0.0030 6400 0.0026 RDS(on) - On-Resistance (Ω) T C = - 55 °C 0 0.0022 0.0018 Coss C - Capacitance (pF) V GS = 4.5 V V GS = 10 V 4800 Ciss 3200 1600 0.0014 Crss 0 0.0010 0 16 32 48 64 0 80 8 16 32 40 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current and Gate Voltage 2.0 10 ID = 20 A ID = 20 A 1.7 V DS = 20 V 6 V DS = 10 V V DS = 30 V 4 (Normalized) 8 RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 24 V GS = 10 V 1.4 V GS = 4.5 V 1.1 0.8 2 0 0 12 24 36 48 60 0.5 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 67191 S11-0244-Rev. A, 14-Feb-11 150 www.vishay.com 3 SiR814DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.015 100 ID = 20 A T J = 150 °C 1 0.1 0.012 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 T J = 25 °C 0.009 0.006 0.01 0.003 0.001 0.000 T J = 125 °C T J = 25 °C 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 0.2 160 - 0.1 120 Power (W) VGS(th) Variance (V) 200 ID = 5 mA - 0.4 ID = 250 μA - 25 0 25 50 75 8 10 On-Resistance vs. Gate-to-Source Voltage 0.5 - 1.0 - 50 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage - 0.7 4 100 125 80 40 0 0 .001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by R DS(on)* 1 ms ID - Drain Current (A) 10 10 ms 100 ms 1 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 67191 S11-0244-Rev. A, 14-Feb-11 SiR814DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 ID - Drain Current (A) 160 120 80 Package Limited 40 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 125 3.0 100 2.4 75 1.8 Power (W) Power (W) Current Derating* 50 25 1.2 0.6 0 0.0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 67191 S11-0244-Rev. A, 14-Feb-11 www.vishay.com 5 SiR814DP Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 54 °C/W 0.02 3. T JM - T A = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67191. www.vishay.com 6 Document Number: 67191 S11-0244-Rev. 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