SIS435DNT-T1-GE3

SiS435DNT Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES • TrenchFET® Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a 0.0054 at VGS = - 4.5V - 30a 0.0060 at VGS = - 3.7 V - 30a 0.0083 at VGS = - 2.5 V - 30a 0.0140 at VGS = - 1.8 V - 30a Qg (Typ.) 57 nC APPLICATIONS • Smart Phones, Tablet PCs, and Thin PowerPAK® 1212-8 S 3.3 mm Mobile Computing - Battery Switch - Load Switch - Power Management - Battery Management 33 1 S 2 • Thin 0.8 mm max. height • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S 3 G 4 S G 0.8 mm D 8 D 7 3.3 mm D D 6 D 5 P-Channel MOSFET Bottom View Ordering Information: SiS435DNT-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) ID IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e Unit V - 30a TC = 25 °C Continuous Drain Current (TJ = 150 °C) Limit - 20 ±8 TJ, Tstg - 30a - 22b, c - 17b, c - 80 - 30a - 3.1b, c - 20 20 39 25 3.7b, c 2.4b, c - 55 to 150 260 A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t  10 s RthJA 24 33 Maximum Junction-to-Ambientb, f °C/W 2.4 3.2 Maximum Junction-to-Case (Drain) Steady State RthJC Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 81 °C/W. Document Number: 63264 S13-0465-Rev. A, 04-Mar-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS435DNT Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Transconductancea gfs Forward V - 16 mV/°C 2.9 - 0.4 - 0.9 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS - 5 V, VGS = - 4.5 V - 20 µA A VGS = - 4.5 V, ID = - 13 A 0.0044 0.0054 VGS = - 3.7 V, ID = - 10 A 0.0048 0.0060 VGS = - 2.5 V, ID = - 10 A 0.0065 0.0083 VGS = - 1.8 V, ID = - 5 A 0.0110 0.0140 VDS = - 10 V, ID = - 13 A 55  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 5700 VDS = - 10 V, VGS = 0 V, f = 1 MHz 585 VDS = - 10 V, VGS = - 8 V, ID = - 20 A VDS = - 10 V, VGS = - 4.5 V, ID = - 20 A Turn-On Delay Time VDD = - 10 V, RL = 1  ID  - 10 A, VGEN = - 4.5 V, Rg = 1  tr td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 86 7.4 0.8 3.8 7.6 40 80 30 60 100 200 tf 30 60 15 30 10 20 110 220 25 50 VDD = - 10 V, RL = 1  ID  - 10 A, VGEN = - 8 V, Rg = 1  td(off) Turn-Off Delay Time tf Fall Time 180 57 td(on) tr Rise Time 98 nC 13.1 f = 1 MHz td(on) Rise Time pF 620  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD - 30 - 80 IS = - 10 A, VGS = 0 V - 0.8 - 1.2 A V Body Diode Reverse Recovery Time trr 19 40 ns Body Diode Reverse Recovery Charge Qrr 10 20 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 9 10 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63264 S13-0465-Rev. A, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS435DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 20 VGS = 5 V thru 2.5 V VGS = 2 V 16 ID - Drain Current (A) ID - Drain Current (A) 60 40 VGS = 1.5 V 20 TC = 25 °C 12 8 TC = 125 °C 4 TC = - 55 °C VGS = 1 V 0 0 0.0 0.5 1.0 1.5 0.0 2.0 0.3 Output Characteristics 0.9 1.2 1.5 Transfer Characteristics 0.0400 8000 Ciss VGS = 1.8 V 0.0300 6000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.6 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.0200 VGS = 3.7 V 0.0100 4000 2000 VGS = 2.5 V Coss, C rss VGS = 4.5 V 0.0000 0 0 20 40 60 80 0 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 RDS(on) - On-Resistance (Normalized) 8 VGS - Gate-to-Source Voltage (V) 5 ID = 20 A 6 VDS = 10 V VDS = 5 V 4 VDS = 16 V 2 VGS = 4.5 V, 3.7 V ID = 13 A 1.4 VGS = 2.5 V 1.2 VGS = 1.8 V 1.0 0.8 0.6 0 0 25 50 75 100 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 63264 S13-0465-Rev. A, 04-Mar-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS435DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.030 100 TJ = 150 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.025 10 TJ = 25 °C 1 ID = 13 A 0.020 0.015 0.010 TJ = 125 °C 0.005 0.1 TJ = 25 °C 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 80 0.8 0.7 60 Power (W) VGS(th) (V) 0.6 0.5 ID = 250 μA 40 0.4 20 0.3 0 0.001 0.2 - 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 Limited by RDS(on)* ID - Drain Current (A) 100 100 μs 10 1 ms 10 ms 1 100 ms 0.1 1s 10 s DC TA = 25 °C BVDSS Limited 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63264 S13-0465-Rev. A, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS435DNT Vishay Siliconix 80 40 60 30 Power (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 40 Package Limited 20 10 20 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating, Junction-to-Case * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 63264 S13-0465-Rev. A, 04-Mar-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS435DNT Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 81 °C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63264. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 63264 S13-0465-Rev. A, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 1212-8T MILLIMETERS INCHES DIM. MIN. NOM. MAX. MIN. NOM. A 0.70 0.75 0.80 0.028 0.030 MAX. 0.031 A1 0.00 - 0.05 0.000 - 0.002 b 0.23 0.30 0.41 0.009 0.012 0.016 c 0.23 0.28 0.33 0.009 0.011 0.013 D 3.20 3.30 3.40 0.126 0.130 0.134 D1 2.95 3.05 3.15 0.116 0.120 0.124 D2 1.98 2.11 2.24 0.078 0.083 0.088 D3 0.48 - 0.89 0.019 - 0.035 D4 0.47 TYP. 0.0185 TYP. D5 2.3 TYP. 0.090 TYP. E 3.20 3.30 3.40 0.126 0.130 0.134 E1 2.95 3.05 3.15 0.116 0.120 0.124 E2 1.47 1.60 1.73 0.058 0.063 0.068 E3 1.75 1.85 1.98 0.069 0.073 0.078 0.34 TYP. E4 0.013 TYP. e 0.65 BSC 0.026 BSC K 0.86 TYP. 0.034 TYP. K1 0.35 - - 0.014 - - H 0.30 0.41 0.51 0.012 0.016 0.020 L 0.30 0.43 0.56 0.012 0.017 0.022 L1 0.06 0.13 0.20 0.002 0.005 0.008  0° - 12° 0° - 12° W 0.15 0.25 0.36 0.006 0.010 0.014 M 0.125 TYP. 0.005 TYP. ECN: T13-0056-Rev. A, 18-Feb-13 DWG: 6012 Revison: 18-Feb-13 1 Document Number: 62836 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for Thin PowerPAK® 1212-8T 1 2 3 4 0.039 (0.99) 0.068 (1.73) 0.026 (0.66) 0.088 (2.24) 0.094 (2.39) 0.010 (0.25) 0.016 (0.41) 0.152 (3.86) 0.025 (0.64) 0.056 (1.42) 0.030 (0.76) Revision: 07-Sep-2020 Document Number: 66832 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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