SIS439DNT-T1-GE3

SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PowerPAK® 1212-8S • TrenchFET® power MOSFET D D D 7 8 D 6 5 • Low thermal resistance PowerPAK® package with small size and low 0.75 mm profile • 100 % Rg and UIS tested 3. 3 m m 1 m 3m 3. Top View 3 4 S G Bottom View 2 S 1 S APPLICATIONS S • Load switch • Adaptor switch PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • Notebook PC -30 0.0110 0.0195 23 -50 e, f Single G P-Channel MOSFET D ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 1212-8S SiS439DNT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) c, d TJ, Tstg LIMIT -30 ± 20 -50 e -43.5 -14.7 a, b -11.7 a, b -90 -43.4 -3.2 a, b -25 31.25 52.1 3.3 3.8 a, b 2.4 a, b -50 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient a, g Maximum junction-to-case (drain) t  10 s Steady state SYMBOL RthJA RthJC TYPICAL 26 1.9 MAXIMUM 33 2.4 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board b. t = 10 s c. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components e. Package limited f. Based on TC = 25 °C g. Maximum under steady state conditions is 81 °C/W S17-1451-Rev. B, 18-Sep-17 Document Number: 62869 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS439DNT www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS= 0 V, ID = -250 μA -30 - - V - -22 - - 5 - Static Drain-source breakdown voltage VDS/TJ VDS temperature coefficient VGS(th) temperature coefficient VGS(th)/TJ Gate-source threshold voltage ID = -250 μA mV/°C VGS(th) VDS = VGS, ID = -250 μA -1.2 - -2.8 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a VDS = -30 V, VGS = 0 V - - -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C - - -10 VDS  -5 V,VGS = -10 V -20 - - A  VGS = -10 V, ID = -14 A - 0.0091 0.0110 VGS = -4.5 V, ID = -11 A - 0.0156 0.0195 VDS = -15 V, ID = -14 A - 37 - - 2135 - - 395 - - 335 - VDS = 15 V, VGS = 10 V, ID = -14.4 A - 45 68 - 23 35 VDS = -15 V, VGS = -4.5 V, ID = -14.4 A - 7.2 - - 10.4 - f = 1 MHz 0.4 1.8 3.6 - 38 60 - 33 50 - 27 41 tf - 12 20 td(on) - 14 21 - 5 10 - 36 54 - 6 12 RDS(on) gfs μA S Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = -15 V, VGS = 0 V, f = 1 MHz td(on) VDD = -15 V, RL = 1.5  ID  -10 A, VGEN = -4.5 V, Rg = 1  tr td(off) VDD = -15 V, RL = 1.5  ID  -10 A, VGEN = -10 V, Rg = 1  tr td(off) tf pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (t = 100 μs) ISM Body diode voltage VSD TC = 25 °C IF = -10 A - - -50 - - -90 - -0.8 -1.2 A V Body diode reverse recovery time trr - 22 35 ns Body diode reverse recovery charge Qrr - 15 25 nC Reverse recovery fall time ta - 13 - Reverse recovery rise time tb - 9 - IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing      Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1451-Rev. B, 18-Sep-17 Document Number: 62869 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS439DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 2 VGS = 10 V thru 5 V VGS = 4.5 V VGS = 4 V 1.5 ID - Drain Current (A) ID - Drain Current (A) 45 30 15 TC = 25 °C 1 0.5 TC = 125 °C VGS = 3 V TC = -55 °C 0 0 0 0.5 1 1.5 VDS - Drain-to-Source Voltage (V) 2 0 0.7 1.4 2.1 2.8 3.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Output Characteristics 3300 2640 0.02 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.025 VGS = 4.5 V 0.015 VGS = 10 V 0.01 Ciss 1980 1320 660 0.005 Coss Crss 0 0 0 15 30 45 0 60 6 18 24 30 Capacitance On-Resistance vs. Drain Current and Gate Voltage 1.6 10 ID = 14 A RDS(on) - On-Resistance (Normalized) VDS = 8 V ID = 14.7 A VGS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 8 VDS = 15 V 6 4 VDS = 24 V 2 VGS = 10 V 1.4 VGS = 4.5 V 1.2 1 0.8 0.6 0 0 10 20 30 40 Qg - Total Gate Charge (nC) Gate Charge S17-1451-Rev. B, 18-Sep-17 50 -50 -25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 On-Resistance vs. Junction Temperature Document Number: 62869 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS439DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.040 100 RDS(on) - On-Resistance (Ω) ID = 14 A IS - Source Current (A) 0.030 TJ = 150 °C 10 0.020 TJ = 25 °C 1 TJ = 125 °C 0.010 TJ = 25 °C 0.1 0.000 0.0 0.3 0.6 0.9 VSD - Source-to-Drain Voltage (V) 1.2 2 Source-Drain Diode Forward Voltage 2.2 10 On-Resistance vs. Gate-to-Source Voltage 50 ID = 250 μA 1.98 40 Power (W) 1.76 VGS(th) (V) 4 6 8 VGS - Gate-to-Source Voltage (V) 1.54 1.32 30 20 10 1.1 -50 -25 0 25 50 75 100 125 0 0.01 150 0.1 1.0 10 100 1000 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 100 Limited by RDS(on) (1) ID - Drain Current (A) 100 μs 10 1 ms 10 ms 1 100 ms 10 s, 1 s 0.1 DC 0.01 TA = 25 °C Single pulse BVDSS limited 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) (1) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S17-1451-Rev. B, 18-Sep-17 Document Number: 62869 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS439DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 60 ID - Drain Current (A) 45 Package limited 30 15 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 64 2.0 48 1.5 Power (W) Power (W) Current Derating a 32 16 1.0 0.5 0 0.0 0 25 50 75 100 TC - Case Temperature (°C) Power, Junction-to-Case 125 150 0 25 50 75 100 TA - Ambient Temperature (°C) 125 150 Power, Junction-to-Ambient Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S17-1451-Rev. B, 18-Sep-17 Document Number: 62869 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiS439DNT www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 50 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 0.01 10 -4 10 -3 10 -2 4. Surface mounted 10 -1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                       Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62869. S17-1451-Rev. B, 18-Sep-17 Document Number: 62869 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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