SiS612EDNT
www.vishay.com
Vishay Siliconix
N-Channel 20 V (D-S) MOSFET
FEATURES
PowerPAK® 1212-8S
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Low thermal resistance PowerPAK package
with small size and 0.75 mm profile
• Typical ESD performance 3400 V
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
D
D
D 7 8
D 6
5
3.
3
m
m
1
3.3
mm
Top View
4
G
Bottom View
3
S
2
S
1
S
APPLICATIONS
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 4.5 V
RDS(on) max. () at VGS = 3.7 V
RDS(on) max. () at VGS = 2.5 V
Qg typ. (nC)
ID (A)
Configuration
D
• Battery switch / load switch
• Power management for tablet PCs
and mobile computing
20
0.0039
0.0042
0.0058
22.5
50 f, g
Single
G
N-Channel MOSFET
S
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK 1212-8S
SiS612EDNT-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
SYMBOL
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous drain current (TJ = 150 °C)
Pulsed drain current (t = 100 μs)
LIMIT
20
± 12
50 g
50 g
24.6 a, b
19.7 a, b
200
43.3
3.1 a, b
20
20
52
33
3.7 a, b
2.4 a, b
-55 to +150
260
ID
IDM
Continuous source-drain diode current
TC = 25 °C
TA = 25 °C
IS
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
TC = 70 °C
Maximum power dissipation
TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c, d
PD
TJ, Tstg
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient a, e
Maximum junction-to-case (drain)
t 10 s
Steady state
SYMBOL
RthJA
RthJC
TYPICAL
24
1.9
MAXIMUM
33
2.4
UNIT
°C/W
Notes
a. Surface mounted on 1" x 1" FR4 board
b. t = 10 s
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
e. Maximum under steady state conditions is 81 °C/W
f. Based on TC = 25 °C
g. Package limited
S17-1453-Rev. B, 18-Sep-17
Document Number: 62874
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS612EDNT
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 μA
20
-
-
-
V
18
-
-
-3.5
-
Static
Drain-source breakdown voltage
VDS temperature coefficient
VDS/TJ
VGS(th) temperature coefficient
VGS(th)/TJ
Gate-source threshold voltage
VGS(th)
Gate-source leakage
IGSS
Zero gate voltage drain current
IDSS
On-state drain current a
ID(on)
Drain-source on-state resistance a
Forward transconductance a
Dynamic
RDS(on)
gfs
ID = 250 μA
VDS = VGS, ID = 1 mA
0.5
-
1.2
VDS = 0 V, VGS = ± 12 V
-
-
± 10
VDS = 0 V, VGS = ± 4.5 V
-
-
±1
VDS = 20 V, VGS = 0 V
-
-
1
10
VDS = 20 V, VGS = 0 V, TJ = 55 °C
-
-
VDS 5 V, VGS = 10 V
20
-
-
VGS = 4.5 V, ID = 14 A
-
0.0032
0.0039
VGS = 3.7 V, ID = 14 A
-
0.0035
0.0042
VGS = 2.5 V, ID = 13 A
-
0.0041
0.0058
VDS = 10 V, ID = 14 A
-
50
-
-
2060
-
-
558
-
-
365
-
-
46
70
-
22.5
34
-
4.1
-
-
5.3
-
mV/°C
V
μA
A
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Rg
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 20 A
VDS = 10 V, VGS = 4.5 V, ID = 20 A
f = 1 MHz
0.2
1
2
-
16
24
-
65
98
-
40
60
tf
-
12
20
td(on)
-
9
18
-
5
10
-
34
51
-
4
8
td(on)
tr
td(off)
tr
td(off)
VDD = 10 V, RL = 1
ID 10 A, VGEN = 4.5 V, Rg = 1
VDD = 10 V, RL = 1
ID 10 A, VGEN = 10 V, Rg = 1
tf
pF
nC
ns
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
IS
Pulse diode forward current (t = 100 μs)
ISM
Body diode voltage
VSD
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
TC = 25 °C
IS = 10 A, VGS = 0 V
IF = 10 A, di/dt = 100 A/μs, TJ = 25 °C
-
-
50
-
-
200
-
0.75
1.2
V
-
22
44
ns
-
10
20
nC
-
11
-
-
11
-
A
ns
Notes
a. Pulse test: pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1453-Rev. B, 18-Sep-17
Document Number: 62874
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS612EDNT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.050
1.E-03
TJ = 25 °C
1.E-04
IGSS - Gate Current (A)
IGSS - Gate Current (mA)
0.040
0.030
0.020
0.010
1.E-05
TJ = 150 °C
1.E-06
1.E-07
TJ = 25 °C
1.E-08
1.E-09
0.000
0
6
12
18
24
VGS - Gate-Source Voltage (V)
30
0
5
10
15
VGS - Gate-to-Source Voltage (V)
20
Gate Current vs. Gate-to-Source Voltage
Gate Current vs. Gate-to-Source Voltage
2
50
VGS = 5 V thru 2 V
40
ID - Drain Current (A)
ID - Drain Current (A)
1.5
30
VGS = 1.5 V
20
TC = 25 °C
1
0.5
TC = 125 °C
10
TC = -55 °C
0
0
0
0.5
1
1.5
VDS - Drain-to-Source Voltage (V)
2
0
0.3
0.6
0.9
1.2
VGS - Gate-to-Source Voltage (V)
1.5
Transfer Characteristics
Output Characteristics
0.005
3000
Ciss
VGS = 2.5 V
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
2400
0.004
VGS = 3.7 V
0.003
VGS = 4.5 V
0.002
1800
1200
Coss
600
Crss
0.001
0
0
10
20
30
ID - Drain Current (A)
40
50
On-Resistance vs. Drain Current and Gate Voltage
S17-1453-Rev. B, 18-Sep-17
0
5
10
15
VDS - Drain-to-Source Voltage (V)
20
Capacitance
Document Number: 62874
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS612EDNT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.9
10
RDS(on) - On-Resistance (Normalized)
VGS - Gate-to-Source Voltage (V)
ID = 14 A
VDS = 5 V
ID = 20 A
8
VDS = 10 V
6
4
VDS = 16 V
2
VGS = 4.5 V, 3.7 V, 2.5 V
1.6
1.3
1
0.7
0
0
10
20
30
40
Qg - Total Gate Charge (nC)
-50
50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Gate Charge
100
0.012
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
ID = 20 A
TJ = 150 °C
10
TJ = 25 °C
1
0.009
TJ = 125 °C
0.006
TJ = 25 °C
0.003
0.000
0.1
0.0
0.3
0.6
0.9
0
1.2
2
4
6
8
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Source-Drain Diode Forward Voltage
1
50
ID = 250 μA
40
Power (W)
0.8
VGS(th) (V)
10
0.6
30
20
0.4
10
0.2
-50
-25
0
25
50
75
100
TJ - Temperature (°C)
Threshold Voltage
S17-1453-Rev. B, 18-Sep-17
125
150
0
0.01
0.1
1
10
100
600
Time (s)
Single Pulse Power, Junction-to-Ambient
Document Number: 62874
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS612EDNT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
Limited by RDS(on) (1)
100
ID - Drain Current (A)
100 μs
10
1 ms
10 ms
1
100 ms
10 s, 1 s
0.1
DC
TA = 25 °C
BVDSS limited
0.01
0.1
(1)
1
10
100
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
90
64
72
ID - Drain Current (A)
Power (W)
48
32
54
Package limited
36
16
18
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Power, Junction-to-Case
125
150
0
25
50
75
100
TC - Case Temperature (°C)
125
150
Current Derating a
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit
S17-1453-Rev. B, 18-Sep-17
Document Number: 62874
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiS612EDNT
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty cycle, D =
0.02
t1
t2
2. Per unit base = RthJA = 81 °C/W
3. T JM - TA = PDMZthJA(t)
Single pulse
0.01
10-4
4. Surface mounted
10-3
10-2
10-1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty cycle = 0.5
0.2
0.1
0.1
Single pulse
0.05
0.02
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62874.
S17-1453-Rev. B, 18-Sep-17
Document Number: 62874
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000