SQ3426EEV
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
0.042
RDS(on) () at VGS = 4.5 V
0.063
ID (A)
7
Configuration
(1, 2, 5, 6) D
S
4
D
5
(3) G
1
D
Top View
2
D
TrenchFET® power MOSFET
Typical ESD protection 800 V HBM
AEC-Q101 qualified
100 % Rg and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Single
TSOP-6 Single
D
6
•
•
•
•
60
3
G
(4) S
N-Channel MOSFET
Marking Code: 8Axxx
ORDERING INFORMATION
Package
TSOP-6
Lead (Pb)-free and Halogen-free
SQ3426EEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C
TC = 125 °C
Continuous Source Current (Diode Conduction)
Pulsed Drain
Current a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating Junction and Storage Temperature Range
ID
4
6
IDM
29
IAS
10
EAS
5
TJ, Tstg
V
7
IS
PD
UNIT
5
1.6
A
mJ
W
- 55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
110
RthJF
30
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mount b
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
S14-0226-Rev. E, 17-Feb-14
Document Number: 65351
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQ3426EEV
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
VDS
VGS = 0, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
-
2.5
VDS = 0 V, VGS = ± 12 V
-
-
± 500
nA
VDS = 0 V, VGS = ± 20 V
-
-
±1
mA
1
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V
VDS = 60 V
-
-
VGS = 0 V
VDS = 60 V, TJ = 125 °C
-
-
50
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
150
VGS = 10 V
VDS5 V
10
-
-
VGS = 10 V
ID = 5 A
-
0.035
0.042
VGS = 10 V
ID = 5 A, TJ = 125 °C
-
0.059
0.076
VGS = 10 V
ID = 5 A, TJ = 175 °C
-
0.074
0.095
VGS = 4.5 V
ID = 4 A
-
0.057
0.063
-
12
-
-
560
700
-
85
105
VDS = 15 V, ID = 4 A
V
μA
A
S
Dynamic b
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
55
70
Total Gate Charge c
Qg
-
7.6
12
-
2.1
-
-
4.1
-
f = 1 MHz
1.2
2.4
3.6
-
9
14
VDD = 30 V, RL = 7.5
ID 4 A, VGEN = 10 V, Rg = 1
-
12
18
-
19
29
tf
-
7
11
Pulsed Current a
ISM
-
-
29
A
Forward Voltage
VSD
-
0.75
1.2
V
Gate-Source
Charge c
Qgs
Gate-Drain Charge c
Qgd
Gate Resistance
Rg
Turn-On Delay
Time c
VDS = 30 V, f = 1 MHz
VGS = 4.5 V
VDS = 30 V, ID = 4 A
td(on)
Rise Time c
Turn-Off Delay Time c
VGS = 0 V
tr
td(off)
Fall Time c
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
IF = 1.6 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0226-Rev. E, 17-Feb-14
Document Number: 65351
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3426EEV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
15
15
VGS = 10 V thru 5 V
12
I D - Drain Current (A)
I D - Drain Current (A)
12
VGS = 4 V
9
6
9
6
TC = 25 °C
3
3
TC = 125 °C
VGS = 3 V
TC = - 55 °C
0
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
0
5
1
Output Characteristics
3
4
5
Transfer Characteristics
25
0.15
20
R DS(on) - On-Resistance (Ω)
g fs - Transconductance (S)
2
VGS - Gate-to-Source Voltage (V)
TC = - 55 °C
15
TC = 25 °C
10
TC = 125 °C
5
0
0.12
0.09
VGS = 4.5 V
0.06
VGS = 10 V
0.03
0.00
0
2
4
6
I D - Drain Current (A)
8
10
0
Transconductance
3
6
9
ID - Drain Current (A)
12
15
On-Resistance vs. Drain Current
10
1000
VGS - Gate-to-Source Voltage (V)
VDS = 30 V
ID = 4 A
C - Capacitance (pF)
800
Ciss
600
400
Coss
200
8
6
4
2
Crss
0
0
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
S14-0226-Rev. E, 17-Feb-14
50
60
0
4
8
12
16
20
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 65351
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For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3426EEV
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10-2
100
10
I S - Source Current (A)
I GSS - Gate Current (A)
10-4
TJ = 150 °C
10-6
TJ = 25 °C
10-8
TJ = 150 °C
1
TJ = 25 °C
0.1
0.01
10-10
0
6
12
18
24
0.001
0.0
30
0.2
Gate Current vs. Gate-Source Voltage
0.6
0.8
1.0
1.2
Source-Drain Diode Forward Voltage
0.6
2.1
ID = 3.2 A
0.3
1.8
VGS = 10 V
VGS(th) Variance (V)
R DS(on) - On-Resistance (Normalized)
0.4
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
1.5
1.2
0.0
- 0.3
ID = 5 mA
- 0.6
ID = 250 µA
0.9
- 0.9
0.6
- 50
- 25
0
25
50
75
100
125
150
175
- 1.2
- 50
- 25
0
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
25
50
75 100
TJ - Temperature (°C)
125
150
175
125
150
175
Threshold Voltage
80
0.20
VDS - Drain-to-Source Voltage (V)
R DS(on) - On-Resistance (Ω)
ID = 1 mA
0.16
0.12
TJ = 150 °C
0.08
0.04
TJ = 25 °C
0.00
0
1
2
3
4
5
6
7
8
9
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-Source Voltage
S14-0226-Rev. E, 17-Feb-14
10
76
72
68
64
60
- 50
- 25
0
25
50
75
100
TJ - Junction Temperature (°C)
Drain-Source Breakdown vs. Junction Temperature
Document Number: 65351
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3426EEV
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
IDM Limited
ID - Drain Current (A)
10
100 μs
Limited by RDS(on)*
1 ms
1
10 ms
100 ms
1 s,
10 s, DC
0.1
BVDSS Limited
TC = 25 °C
Single Pulse
0.01
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.05
PDM
0.1
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized thermal Transient Impedance, Junction-to-Ambient
S14-0226-Rev. E, 17-Feb-14
Document Number: 65351
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ3426EEV
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
Normalized thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65351.
S14-0226-Rev. E, 17-Feb-14
Document Number: 65351
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
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Document Number: 91000