SQJA42EP-T1_GE3

SQJA42EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Single • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D 6. 15 m m m 1 3 .1 m 5 Top View 3 S 4 G 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) 40 G RDS(on) () at VGS = 10 V 0.00940 RDS(on) () at VGS = 4.5 V 0.01173 ID (A) Configuration Package N-Channel MOSFET 20 Single S PowerPAK SO-8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 Continuous drain current a TC = 25 °C TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 20 IS 20 80 IAS 18 EAS 16 TJ, Tstg Soldering recommendations (peak temperature) d, e V 20 IDM PD UNIT 27 9 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) SYMBOL PCB mount c LIMIT RthJA 70 RthJC 5.5 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width  300 μs, duty cycle  2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S19-0024-Rev. B, 14-Jan-2019 Document Number: 76936 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA42EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.3 1.8 2.3 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 250 VGS = 10 V VDS  5 V 10 - - VGS = 10 V ID = 6 A - 0.00770 0.00940 VGS = 4.5 V ID = 4 A - 0.00970 0.01173 VGS = 10 V ID = 6 A, TJ = 125 °C - VGS = 10 V ID = 6 A, TJ = 175 °C VDS = 15 V, ID = 6 A - 0.01370 - - 0.01600 - 32 - V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 1 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 20  ID  1 A, VGEN = 10 V, Rg = 1  tf - 1197 1700 - 331 500 - 31 50 - 22 33 - 3.5 - pF nC - 3.9 - 1.74 3.49 5.30 - 10 20 - 4 10 - 24 50 - 25 50 - - 80 - 0.77 1.2 V - 28 60 ns - 17 35 nC - 14 -  ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr IF = 6 A, VGS = 0 Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 14 - IRM(REC) - -1.1 - Body diode peak reverse recovery current IF = 1 A, di/dt = 100 A/μs A ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0024-Rev. B, 14-Jan-2019 Document Number: 76936 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA42EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 80 75 10000 10000 VGS = 10 V thru 4 V VGS = 3 V 32 100 16 1000 45 1st line 2nd line 1000 48 2nd line ID - Drain Current (A) 60 1st line 2nd line 2nd line ID - Drain Current (A) 64 30 TC = 125 °C 100 TC = 25 °C 15 TC = -55 °C 0 0 10 2 4 6 8 10 10 0 VDS - Drain-to-Source Voltage (V) 2 4 Axis Title Axis Title 1000 60 TC = 125 °C 100 20 0 2nd line RDS(on) - On-Resistance (Ω) TC = -55 °C 1st line 2nd line 2nd line gfs - Transconductance (S) 0.030 10000 40 12 24 36 48 10000 0.024 1000 0.018 VGS = 4.5 V 0.012 100 0.006 VGS = 10 V 0.000 10 0 60 10 0 16 ID - Drain Current (A) 32 Axis Title Axis Title 100 100 Crss 10 10 32 VDS - Drain-to-Source Voltage (V) Capacitance S19-0024-Rev. B, 14-Jan-2019 40 10000 ID = 1 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 Coss 2nd line VGS - Gate-to-Source Voltage (V) 1000 1st line 2nd line 2nd line C - Capacitance (pF) Ciss 24 80 10 10000 16 64 On-Resistance vs. Drain Current 10 000 8 48 ID - Drain Current (A) Transconductance 0 10 Transfer Characteristics 100 TC = 25 °C 8 VGS - Gate-to-Source Voltage (V) Output Characteristics 80 6 1st line 2nd line 0 4 100 2 0 10 0 5 10 15 20 25 Qg - Total Gate Charge (nC) Gate Charge Document Number: 76936 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA42EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 ID = 6 A VGS = 10 V 1000 1.4 VGS = 4.5 V 1.1 100 0.8 0.5 2nd line IS - Source Current (A) 1.7 0 25 50 75 10 TJ = 150 °C 1 100 0.1 TJ = 25 °C 10 0 100 125 150 175 0.3 TJ - Junction Temperature (°C) 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Junction Temperature Axis Title Axis Title 0.050 0.5 10000 10000 0.2 0.020 TJ = 150 °C 100 0.010 1000 -0.1 1st line 2nd line 1000 0.030 2nd line VGS(th) - Variance (V) 0.040 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1000 0.01 10 -50 -25 10000 1st line 2nd line 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 ID = 5 mA -0.4 100 ID = 250 μA -0.7 TJ = 25 °C 0.000 -1.0 10 2 4 6 8 10 -50 -25 10 VGS - Gate-to-Source Voltage (V) 0 25 100 125 150 175 Threshold Voltage Axis Title Axis Title 56 100 10000 10000 IDM limited ID = 1 mA 1000 52 50 100 2nd line ID - Drain Current (A) 100 µs 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 75 TJ - Junction Temperature (°C) On-Resistance vs. Gate-to Source Voltage 54 50 10 1000 ID limited 1 ms 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on) a 1st line 2nd line 0 100 BVDSS limited 0.1 48 TC = 25 °C, single pulse 46 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 0.01 0.01 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S19-0024-Rev. B, 14-Jan-2019 Document Number: 76936 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA42EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 1 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 0.05 100 0.02 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 100 0.05 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions            Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76936. S19-0024-Rev. B, 14-Jan-2019 Document Number: 76936 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 θ 2.96 0° - 0.117 10° 0° - 10° ECN: C21-1498-Rev. C, 01-Nov-2021 DWG: 6044 Note • Millimeters will govern Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE 5.000 (0.197) 0.510 (0.020) 2.310 (0.091) 4.061 (0.160) 0.595 (0.023) 6.250 (0.246) 8.250 (0.325) 3.630 (0.143) 0.610 (0.024) 0.410 (0.016) 2.715 (0.107) 0.860 (0.034) 1.291 (0.051) 0.710 (0.028) 0.820 (0.032) 1.905 (0.075) 1.270 (0.050) 7.250 (0.285) Recommended Minimum Pads Dimensions in mm (inches) Revision: 07-Feb-12 1 Document Number: 63818 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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