SQJA46EP-T1_GE3

SQJA46EP www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Single • TrenchFET® power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D 6. 15 m m m 1 3 .1 m 5 Top View 3 S 4 G 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 40 ID (A) Configuration Package G 0.00300 60 N-Channel MOSFET Single PowerPAK SO-8L S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current a TC = 25 °C TC = 125 °C Continuous Source Current (Diode conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 60 60 IDM 150 IAS 45 EAS 101 TJ, Tstg Soldering Recommendations (Peak temperature) d, e V 60 IS PD UNIT 68 22 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB mount c SYMBOL LIMIT RthJA 68 RthJC 2.2 UNIT °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. S16-1488-Rev. A, 01-Aug-16 Document Number: 76495 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA46EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 Zero Gate Voltage Drain Current IDSS Gate-Source Threshold Voltage On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b ID(on) RDS(on) gfs VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 250 VGS = 10 V VDS5 V 30 - - VGS = 10 V ID = 10 A - VGS = 10 V ID = 10 A, TJ = 125 °C - - 0.00440 VGS = 10 V ID = 10 A, TJ = 175 °C - - 0.00520 - 67 - - 3850 5000 - 2300 3050 VDS = 15 V, ID = 10 A V nA μA A 0.00245 0.00300  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 70 100 Total Gate Charge c Qg - 67 105 - 19 - - 9 - f = 1 MHz 0.24 0.49 0.75 - 18 30 VDD = 20 V, RL = 4  ID  5 A, VGEN = 10 V, Rg = 1  - 5 10 - 30 50 - 15 25 Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 20 V, ID = 5 A td(on) tr td(off) tf pF nC  ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 15 A, VGS = 0 - - 150 A - 0.81 1.20 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1488-Rev. A, 01-Aug-16 Document Number: 76495 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA46EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 150 VGS = 10 V thru 5 V 10000 96 1st line 2nd line 60 100 30 1000 72 TC = 25 °C 48 100 24 VGS = 4 V TC = 125 °C 0 2 4 6 8 TC = -55 °C 0 10 0 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) 120 10 0 2 4 8 10 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title Axis Title 0.010 7500 10000 10000 6000 1000 0.006 0.004 100 VGS = 10 V 0.002 2nd line C - Capacitance (pF) 0.008 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) 10 6 1000 4500 Ciss 3000 1st line 2nd line 2nd line ID - Drain Current (A) 120 10000 Coss 100 1500 Crss 0.000 0 10 0 20 40 60 80 10 0 100 10 20 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance 4 100 2 0 10 16 32 48 64 80 10000 ID = 10 A VGS = 10 V 1.7 1000 1.4 1st line 2nd line 1000 6 2nd line RDS(on) - On-Resistance (Normalized) ID = 5 A VDS = 20 V 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 2.0 10000 0 40 Axis Title Axis Title 10 8 30 1.1 100 0.8 0.5 10 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-1488-Rev. A, 01-Aug-16 Document Number: 76495 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA46EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2nd line RDS(on) - On-Resistance (Ω) 10 TJ = 150 °C 1000 1 1st line 2nd line 2nd line IS - Source Current (A) 0.015 10000 TJ = 25 °C 0.1 100 0.01 10000 0.012 1000 0.009 1st line 2nd line 100 0.006 100 TJ = 150 °C 0.003 TJ = 25 °C 0.001 0.000 10 0 0.2 0.4 0.6 0.8 1.0 10 0 1.2 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source Drain Diode Forward Voltage On-Resistance vs. Gate-to Source Voltage Axis Title Axis Title 0.5 200 10000 10000 TC = -55 °C ID = 5 mA -0.7 100 -1.1 ID = 250 μA -1.5 160 1000 120 TC = 125 °C 80 100 40 0 10 -50 -25 0 25 50 TC = 25 °C 1st line 2nd line 2nd line gfs - Transconductance (S) 1000 -0.3 1st line 2nd line 2nd line VGS(th) Variance (V) 0.1 10 0 75 100 125 150 175 10 20 30 TJ - Temperature (°C) 2nd line ID - Drain Current (A) 2nd line Threshold Voltage Transconductance 40 50 Axis Title 10000 ID = 1 mA 51 1000 47 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 55 43 100 39 35 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S16-1488-Rev. A, 01-Aug-16 Document Number: 76495 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA46EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title 1000 10000 IDM limited 100 µs 1000 1 ms ID limited 10 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on) 1st line 2nd line 2nd line ID - Drain Current (A) 100 (1) 100 0.1 TC = 25 °C Single pulse 0.01 0.01 (1) 0.1 BVDSS limited 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 68 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S16-1488-Rev. A, 01-Aug-16 Document Number: 76495 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJA46EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76495. S16-1488-Rev. A, 01-Aug-16 Document Number: 76495 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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