SQM100N02-3M5L_GE3

SQM100N02-3m5L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® power MOSFET 20 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0045 ID (A) • Package with low thermal resistance • 100 % Rg and UIS tested • AEC-Q101 qualified 100 Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Single Package TO-263 TO-263 D G S D Top View G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 100 80 IS 100 IDM 220 IAS 45 EAS 101 PD UNIT 150 50 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 1 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). S16-1690-Rev. A, 29-Aug-16 Document Number: 76456 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM100N02-3m5L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 20 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IDSS ID(on) RDS(on) gfs V nA VGS = 0 V VDS = 20 V - - 1 VGS = 0 V VDS = 20 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 20 V, TJ = 175 °C - - 250 μA VGS = 10 V VDS  5 V 50 - - A VGS = 10 V ID = 30 A - 0.0020 0.0035 VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0050 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0058 VGS = 4.5 V ID = 20 A - 0.0030 0.0045 - 186 - VDS = 15 V, ID = 30 A μA  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Gate-Source Charge c Gate-Drain Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VDS = 10 V, f = 1 MHz Qg Qgs VGS = 10 V VDS = 10 V, ID = 50 A Qgd Rg f = 1 MHz td(on) tr td(off) VDD = 10 V, RL = 0.2  ID  50 A, VGEN = 10 V, Rg = 1  tf - 4300 5500 - 1350 1700 - 585 800 - 70 110 - 21 - - 11 - 1.1 2.3 3.5 - 15 25 pF nC  - 5 10 - 38 60 - 15 25 - - 220 A - 0.86 1.5 V ns Source-Drain Diode Ratings and Characteristics b Pulsed Currenta ISM Forward Voltage VSD IF = 50 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  S16-1690-Rev. A, 29-Aug-16 Document Number: 76456 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM100N02-3m5L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 160 100 10000 10000 VGS = 10 V thru 4 V 64 100 VGS = 3 V 32 1000 60 1st line 2nd line 1000 96 2nd line ID - Drain Current (A) 80 1st line 2nd line 2nd line ID - Drain Current (A) 128 TC = 125 °C 40 TC = 25 °C 100 20 TC = -55 °C 0 0 10 0 2 4 6 8 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 300 0.010 10000 10000 1000 180 TC = 125 °C 120 100 60 0.008 1000 0.006 0.004 1st line 2nd line TC = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 240 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C VGS = 4.5 V 100 0.002 VGS = 10 V 0 0.000 10 0 12 24 36 48 60 10 0 20 Transconductance On-Resistance vs. Drain Current Axis Title 2800 100 Coss Crss 0 10 8 12 16 20 10000 ID = 50 A VDS = 10 V 8 1000 6 1st line 2nd line 1st line 2nd line 2nd line C - Capacitance (pF) 1000 4200 2nd line VGS - Gate-to-Source Voltage (V) Ciss 5600 4 100 2 0 10 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) 2nd line Qg - Total Gate Charge (nC) 2nd line Capacitance Gate Charge S16-1690-Rev. A, 29-Aug-16 100 10 10000 4 80 ID - Drain Current (A) 2nd line Axis Title 0 60 ID - Drain Current (A) 2nd line 7000 1400 40 100 Document Number: 76456 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM100N02-3m5L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 ID = 30 A 10 1000 1.4 VGS = 10 V 1.1 100 0.8 0.5 0 25 50 TJ = 150 °C 0.1 100 0.01 0.001 10 -50 -25 75 100 125 150 175 10 0 0.2 0.4 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 2nd line On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage Axis Title Axis Title 0.6 10000 10000 0.2 0.01 100 TJ = 150 °C 0 2 4 8 100 ID = 250 μA -1.4 10 6 -0.6 -1.0 TJ = 25 °C 0.00 ID = 5 mA 10 10 -50 -25 0 25 50 75 100 125 150 175 VGS - Gate-to-Source Voltage (V) 2nd line TJ - Temperature (°C) 2nd line On-Resistance vs. Gate-to-Source Voltage Threshold Voltage Axis Title Axis Title 25 1000 10000 10000 IDM limited ID = 1 mA 100 μs 100 1000 1st line 2nd line 23 22 100 2nd line ID - Drain Current (A) 24 10 ms 100 ms, 1 s, 10 s, DC 1 Limited by RDS(on) (1) 0.1 21 1000 1 ms ID limited 10 1st line 2nd line 0.00 1000 -0.2 1st line 2nd line 1000 0.01 2nd line VGS(th) Variance (V) 0.02 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 0.6 TJ - Junction Temperature (°C) 2nd line 0.02 2nd line VDS - Drain-to-Source Voltage (V) 1000 TJ = 25 °C 1 1st line 2nd line VGS = 4.5 V 2nd line IS - Source Current (A) 1.7 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.0 100 TC = 25 °C Single pulse BVDSS limited 20 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature S16-1690-Rev. A, 29-Aug-16 0.01 0.01 (1) 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Document Number: 76456 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM100N02-3m5L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 Duty Cycle = 0.5 1000 0.2 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 0.1 0.1 0.05 100 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.              Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76456. S16-1690-Rev. A, 29-Aug-16 Document Number: 76456 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000