SQM110P06-8M9L_GE3

SQM110P06-8m9L www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET - 60 RDS(on) () at VGS = - 10 V 0.0089 RDS(on) () at VGS = - 4.5 V 0.0132 ID (A) - 110 Configuration Single TO-263 • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • AEC-Q101 Qualifiedd • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S G G D S D P-Channel MOSFET Top View ORDERING INFORMATION Package TO-263 Lead (Pb)-free and Halogen-free SQM110P06-8m9L-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 TC = 25 °C Continuous Drain Current Continuous Source Current (Diode TC = 125 °C Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V - 110 - 65 IS - 120 IDM - 230 IAS - 65 EAS 211 PD UNIT 230 76 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mountc RthJA 40 RthJC 0.65 °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S12-2482-Rev. A, 22-Oct-12 Document Number: 62784 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM110P06-8m9L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0 V, ID = - 250 μA - 60 - - VGS(th) VDS = VGS, ID = - 250 μA - 1.5 - 2.0 - 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = - 60 V - - -1 - - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = - 60 V, TJ = 125 °C VGS = 0 V VDS = - 60 V, TJ = 175 °C - - - 250 On-State Drain Currenta ID(on) VGS = - 10 V VDS- 5 V - 100 - - VGS = - 10 V ID = - 30 A - 0.0071 0.0089 VGS = - 10 V ID = - 30 A, TJ = 125 °C - - 0.0147 VGS = - 10 V ID = - 30 A, TJ = 175 °C - - 0.0189 VGS = - 4.5 V ID = - 20 A Drain-Source On-State Resistancea Forward Transconductanceb RDS(on) gfs VDS = - 15 V, ID = - 30 A - 0.0105 0.0132 - 71 - - 5953 7450 - 750 940 V nA μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 583 730 Total Gate Chargec Qg - 130 200 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec VGS = - 10 V VDS = - 25 V, f = 1 MHz VDS = - 30 V, ID = - 110 A f = 1 MHz td(on) tr Timec VGS = 0 V td(off) VDD = - 30 V, RL = 0.27  ID  - 110 A, VGEN = - 10 V, Rg = 1  tf pF - 25 - - 33 - nC 1.2 2.6 4 - 15 25 - 15 25 - 71 110 - 48 75 - - - 230 A - - 0.95 - 1.5 V  ns Source-Drain Diode Ratings and Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 85 A, VGS = 0 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2482-Rev. A, 22-Oct-12 Document Number: 62784 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM110P06-8m9L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 160 200 VGS = 10 V thru 5 V 128 ID - Drain Current (A) ID - Drain Current (A) 160 120 VGS = 4 V 80 96 TC = 25 °C 64 32 40 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 2 4 6 8 0 10 VDS - Drain-to-Source Voltage (V) 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.025 125 TC = - 55 °C 0.020 RDS(on) - On-Resistance (Ω) 100 gfs - Transconductance (S) 10 TC = 25 °C 75 TC = 125 °C 50 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 25 0.000 0 0 10 20 30 40 0 50 24 48 72 96 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 000 10 8000 8 120 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) ID = 110 A Ciss 6000 4000 2000 Coss 6 VDS = 30 V 4 2 Crss 0 0 0 10 20 30 40 50 60 0 30 60 90 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S12-2482-Rev. A, 22-Oct-12 120 150 Document Number: 62784 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM110P06-8m9L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 30 A VGS = 10 V 1.8 10 TJ = 150 °C IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.1 1.5 VGS = 4.5 V 1.2 1 0.1 TJ = 25 °C 0.01 0.9 0.6 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0.001 0.0 175 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 0.15 1.2 0.12 0.9 ID = 250 μA VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 0.2 0.09 0.06 0.03 TJ = 25 °C 0 2 4 6 ID = 5 mA 0.3 0.0 TJ = 150 °C 0.00 0.6 8 - 0.3 - 50 - 25 10 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 125 150 175 VDS - Drain-to-Source Voltage (V) - 60 ID = 1 mA - 63 - 66 - 69 - 72 - 75 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S12-2482-Rev. A, 22-Oct-12 Document Number: 62784 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM110P06-8m9L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 100 μs 1 ms 10 ms 100 ms, 1 s, 10 s, DC 10 1 0.1 0.01 0.01 Limited by RDS(on)* BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S12-2482-Rev. A, 22-Oct-12 Document Number: 62784 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQM110P06-8m9L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction to Ambient (25 °C) - Normalized Transient Thermal Impedance Junction to Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62784. S12-2482-Rev. A, 22-Oct-12 Document Number: 62784 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000