SQP120N06-3m5L
www.vishay.com
Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
TO-220AB
• TrenchFET® power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified d
• 100 % Rg and UIS tested
Top View
G
D
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
D
PRODUCT SUMMARY
VDS (V)
60
RDS(on) () at VGS = 10 V
0.0035
RDS(on) () at VGS = 4.5 V
0.0040
ID (A)
120
Configuration
Package
G
N-Channel MOSFET
Single
S
TO-220
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
60
Gate-source voltage
VGS
± 20
Continuous drain current
TC = 25 °C a
TC = 125 °C
Continuous source current (diode conduction) a
Pulsed drain current b
Single pulse avalanche current
Single pulse avalanche energy
Maximum power dissipation b
L = 0.1 mH
TC = 25 °C
TC = 125 °C
Operating junction and storage temperature range
ID
V
120
102
IS
120
IDM
480
IAS
100
EAS
500
PD
UNIT
250
83
A
mJ
W
TJ, Tstg
-55 to +175
°C
SYMBOL
LIMIT
UNIT
RthJA
40
RthJC
0.6
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount c
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR4 material).
d. Parametric verification ongoing.
S16-2643-Rev. A, 26-Dec-16
Document Number: 62854
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP120N06-3m5L
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
VDS
VGS = 0, ID = 250 μA
60
-
-
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
VDS = 0 V, VGS = ± 20 V
IGSS
-
-
± 100
VGS = 0 V
VDS = 60 V
-
-
1
-
-
50
Zero gate voltage drain current
IDSS
VGS = 0 V
VDS = 60 V, TJ = 125 °C
VGS = 0 V
VDS = 60 V, TJ = 175 °C
-
-
900
On-state drain current a
ID(on)
VGS = 10 V
VDS 5 V
120
-
-
VGS = 10 V
ID = 30 A
-
0.0025
0.0035
Drain-source on-state resistance a
Forward transconductance b
Dynamic
RDS(on)
gfs
VGS = 10 V
ID = 30 A, TJ = 125 °C
-
-
0.0064
VGS = 10 V
ID = 30 A, TJ = 175 °C
-
-
0.0080
VGS = 4.5 V
ID = 20 A
-
0.0028
0.0040
-
190
-
-
11 755
14 700
VDS = 15 V, ID = 30 A
V
nA
μA
A
S
b
Input capacitance
Ciss
VGS = 0 V
Output capacitance
Coss
-
1112
1400
Reverse transfer capacitance
Crss
-
481
605
Total gate charge c
Qg
-
220
330
Gate-source
charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
VDS = 25 V, f = 1 MHz
VGS = 10 V
VDS = 30 V, ID = 110 A
-
35
-
-
35
-
f = 1 MHz
0.6
1.3
2
-
19
29
VDD = 30 V, RL = 0.27
ID 110 A, VGEN = 10 V, Rg = 2.5
-
23
35
-
83
125
-
35
53
-
-
480
A
-
0.8
1.5
V
td(on)
tr
td(off)
tf
Source-Drain Diode Ratings and Characteristics
pF
nC
ns
b
Pulsed current a
ISM
Forward voltage
VSD
IF = 50 A, VGS = 0
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2643-Rev. A, 26-Dec-16
Document Number: 62854
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP120N06-3m5L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
165
150
VGS = 10 V thru 4 V
120
ID - Drain Current (A)
ID - Drain Current (A)
132
99
66
VGS = 3 V
33
90
TC = 25 °C
60
30
TC = 125 °C
0
TC = - 55 °C
0
0
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
0
2
4
6
8
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
10
0.010
400
TC = - 55 °C
0.008
TC = 25 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
320
240
TC = 125 °C
160
0.006
0.004
VGS = 4.5 V
0.002
80
VGS = 10 V
0.000
0
0
14
28
42
ID - Drain Current (A)
56
0
70
40
60
80
100
120
ID - Drain Current (A)
On-Resistance vs. Drain Current
Transconductance
10
12 000
VGS - Gate-to-Source Voltage (V)
10 000
C - Capacitance (pF)
20
Ciss
8000
6000
4000
2000
Coss
ID = 110 A
8
V DS = 30 V
6
4
2
Crss
0
0
0
10
20
30
40
VDS - Drain-to-Source Voltage (V)
Capacitance
S16-2643-Rev. A, 26-Dec-16
50
60
0
20
40
60
80
100 120 140 160 180 200
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 62854
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP120N06-3m5L
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
I D = 30 A
TJ = 150 °C
10
1.7
VGS = 4.5 V
1.3
0.9
1
TJ = 25 °C
0.1
0.01
0.5
- 50 - 25
0.001
0
25
50
75
100
125
150
0.0
175
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature
Source Drain Diode Forward Voltage
0.025
0.5
0.020
0.1
0.015
0.010
TJ = 150 °C
0.005
2
4
6
8
ID = 5 mA
- 0.7
ID = 250 μA
- 1.5
- 50 - 25
10
1.2
- 0.3
- 1.1
TJ = 25 °C
0.000
0
0.2
TJ - Junction Temperature (°C)
VGS(th) Variance (V)
RDS(on) - On-Resistance (Ω)
VGS = 10 V
2.1
IS - Source Current (A)
RDS(on) - On-Resistance (Normalized)
2.5
0
25
50
75
100
VGS - Gate-to-Source Voltage (V)
TJ - Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
125
150
175
VDS - Drain-to-Source Voltage (V)
80
76
ID = 10 mA
72
68
64
60
- 50 - 25
0
25
50
75
100
125
150
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S16-2643-Rev. A, 26-Dec-16
Document Number: 62854
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP120N06-3m5L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1000
ID - Drain Current (A)
100
100 μs
IDM Limited
1 ms
ID Limited
10
1
0.1
0.01
0.01
10 ms
100 ms, 1 s, 10 s, DC
Limited by RDS(on)*
BVDSS Limited
TC = 25 °C
Single Pulse
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S16-2643-Rev. A, 26-Dec-16
Document Number: 62854
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQP120N06-3m5L
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 5
10- 4
10- 3
10- 2
Square Wave Pulse Duration (s)
10- 1
1
3
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62854.
S16-2643-Rev. A, 26-Dec-16
Document Number: 62854
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
TO-220AB
MILLIMETERS
A
E
F
D
H(1)
Q
ØP
3
2
L(1)
1
M*
L
b(1)
INCHES
DIM.
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
b
0.69
1.01
0.027
0.040
b(1)
1.20
1.73
0.047
0.068
c
0.36
0.61
0.014
0.024
D
14.85
15.49
0.585
0.610
D2
12.19
12.70
0.480
0.500
E
10.04
10.51
0.395
0.414
e
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
F
1.14
1.40
0.045
0.055
H(1)
6.09
6.48
0.240
0.255
0.115
J(1)
2.41
2.92
0.095
L
13.35
14.02
0.526
0.552
L(1)
3.32
3.82
0.131
0.150
ØP
3.54
3.94
0.139
0.155
Q
2.60
3.00
0.102
0.118
ECN: T14-0413-Rev. P, 16-Jun-14
DWG: 5471
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
D2
Document Number: 71195
1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revison: 16-Jun-14
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000