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SQP120N06-3M5L_GE3

SQP120N06-3M5L_GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO-220-3

  • 描述:

    MOSFET N-CH 60V 120A TO220AB

  • 数据手册
  • 价格&库存
SQP120N06-3M5L_GE3 数据手册
SQP120N06-3m5L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES TO-220AB • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg and UIS tested Top View G D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.0035 RDS(on) () at VGS = 4.5 V 0.0040 ID (A) 120 Configuration Package G N-Channel MOSFET Single S TO-220 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 60 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C a TC = 125 °C Continuous source current (diode conduction) a Pulsed drain current b Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID V 120 102 IS 120 IDM 480 IAS 100 EAS 500 PD UNIT 250 83 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 40 RthJC 0.6 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount c °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. S16-2643-Rev. A, 26-Dec-16 Document Number: 62854 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-3m5L www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V IGSS - - ± 100 VGS = 0 V VDS = 60 V - - 1 - - 50 Zero gate voltage drain current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C VGS = 0 V VDS = 60 V, TJ = 175 °C - - 900 On-state drain current a ID(on) VGS = 10 V VDS  5 V 120 - - VGS = 10 V ID = 30 A - 0.0025 0.0035 Drain-source on-state resistance a Forward transconductance b Dynamic RDS(on) gfs VGS = 10 V ID = 30 A, TJ = 125 °C - - 0.0064 VGS = 10 V ID = 30 A, TJ = 175 °C - - 0.0080 VGS = 4.5 V ID = 20 A - 0.0028 0.0040 - 190 - - 11 755 14 700 VDS = 15 V, ID = 30 A V nA μA A  S b Input capacitance Ciss VGS = 0 V Output capacitance Coss - 1112 1400 Reverse transfer capacitance Crss - 481 605 Total gate charge c Qg - 220 330 Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg Turn-on delay time c Rise time c Turn-off delay time c Fall time c VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 110 A - 35 - - 35 - f = 1 MHz 0.6 1.3 2 - 19 29 VDD = 30 V, RL = 0.27  ID  110 A, VGEN = 10 V, Rg = 2.5  - 23 35 - 83 125 - 35 53 - - 480 A - 0.8 1.5 V td(on) tr td(off) tf Source-Drain Diode Ratings and Characteristics pF nC  ns b Pulsed current a ISM Forward voltage VSD IF = 50 A, VGS = 0 Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.     Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.  S16-2643-Rev. A, 26-Dec-16 Document Number: 62854 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-3m5L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 165 150 VGS = 10 V thru 4 V 120 ID - Drain Current (A) ID - Drain Current (A) 132 99 66 VGS = 3 V 33 90 TC = 25 °C 60 30 TC = 125 °C 0 TC = - 55 °C 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 0.010 400 TC = - 55 °C 0.008 TC = 25 °C RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 320 240 TC = 125 °C 160 0.006 0.004 VGS = 4.5 V 0.002 80 VGS = 10 V 0.000 0 0 14 28 42 ID - Drain Current (A) 56 0 70 40 60 80 100 120 ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 10 12 000 VGS - Gate-to-Source Voltage (V) 10 000 C - Capacitance (pF) 20 Ciss 8000 6000 4000 2000 Coss ID = 110 A 8 V DS = 30 V 6 4 2 Crss 0 0 0 10 20 30 40 VDS - Drain-to-Source Voltage (V) Capacitance S16-2643-Rev. A, 26-Dec-16 50 60 0 20 40 60 80 100 120 140 160 180 200 Qg - Total Gate Charge (nC) Gate Charge Document Number: 62854 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-3m5L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 I D = 30 A TJ = 150 °C 10 1.7 VGS = 4.5 V 1.3 0.9 1 TJ = 25 °C 0.1 0.01 0.5 - 50 - 25 0.001 0 25 50 75 100 125 150 0.0 175 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage 0.025 0.5 0.020 0.1 0.015 0.010 TJ = 150 °C 0.005 2 4 6 8 ID = 5 mA - 0.7 ID = 250 μA - 1.5 - 50 - 25 10 1.2 - 0.3 - 1.1 TJ = 25 °C 0.000 0 0.2 TJ - Junction Temperature (°C) VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) VGS = 10 V 2.1 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.5 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 125 150 175 VDS - Drain-to-Source Voltage (V) 80 76 ID = 10 mA 72 68 64 60 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S16-2643-Rev. A, 26-Dec-16 Document Number: 62854 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-3m5L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 ID - Drain Current (A) 100 100 μs IDM Limited 1 ms ID Limited 10 1 0.1 0.01 0.01 10 ms 100 ms, 1 s, 10 s, DC Limited by RDS(on)* BVDSS Limited TC = 25 °C Single Pulse 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance 1 0.1 0.01 0.001 0.0001 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S16-2643-Rev. A, 26-Dec-16 Document Number: 62854 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQP120N06-3m5L www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 5 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 3 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions.                                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62854. S16-2643-Rev. A, 26-Dec-16 Document Number: 62854 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220AB MILLIMETERS A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) INCHES DIM. MIN. MAX. MIN. MAX. A 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 D 14.85 15.49 0.585 0.610 D2 12.19 12.70 0.480 0.500 E 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.09 6.48 0.240 0.255 0.115 J(1) 2.41 2.92 0.095 L 13.35 14.02 0.526 0.552 L(1) 3.32 3.82 0.131 0.150 ØP 3.54 3.94 0.139 0.155 Q 2.60 3.00 0.102 0.118 ECN: T14-0413-Rev. P, 16-Jun-14 DWG: 5471 Note * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM C b e J(1) e(1) D2 Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 16-Jun-14 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000
SQP120N06-3M5L_GE3 价格&库存

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