SQW44N65EF-GE3

SQW44N65EF www.vishay.com Vishay Siliconix E Series Power MOSFET With Fast Body Diode FEATURES D • Fast body diode MOSFET using E series technology TO-247AD Available • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg G • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr G D S S • 175 °C operating temperature N-Channel MOSFET • AEC-Q101 qualified • Ultra low gate charge (Qg) PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 700 VGS = 10 V 0.063 Qg typ. (nC) 177 Qgs (nC) 46 APPLICATIONS 68 • Automotive onboard charger Single • Automotive DC/DC converter Qgd (nC) Configuration ORDERING INFORMATION Package TO-247AD Lead (Pb)-free and halogen-free SQW44N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 650 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C V 47 ID Pulsed drain current a UNIT 34 A IDM 146 3.3 W/°C Single pulse avalanche energy b EAS 596 mJ Maximum power dissipation PD 500 W TJ, Tstg -55 to +175 °C Linear derating factor Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C dv/dt Reverse diode dv/dt d Soldering recommendations (peak temperature) c for 10 s 100 50 260 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 6.5 A c. 1.6 mm from case d. ISD ≤ ID, di/dt = 145 A/μs, starting TJ = 25 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. Maximum junction-to-ambient RthJA - 40 Maximum junction-to-case (drain) RthJC - 0.3 S21-0365-Rev. A, 26-Apr-2021 MAX. UNIT °C/W Document Number: 92377 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW44N65EF www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance a VDS VGS = 0 V, ID = 250 μA 650 - - V ΔVDS/TJ Reference to 25 °C, ID = 10 mA - 0.7 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA μA IGSS IDSS VGS = ± 30 V - - ±1 VDS = 520 V, VGS = 0 V - - 1 VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 500 μA - 0.063 0.073 Ω gfs VDS = 30 V, ID = 22 A - 18 - S VGS = 0 V, VDS = 100 V, f = 1 MHz - 5858 - - 227 - - 6 - - 173 - RDS(on) VGS = 10 V ID = 22 A Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Effective output capacitance, energy related a Co(er) Effective output capacitance, time related b Co(tr) - 710 - Qg - 177 266 Total gate charge Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg VGS = 0 V, VDS = 0 V to 520 V VGS = 10 V ID = 22 A, VDS = 520 V - 46 - - 68 - - 47 94 VDD = 520 V, ID = 22 A Rg = 9.1 Ω, VGS = 10 V - 71 142 - 206 412 - 66 132 f = 1 MHz, open drain 0.5 1.0 2.0 - - 47 - - 146 pF nC ns Ω Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 22 A, VGS = 0 V TJ = 25 °C, IF = IS = 22 A, di/dt = 100 A/μs, VR = 400 V - 0.9 1.2 V - 190 380 ns - 1.7 3.4 μC - 17 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS b. Coss(tr) is a fixed capacitance that gives the charging time as Coss while VDS is rising from 0 % to 80 % VDS S21-0365-Rev. A, 26-Apr-2021 Document Number: 92377 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW44N65EF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 8V 1000 7V 60 100 30 6V 5V 0 0 5 10 3.0 2.5 1.5 100 1.0 VGS = 10 V 0.5 10 15 1000 2.0 1st line 90 10000 ID =22 A 10 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 20 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics Axis Title 15 V 14 V 13 V 12 V 11 V 10 V 8V TJ = 175 °C 10 000 1000 7V 6V 40 100 Ciss 1000 1000 100 Coss 10 Crss 1st line 2nd line 60 10000 100 000 2nd line C - Capacitance (pF) 80 Axis Title 10000 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 100 100 1 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 20 0.1 5V 10 0 0 5 10 15 10 0.01 20 0 100 200 300 400 500 600 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Axis Title Axis Title 200 40 10000 1000 100 100 50 TJ = 175 °C 2nd line Coss - Output Capacitance (pF) TJ = 25 °C 150 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 50 000 30 5 000 Coss Eoss 20 500 10 VDS = 20.8 V 10 0 0 5 10 15 20 50 0 0 100 200 300 400 500 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Coss and Eoss vs. VDS S21-0365-Rev. A, 26-Apr-2021 Eoss - Output Capacitance Stored Energy (μJ) 2nd line 120 9V RDS(on) - Drain-to-Source On-Resistance (Normalized) TJ = 25 °C 15 V 14 V 13 V 12 V 11 V 10 V 3.5 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 150 600 Document Number: 92377 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW44N65EF www.vishay.com Vishay Siliconix Axis Title Axis Title 10000 VDS = 520 V VDS = 325 V VDS = 130 V 40 6 100 3 1000 30 1st line 2nd line 1000 2nd line ID - Drain Current (A) 9 10000 50 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 12 20 100 10 0 50 100 150 10 0 10 0 200 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TC - Case Temperature (°C) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature Axis Title Axis Title 10 TJ = 25 °C 100 1 VGS = 0 V 10 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.1 1000 1 100 0.9 ID = 10 mA 10 0.8 1.6 -60 -40 -20 0 VSD - Source-Drain Voltage (V) 1st line 2nd line 1000 10000 1.2 (Normalized) TJ = 175 °C 2nd line Breakdown Voltage VDS - Drain-to-Source 100 1st line 2nd line 2nd line ISD - Reverse Drain Current (A) 10000 20 40 60 80 100120140160180 TJ - Junction Temperature (°C) Fig. 8 - Typical Source-Drain Diode Forward Voltage Fig. 11 - Typical Drain-to-Source Voltage vs. Temperature Axis Title 10000 1000 Operation in this area limited by RDS(on) IDM limited BVDSS limited 1000 Limited by RDS(on) a 10 100 μs 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 1 ms 100 0.1 10 ms TC = 25 °C, TJ = 175 °C, single pulse 0.01 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S21-0365-Rev. A, 26-Apr-2021 Document Number: 92377 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW44N65EF www.vishay.com Vishay Siliconix Axis Title 1 10000 0.2 1000 0.1 0.1 0.05 1st line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 Single pulse 0.02 100 10 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 16 - Unclamped Inductive Waveforms Fig. 13 - Switching Time Test Circuit VDS QG 10 V 90 % QGS QGD VG 10 % VGS td(on) td(off) tf tr Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L Vary tp to obtain required IAS VDS 50 kΩ 12 V D.U.T RG - IAS 0.3 µF V DD + D.U.T. 10 V tp + 0.2 µF 0.01 Ω - VDS VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S21-0365-Rev. A, 26-Apr-2021 Document Number: 92377 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW44N65EF www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92377. S21-0365-Rev. A, 26-Apr-2021 Document Number: 92377 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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