SQW61N65EF-GE3

SQW61N65EF www.vishay.com Vishay Siliconix Automotive E Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. at 25 °C () • Fast body diode MOSFET using Automotive Grade E series technology 700 VGS = 10 V Qg typ. (nC) 0.045 • Reduced trr, Qrr, and IRRM 229 Qgs (nC) 53 Qgd (nC) 91 Configuration • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr Single • 175 °C operating temperature • AEC-Q101 qualified D • Ultra low gate charge (Qg) TO-247AD • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 G APPLICATIONS G • Automotive onboard charger S D S • Automotive DC/DC converter N-Channel MOSFET ORDERING INFORMATION Package TO-247AD Lead (Pb)-Free and Halogen-Free SQW61N65EF-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 650 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 175 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Current a ID UNIT V 62 44 A IDM 187 4.2 W/°C Single Pulse Avalanche Energy b EAS 1323 mJ Maximum Power Dissipation PD 625 W TJ, Tstg -55 to +175 °C Linear Derating Factor Operating Junction and Storage Temperature Range Drain-Source Voltage Slope dV/dt Reverse Diode dV/dt d Soldering Recommendations (Peak temperature) c For 10 s 70 50 260 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 73.5 mH, Rg = 25 , IAS = 6 A c. 1.6 mm from case d. ISD  ID, di/dt = 470 A/μs, starting TJ = 25 °C S20-0874-Rev. A, 16-Nov-2020 Document Number: 92303 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW61N65EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT Maximum Junction-to-Ambient RthJA 40 Maximum Junction-to-Case (Drain) RthJC 0.24 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) VDS VGS = 0 V, ID = 250 μA 650 - - V VDS/TJ Reference to 25 °C, ID = 30 mA - 0.77 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 520 V, VGS = 0 V - - 1 μA VDS = 520 V, VGS = 0 V, TJ = 125 °C - - 500 μA - 0.045 0.052  S VGS = 10 V ID = 32 A gfs VDS = 30 V, ID = 32 A - 28 - Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 7379 - - 310 - - 4 - - 213 - - 841 - Dynamic Output Capacitance Coss Reverse Transfer Capacitance Crss Effective Output Capacitance, Energy Related a Co(er) Effective Output Capacitance, Time Related b Co(tr) pF VDS = 0 V to 520 V, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) - 65 98 tr VDD = 520 V, ID = 32 A, VGS = 10 V, Rg = 9.1  - 107 161 - 252 378 - 102 153 f = 1 MHz, open drain 0.5 1 2 - - 62 - - 187 Rise Time Turn-Off Delay Time td(off) Fall Time tf Gate Input Resistance Rg VGS = 10 V ID = 32 A, VDS = 520 V - 229 344 - 53 - - 91 - nC ns  Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr Reverse Recovery Current IRRM MOSFET symbol showing the  integral reverse p - n junction diode D A G TJ = 25 °C, IS = 32 A, VGS = 0 V TJ = 25 °C, IF = IS = 30.5 A, di/dt = 100 A/μs, VR = 400 V S - 0.9 1.2 V - 204 408 ns - 1.9 3.8 μC - 18 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS S20-0874-Rev. A, 16-Nov-2020 Document Number: 92303 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW61N65EF www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 1000 7V 100 100 50 6V 5V 5 10 15 1000 2.0 1.5 VGS = 10 V 100 1.0 0.5 20 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 VDS - Drain-to-Source Voltage (V) TJ - Junction Temperature (°C) Fig. 1 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Axis Title 15 V 14 V 13 V 12 V 11 V 10 V 9V 10 000 1000 7V 60 6V 100 30 10 15 1000 Coss 100 Crss 10 100 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 10 0.1 10 0 5 Ciss 1000 1 5V 0 10000 TJ = 175 °C 2nd line C - Capacitance (pF) 90 Axis Title 100 000 10000 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 120 1st line 2nd line 0 2.5 0 10 0 3.0 1st line 2nd line 8V ID = 32 A 20 0 100 200 300 400 500 600 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Axis Title Axis Title 200 40 10000 1000 100 100 TJ = 175 °C 50 2nd line Coss - Output Capacitance (pF) TJ = 25 °C 150 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 50 000 30 5000 Eoss Coss 20 500 10 VDS = 19.8 V 10 0 0 5 10 15 20 50 0 0 100 200 300 400 500 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 6 - Coss and Eoss vs. VDS S20-0874-Rev. A, 16-Nov-2020 Eoss - Output Capacitance Stored Energy (μJ) 2nd line 150 RDS(on) - Drain-to-Source On-Resistance (Normalized) TJ = 25 °C 15 V 14 V 13 V 12 V 11 V 10 V 9V 10000 3.5 10000 1st line 2nd line 2nd line ID - Drain-to-Source Current (A) 200 600 Document Number: 92303 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW61N65EF www.vishay.com Vishay Siliconix Axis Title Axis Title 80 10000 VDS = 520 V VDS = 325 V VDS = 130 V 6 100 3 60 1000 40 100 20 10 0 0 60 120 180 10000 1st line 2nd line 1000 2nd line ID - Drain Current (A) 9 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) 12 10 0 25 240 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TC - Case Temperature (°C) Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 10 - Maximum Drain Current vs. Case Temperature Axis Title 1000 10 TJ = 25 °C 100 1 VGS = 0 V 10 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-Drain Voltage (V) 1.2 10000 1.1 1000 1st line 2nd line TJ = 175 °C 1st line 2nd line 2nd line ISD - Reverse Drain Current (A) 100 2nd line VDS - Drain-to-Source Breakdown Voltage (Normalized) Axis Title 10000 1 100 0.9 ID = 30mA 0.8 10 -60 -40 -20 0 20 40 60 80 100120140160180 TJ - Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage Fig. 8 - Typical Source-Drain Diode Forward Voltage Axis Title 1000 10000 Operation in this area limited by RDS(on) IDM limited 1000 Limited by RDS(on) a 10 100 μs 1 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 10 ms 0.1 TC = 25 °C, TJ = 175 °C, single pulse BVDSS limited 0.01 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S20-0874-Rev. A, 16-Nov-2020 Document Number: 92303 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW61N65EF www.vishay.com Vishay Siliconix Axis Title 1 10000 0.2 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 0.1 0.05 100 Single pulse 0.02 10 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time (s) Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS VDD D.U.T. RG + - VDD VDS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS QG 10 V 90 % QGS 10 % VGS QGD VG td(on) td(off) tf tr Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform L Vary tp to obtain required IAS Current regulator Same type as D.U.T. VDS 50 kΩ D.U.T RG + - IAS 12 V 0.2 µF 0.3 µF V DD + D.U.T. - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S20-0874-Rev. A, 16-Nov-2020 Document Number: 92303 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQW61N65EF www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel           Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?92303. S20-0874-Rev. A, 16-Nov-2020 Document Number: 92303 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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