SUD50N025-06P-E3

SUD50N025-06P Vishay Siliconix New Product N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a, e 0.0062 at VGS = 10 V 78 0.010 at VGS = 4.5 V 62 VDS (V) 25 Qg (Typ) 20.5 nC • TrenchFET® Power MOSFET • 100 % Rg Tested • RoHS Compliant RoHS COMPLIANT APPLICATIONS • DC/DC Conversion, Low-Side - Desktop PC TO-252 D G Drain Connected to Tab G D S Top View S N-Channel MOSFET Ordering Information: SUD50N025-06P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C 65a, e ID 32b, c 25b, c TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Pulse Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C 43 IS 7.1b, c IAS 35 EAS 61.25 mJ 65a 45a PD W 10.7b, c 7.5b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A 100 TC = 25 °C Maximum Power Dissipation V 78a, e TC = 25 °C Continuous Drain Current (TJ = 175 °C) Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol b, d Maximum Junction-to-Ambient Maximum Junction-to-Case Typical Maximum t ≤ 10 sec RthJA 11 14 Steady State RthJC 1.9 2.3 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under Steady State conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 50 A. Document Number: 73349 S-Pending-Rev. B, 14-Mar-06 Work-In-Progress www.vishay.com 1 SUD50N025-06P Vishay Siliconix New Product SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = 250 µA 25 Typ Max Unit Static Drain-Source Breakdown Voltage ∆VDS/TJ VDS Temperature Coefficient V 20 ID = 250 µA mV/°C VGS(th) Temperature Coefficient ∆VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.4 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 25 V, VGS = 0 V 1 VDS = 25 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea Dynamic VDS ≥ 5 V, VGS = 10 V rDS(on) gfs - 5.5 1.4 50 µA A VGS = 10 V, ID = 20 A 0.0051 0.0062 VGS = 4.5 V, ID = 15 A 0.0081 0.010 VDS = 15 V, ID = 15 A 55 Ω S b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 2490 VDS = 12 V, VGS = 0 V, f = 1 MHz 280 VDS = 12 V, VGS = 10 V, ID = 50 A VDS = 12 V, VGS = 4.5 V, ID = 50 A VDD = 12 V, RL = 0.24 Ω ID ≅ 50 A, VGEN = 4.5 V, Rg = 1 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time 0.55 1.1 1.65 19 28 12 18 27 7 11 td(on) 9 14 11 16.5 VDD = 12 V, RL = 0.24 Ω ID ≅ 50 A, VGEN = 10 V, Rg = 1 Ω tf Fall Time 7.5 tf td(off) Turn-Off Delay Time 66 31 18 tr Rise Time 44 20.5 nC 7.0 f = 1 MHz td(on) Turn-On Delay Time pF 530 24 36 8 12 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current a TC = 25 °C IS Pulse Diode Forward Current ISM Body Diode Voltage VSD 43 100 IS = 30 A 0.9 1.5 A V Body Diode Reverse Recovery Time trr 30 45 ns Body Diode Reverse Recovery Charge Qrr 20 30 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 13.5 16.5 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Work-In-Progress Document Number: 73349 S-Pending-Rev. B, 14-Mar-06 SUD50N025-06P Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C unless noted 20 100 VGS = 10 thru 5 V 16 I D - Drain Current (A) I D - Drain Current (A) 80 4V 60 40 12 TC = 125 °C 8 4 20 2V 25 °C 3V - 55 °C 0 0.0 0.4 0.8 1.2 1.6 0 1.0 2.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.020 3200 2800 Ciss 0.016 C - Capacitance (pF) rDS(on) - On-Resistance (mΩ) 3.5 0.012 VGS = 4.5 V 0.008 VGS = 10 V 2400 2000 1600 1200 Coss 800 0.004 400 Crss 0.000 0 0 20 40 60 80 100 0 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 25 1.8 10 ID = 50 A 1.6 8 ID = 20 A VGS = 10 V rDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 5 VDS = 12 V 6 VDS = 18 V 4 2 1.4 VGS = 4.5 V 1.2 1.0 0.8 0 0 10 20 30 40 50 Qg - Total Gate Charge (nC) - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge Document Number: 73349 S-Pending-Rev. B, 14-Mar-06 0.6 - 50 On-Resistance vs. Junction Temperature Work-In-Progress www.vishay.com 3 SUD50N025-06P Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C unless noted 0.040 TJ = 150 °C 10 I S - Source Current (A) rDS(on) - Drain-to-Source On-Resistance (Ω) 100 1 0.1 TJ = 25 °C 0.01 ID = 20 A 0.035 0.030 0.025 0.020 0.015 TJ = 125 °C 0.010 0.005 TJ = 25 °C 0.000 0.001 0.00 0.2 0.4 0.6 0.8 1.0 2 1.2 3 VSD - Source-to-Drain Voltage (V) 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.6 720 0.3 600 ID = 250 µA 480 Power (W) VGS(th) (V) 0.0 - 0.3 TA = 25 °C 360 - 0.6 240 - 0.9 120 - 1.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 175 0.01 0.1 1 10 100 1000 Time (sec) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 1000 *Limited by rDS(on) 10 µs I D - Drain Current (A) 100 100 µs 10 1 ms 10 ms 100 ms, dc 1 TC = 25 °C Single Pulse 0.1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Work-In-Progress Document Number: 73349 S-Pending-Rev. B, 14-Mar-06 SUD50N025-06P Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C unless noted 70 90 60 75 Power ID - Drain Current (A) 50 60 45 Package Limited 30 40 30 20 15 10 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC - Case Temperature (°C) TC - Case Temperature (°C) Power Derating Current Derating* IC - Peak Avalanche Current (A) 1000 100 10 1 TA = L · ID BV - V DD 0.1 0.00001 0.0001 0.001 0.01 0.1 1 TA - Time In Avalanche (sec) Single Pulse Avalanche Capability *The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73349 S-Pending-Rev. B, 14-Mar-06 Work-In-Progress www.vishay.com 5 SUD50N025-06P Vishay Siliconix New Product TYPICAL CHARACTERISTICS 25 °C unless noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 70 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73349. www.vishay.com 6 Work-In-Progress Document Number: 73349 S-Pending-Rev. B, 14-Mar-06 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 H D D1 L3 b3 e b2 e1 L gage plane height (0.5 mm) L4 b L5 E1 C A1 MILLIMETERS DIM. MIN. A 2.18 MAX. 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 03-Oct-2022 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N E e A b3 E1 E1/2 c2 θ e L4 L5 L6 H D L3 D1 θ 0.25 (3°) DETAIL "B" C A B (3°) DETAIL "B" A1 C L (L1) b1 SEATING C PLANE θ L2 GAUGE PLANE H C (b) c1 3x b 2x e c 2x b2 MILLIMETERS MILLIMETERS DIM. A MIN. 2.18 MAX. DIM. MIN. 2.39 L 1.50 A1 - 0.13 L1 b 0.65 0.89 L2 MAX. 1.78 2.74 ref. 0.51 BSC b1 0.64 0.79 L3 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° 1 0° 15° 2 25° 35° c2 0.46 0.60 D 5.97 6.22 D1 5.21 - E 6.35 6.73 E1 4.32 e H 2.29 BSC 9.94 0.89 1.27 Notes • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees • Heat sink side flash is max. 0.8 mm • Radius on terminal is optional 10.34      ECN: E22-0399-Rev. R, 03-Oct-2022 DWG: 5347 Revision: 03-Oct-2022 Document Number: 71197 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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