SUM18N25-165-E3

SUM18N25-165 Vishay Siliconix N-Channel 250-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 250 0.165 at VGS = 10 V 18 • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package RoHS COMPLIANT D TO-263 G G D S Top View S Ordering Information: SUM18N25-165-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 250 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed Drain Current Single Pulse Avalanche Current a Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TA = 25 °Cc Operating Junction and Storage Temperature Range ID 20 IAS 5 PD V 18 10.4 IDM EAS Unit 1.25 150b 3.75 A mJ W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 1.0 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) PCB Mount (TO-263)c °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Document Number: 72849 S-80272-Rev. B, 11-Feb-08 www.vishay.com 1 SUM18N25-165 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VDS = 0 V, ID = 250 µA 250 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta IDSS Forward Transconductancea ± 100 VDS = 250 V, VGS = 0 V 1 VDS = 250 V, VGS = 0 V, TJ = 125 °C 50 VDS = 250 V, VGS = 0 V, TJ = 175 °C 250 VDS ≥ 15 V, VGS = 10 V ID(on) VGS = 10 V, ID = 14 A Drain-Source On-State Resistancea 4 rDS(on) gfs 20 nA µA A 0.130 0.165 VGS = 10 V, ID = 14 A, TJ = 125 °C 0.347 VGS = 10 V, ID = 14 A, TJ = 175 °C 0.462 VDS = 15 V, ID = 18 A V 36 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs c 1950 VGS = 0 V, VDS = 25 V, f = 1 MHz pF 160 70 30 VDS = 125 V, VGS = 10 V, ID = 18 A 45 nC 10 Gate-Drain Charge Qgd 10 Gate Resistance Rg 1.6 c td(on) 15 25 130 195 c td(off) 30 45 100 150 Turn-On Delay Time Rise Timec Turn-Off Delay Time tr Fall Timec VDD = 125 V, RL = 7.0 Ω ID ≅ 18 A, VGEN = 10 V, Rg = 2.5 Ω tf Ω ns Source-Drain Diode Ratings and Characteristics TC = 25 °Cb IS 18 Pulsed Current ISM 20 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Charge Reverse Recovery Charge IF = 18 A, VGS = 0 V trr IRM(REC) Qrr IF = 18 A, di/dt = 100 A/µs A 1.0 1.5 V 115 175 ns 10 15 A 0.58 1.3 µC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72849 S-80272-Rev. B, 11-Feb-08 SUM18N25-165 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 10 thru 6 V 16 16 I D - Drain Current (A) I D - Drain Current (A) 5V 12 8 4 12 8 TC = 125 °C 4 25 °C 4V - 55 °C 0 0 0 4 8 12 16 20 0 1 2 VDS - Drain-to-Source Voltage (V) 4 5 6 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 60 0.32 TC = - 55 °C 0.28 r DS(on) - On-Resistance (Ω) 50 g fs - Transconductance (S) 3 25 °C 40 125 °C 30 20 0.24 0.20 0.16 VGS = 10 V 0.12 0.08 10 0.04 0 0.00 0 4 8 12 16 20 0 8 12 16 20 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 20 2100 VGS - Gate-to-Source Voltage (V) 2800 C - Capacitance (pF) 4 Ciss 1400 700 Crss VDS = 125 V ID = 17 A 16 12 8 4 Coss 0 0 0 40 80 120 160 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 72849 S-80272-Rev. B, 11-Feb-08 200 0 8 16 24 32 40 48 56 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 SUM18N25-165 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.8 100 VGS = 10 V ID = 18 A I S - Source Current (A) rDS(on) - On-Resistance (Normalized) 2.4 2.0 1.6 1.2 TJ = 150 °C 10 TJ = 25 °C 0.8 0.4 - 50 1 - 25 0 25 50 75 100 125 150 175 0.3 0 TJ - Junction Temperature (°C) 0.9 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 100 325 310 V(BR)DSS (V) 10 I Dav (A) 0.6 IAV (A) at TA = 25 °C 1 ID = 10 mA 295 280 0.1 265 IAV (A) at TA = 150 °C 0.01 0.000001 www.vishay.com 4 0.00001 0.0001 0.001 0.01 0.1 250 - 50 - 25 0 25 50 75 100 125 tin (s) TJ - Junction Temperature (°C) Avalanche Current vs. Time Drain Source Breakdown vs. Junction Temperature 150 175 Document Number: 72849 S-80272-Rev. B, 11-Feb-08 SUM18N25-165 Vishay Siliconix THERMAL RATINGS 20 100 Limited by rDS(on)* 10 µs I D - Drain Current (A) I D - Drain Current (A) 16 12 8 10 100 µs 1 ms 1 10 ms TC = 25 °C Single Pulse 4 0 100 ms, DC 0.1 0 25 50 75 100 125 150 175 0.1 1 TC - Case Temperature (°C) * VGS Maximum Drain Current vs. Case Temperature 10 100 1000 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72849. Document Number: 72849 S-80272-Rev. B, 11-Feb-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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