SUM90N04-3M3P-E3

SUM90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () MAX. ID (A) d 0.0033 at VGS = 10 V 90 0.0041 at VGS = 4.5 V 90 Qg (TYP.) 87 • TrenchFET® Power MOSFET • 100 % Rg and UIS tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Power supply TO-263 D - Secondary synchronous rectification • DC/DC converter • Power tools G S S D Top View G N-Channel MOSFET Ordering Information:  SUM90N04-3m3P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C V 90 d ID 90 d A Pulsed Drain Current (t = 300 μs) IDM 160 Avalanche Current IAS 60 Single Avalanche Energy a Maximum Power Dissipation a Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 °C TA = 25 °C c UNIT EAS 180 mJ 125 b PD W 3.1 TJ, Tstg -55 to 150 °C SYMBOL LIMIT UNIT Junction-to-Ambient (PCB Mount) c RthJA 40 Junction-to-Case (Drain) RthJC 1 THERMAL RESISTANCE RATINGS PARAMETER °C/W Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. S13-2462-Rev. B, 02-Dec-13 Document Number: 63397 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N04-3m3P www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0 V, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1 - 2.5 IGSS VDS = 0 V, VGS = ± 20 V - - ± 250 VDS = 40 V, VGS = 0 V - - 1 VDS = 40 V, VGS = 0 V, TJ = 125 °C - - 50 VDS = 40 V, VGS = 0 V, TJ = 150 °C - - 250 VDS  10 V, VGS = 10 V 50 - - UNIT Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a IDSS ID(on) RDS(on) gfs V VGS = 10 V, ID = 22 A - 0.0027 0.0033 VGS = 4.5 V, ID = 20 A - 0.0034 0.0041 VDS = 15 V, ID = 20 A - 169 - - 5286 - - 705 - nA μA A  S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 283 - Qg - 87 131 Total Gate Charge c Gate-Source Charge c Qgs VGS = 0 V, VDS = 20 V, f = 1 MHz - 15.3 - - 12.2 - 0.5 2.7 5.4 - 11 20 - 7 14 - 45 68 - 7 14 IS - - 90 Pulsed Current ISM - - 160 Forward Voltage a VSD - 0.72 1.2 V - 42 63 ns - 2.5 3.8 A - 52 78 nC Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c Rise Time c Turn-Off Delay Time Fall Time c f = 1 MHz td(on) tr c VDS = 20 V, VGS = 10 V, ID = 20 A pF td(off) VDD = 20 V, RL = 2  ID  10 A, VGEN = 10 V, Rg = 1  tf nC  ns Drain-Source Body Diode Ratings and Characteristics (TC = 25 °C) b Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 10 A, VGS = 0 V trr IRM(REC) Qrr IF = 10 A, dI/dt = 100 A/μs Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2462-Rev. B, 02-Dec-13 Document Number: 63397 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N04-3m3P www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.0040 160 RDS(on) - On-Resistance (Ω) VGS = 10 V thru 3 V ID - Drain Current (A) 120 2V 80 40 0.0030 0.0020 0 VGS = 10 V 0.0025 VDS - Drain-to-Source Voltage (V) 40 60 ID - Drain Current (A) Output Characteristics On-Resistance vs. Drain Current 0.5 1.0 1.5 2.0 0 10 0.010 8 0.008 RDS(on) - On-Resistance (Ω) ID - Drain Current (A) 0 VGS = 4.5 V 0.0035 TC = 25 °C 6 4 2 20 80 100 0.006 TJ = 150 °C 0.004 TJ = 25 °C 0.002 TC = 125 °C TC = - 55 °C 0 0 0 0.6 1.2 1.8 2.4 3.0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage 450 10 ID = 24 A gfs - Transconductance (S) VGS - Gate-to-Source Voltage (V) TC = 25 °C 360 TC = - 55 °C 270 TC = 125 °C 180 90 0 0 16 32 48 64 80 8 VDS = 8 V 6 VDS = 15 V 4 VDS = 24 V 2 0 0 15 30 45 60 ID - Drain Current (A) Qg - Total Gate Charge Transconductance Gate Charge S13-2462-Rev. B, 02-Dec-13 75 90 Document Number: 63397 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N04-3m3P www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.2 100 VGS(th) (V) IS - Source Current (A) 1.7 10 TJ = 150 °C TJ = 25 °C ID = 250 μA 1.2 1 0.7 0.1 0.0 0.3 0.6 0.9 0.2 - 50 1.2 - 25 VSD - Source-to-Drain Voltage (V) 0 25 50 75 100 125 TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage 150 175 125 150 Threshold Voltage 8000 50 VDS - Drain-to-Source Voltage (V) ID = 250 μA C - Capacitance (pF) 6000 Ciss 4000 2000 Coss 48 46 44 42 Crss 0 0 10 20 30 40 - 50 40 - 25 Capacitance 25 50 75 100 Drain Source Breakdown vs. Junction Temperature 160 2.0 ID = 22 A VGS = 10 V 1.7 120 ID - Drain Current (A) RDS(on) - On-Resistance (Normalized) 0 TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) 1.4 VGS = 4.5 V 1.1 Package Limited 80 40 0.8 0.5 - 50 0 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature S13-2462-Rev. B, 02-Dec-13 175 0 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating Document Number: 63397 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N04-3m3P www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 Limited by RDS(on)* ID - Drain Current (A) IDAV (A) 100 TJ = 25 °C 10 TJ = 150 °C 100 μs 10 1 ms 10 ms 100 ms, 1 s 10 s, DC 1 0.1 TA = 25 °C Single Pulse 1 0.00001 0.0001 0.001 0.01 0.01 0.1 0.1 Time (s) Single Pulse Avalanche Current Capability vs. Time BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case  Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63397. S13-2462-Rev. B, 02-Dec-13 Document Number: 63397 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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