SUM90N08-7M6P-E3

SUM90N08-7m6P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 75 0.0076 at VGS = 10 V 90d 58 • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg and UIS Tested RoHS COMPLIANT APPLICATIONS • Power Supply - Secondary Synchronous Rectification • Industrial TO-263 D G G D S Top View S Ordering Information: SUM90N08-7m6P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Limit Drain-Source Voltage VDS 75 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current a L = 0.1 mH Single Avalanche Energy TC = 25 °C Maximum Power Dissipationa TA = 25 Operating Junction and Storage Temperature Range °Cc Unit V 90d 81 200 IAS 50 EAS 125 A mJ b PD 150 3.75 W TJ, Tstg - 55 to 175 °C Symbol Limit Unit RthJA 40 RthJC 1 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) c Junction-to-Case (Drain) °C/W Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 69578 S-80799-Rev. B, 14-Apr-08 www.vishay.com 1 SUM90N08-7m6P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = 250 µA 75 VGS(th) VDS = VGS, ID = 250 µA 2.8 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IDSS 4.8 ± 250 VDS = 75 V, VGS = 0 V 1 VDS = 75 V, VGS = 0 V, TJ = 125 °C 50 VDS = 75 V, VGS = 0 V, TJ = 150 °C 250 ID(on) RDS(on) VDS ≥ 10 V, VGS = 10 V 70 nA µA A VGS = 10 V, ID = 30 A 0.0063 0.0076 VGS = 10 V, ID = 30 A, TJ = 125 °C 0.0108 0.0130 VDS = 15 V, ID = 30 A 55 gfs V Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 178 Total Gate Chargec Qg 58 Gate-Source Chargec Gate-Drain Chargec VDS = 38 V, VGS = 10 V, ID = 15 A td(on) c td(off) tr Fall Timec pF 470 90 nC 21 16 Rg c Rise Timec Turn-Off Delay Time VGS = 0 V, VDS = 30 V, f = 1 MHz Qgd Gate Resistance Turn-On Delay Time Qgs 3528 f = 1 MHz VDD = 38 V, RL = 3.1 Ω ID ≅ 12.5 A, VGEN = 10 V, Rg = 1 Ω tf Source-Drain Diode Ratings and Characteristics TC = 25 °C 1.8 3.5 21 35 15 25 32 55 10 20 IS 83 ISM 200 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) Qrr ns b Pulsed Current Continuous Current Ω IF = 75 A, di/dt = 100 A/µs A 0.85 1.5 V 61 100 ns 2.7 4.5 A 83 140 nC Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69578 S-80799-Rev. B, 14-Apr-08 SUM90N08-7m6P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 200 200 VGS = 10 thru 8 V 180 160 160 7V I D - Drain Current (A) I D - Drain Current (A) 140 120 100 80 6V 60 40 120 80 TC = 125 °C 40 4V 20 0 0 0 1 2 3 4 5 6 7 8 9 10 0 1 2 VDS - Drain-to-Source Voltage (V) 3 4 5 6 7 9 10 Transfer Characteristics 90 0.20 ID = 30 A 70 RDS(on) - On-Resistance (Ω) TC = - 55 °C 80 25 °C 60 50 125 °C 40 30 20 0.15 TA = 25 °C 0.10 0.05 10 TA = 150 °C 0 0.00 0 10 20 30 40 50 4 60 5 I D - Drain Current (A) 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage vs. Temperature Transconductance 0.009 4500 4000 0.008 Ciss 3500 0.007 VGS = 10 V 0.006 C - Capacitance (pF) RDS(on) - D to S On-Resistance (Ω) 8 VGS - Gate-to-Source Voltage (V) Output Characteristics g fs - Transconductance (S) TC = - 55 °C TC = 25 °C 5V 3000 2500 2000 1500 1000 0.005 Coss 500 0.004 Crss 0 0 20 40 60 80 100 120 140 160 180 200 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 69578 S-80799-Rev. B, 14-Apr-08 0 10 20 30 40 50 60 70 80 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUM90N08-7m6P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 2.5 0.5 V GS(th) Variance (V) ID = 30 A, VGS = 10 V (Normalized) RDS(on) - On-Resistance 2.0 1.5 1.0 0.5 0.0 ID = 5 mA - 0.5 - 1.0 ID = 250 µA - 1.5 0.0 - 50 - 25 0 25 50 75 100 125 150 - 2.0 - 50 175 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Threshold Voltage 10 150 175 150 175 95 ID = 15 A VGS - Gate-to-Source Voltage (V) VDS = 38 V 8 V(BR)VDSS (normalized) 90 VDS = 60 V 6 4 2 80 75 0 0 10 20 30 40 50 70 - 50 60 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 120 100 I D - Drain Current (A) TJ = 150 °C 1.0 0.1 TJ = 25 °C 0.01 80 60 40 20 0.001 0 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage www.vishay.com 4 0 Gate Charge 10 0.0 - 25 Qg - Total Gate Charge (nC) 100 IS - Source Current (A) ID = 250 µA 85 1.0 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Maximum Drain Current vs. Case Temperature Document Number: 69578 S-80799-Rev. B, 14-Apr-08 SUM90N08-7m6P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 100 Limited by RDS(on)* I DAV (A) I D - Drain Current (A) 100 100 µs 10 1 ms 10 ms, 100 ms 1 s, 10 s, DC 1 TA = 25 °C Single Pulse 0.1 10 BVDSS 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t in (s) Single Pulse Avalanche Current Capability vs. Time * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69578. Document Number: 69578 S-80799-Rev. B, 14-Apr-08 www.vishay.com 5 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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