SUM90N03-2M2P-E3

SUM90N03-2m2P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 a, e RDS(on) () ID (A) 0.0022 at VGS = 10 V 90 0.0027 at VGS = 4.5 V 90 Qg (Typ.) 82 nC TO-263 • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D • OR-ing • Server G D G S Top View S Ordering Information: SUM90N03-2m2P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C 90e ID 33b, c Pulsed Drain Current IDM 200 Avalanche Current Pulse IAS 36 EAS 64.8 Single Pulse Avalanche Energy Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C 90 IS TC = 70 °C TA = 25 °C A 250a 175 PD W 3.75b, c 2.63b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range mJ a, e 3.13b, c TC = 25 °C Maximum Power Dissipation A 29.8b, c TA = 70 °C L = 0.1 mH V 90a, e TC = 25 °C Continuous Drain Current (TJ = 175 °C) Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case Symbol Typical Maximum t  10 s RthJA 32 40 Steady State RthJC 0.5 0.6 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 90 °C/W. e. Calculated based on maximum junction temperature. Package limitation current is 90 A. Document Number: 74342 S12-0680-Rev. C, 26-Mar-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N03-2m2P Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min . VDS VGS = 0 V, ID = 250 µA 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient V 35 ID = 250 µA mV/°C VGS(th) Temperature Coefficient VGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.5 V IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 Gate-Source Leakage Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs VDS 5 V, VGS = 10 V - 7.5 1.5 90 µA A VGS = 10 V, ID = 32 A 0.0018 0.0022 VGS = 4.5 V, ID = 29 A 0.0022 0.0027 VDS = 15 V, ID = 32 A 160  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg 12065 VDS = 15 V, VGS = 0 V, f = 1 MHz 970 VDS = 15 V, VGS = 10 V, ID = 32 A VDS = 15 V, VGS = 4.5 V, ID = 29 A tr Rise Time td(off) Turn-Off Delay Time Fall Time Turn-On Delay Time f = 1 MHz VDD = 15 V, RL = 0.555  ID  27 A, VGEN = 10 V, Rg = 1  123 34 1.4 2.1 18 27 11 17 105 10 15 td(on) 55 83 180 270 55 83 12 18 VDD = 15 V, RL = 0.625  ID  24 A, VGEN = 4.5 V, Rg = 1  tf Fall Time 81.5 70 td(off) Turn-Off Delay Time 257 tf tr Rise Time 171 nC 29 td(on) Turn-On Delay Time pF 1725  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C 90 200 IS = 22 A IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C A 0.8 1.2 V 52 78 ns 70.2 105 nC 27 25 ns Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For more information please contact: pmostechsupport@vishay.com Document Number: 74342 S12-0680-Rev. C, 26-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N03-2m2P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 90 VGS = 10 thru 4 V 2.4 ID - Drain Current (A) ID - Drain Current (A) 75 60 45 30 1.8 1.2 TC = 125 °C 0.6 15 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 V GS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics 4 Transfer Characteristics 0.0030 RDS(on) - Drain-to-Source On-Resistance (Ω) 600 TC = 25 °C 500 G fs - Transconductance (S) - 55 °C TC = 25 °C VGS = 3 V VGS = 2 V TC = 125 °C 400 300 TC = - 55 °C 200 100 0 0 10 20 30 40 50 60 70 80 90 0.0025 VGS = 4.5 V 0.0020 VGS = 10 V 0.0015 0.0010 0 15 30 45 60 75 90 150 180 ID - Drain Current (A) ID - Drain Current (A) Transconductance RDS(on) vs. Drain Current 10 15000 C - Capacitance (pF) 12000 V G S - Gate-to-Source Voltage (V) ID = 32 A Ciss 9000 6000 Coss 3000 Crss 0 0 8 VDS = 15 V 6 VDS = 24 V 4 2 0 6 12 18 24 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 74342 S12-0680-Rev. C, 26-Mar-12 30 0 30 60 90 120 Qg - Total Gate Charge (nC) Gate Charge For more information please contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N03-2m2P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 VGS = 10 V, ID = 32 A VGS = 4.5 V, ID = 29.8 A 10 1.4 IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 1.6 1.2 1.0 0.8 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.6 - 50 0.001 - 25 0 25 50 75 100 125 150 0 175 0.2 0.4 0.6 0.8 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 1 Forward Diode Voltage vs. Temperature 0.004 2.8 TA = 125 °C 2.4 0.003 ID = 250 µA VGS(th) (V) RDS(on) - On-Resistance (Ω) ID = 32 A 0.002 TA = 25 °C 2.0 1.6 0.001 1.2 0.000 0 2 4 6 8 10 0.8 - 50 - 25 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) RDS(on) vs. VGS vs. Temperature Threshold Voltage 125 150 175 1000 Limited by rDS(on)* I D - Drain Current (A) 100 100 µs 1 ms 10 10 ms 100 ms 1 1s 10 s DC 0.1 0.01 TA = 25 °C Single Pulse 0.001 0.1 *VGS BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 For more information please contact: pmostechsupport@vishay.com Document Number: 74342 S12-0680-Rev. C, 26-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N03-2m2P Vishay Siliconix 300 300 250 250 Power Dissipation (W) ID - Drain Current (A) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 200 150 Package Limited 100 200 150 100 50 50 0 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 175 * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74342 Document Number: 74342 S12-0680-Rev. C, 26-Mar-12 For more information please contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000