SUM90N06-4m4P
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET® Power MOSFET
VDS (V)
RDS(on) ()
ID (A)
Qg (Typ)
60
0.0044 at VGS = 10 V
90d
105
• 175 °C Junction Temperatur
RoHS
• 100 % Rg and UIS Tested
COMPLIANT
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TO-263
APPLICATIONS
• Power Supply
D
- Secondary Synchronous Rectification
• Industrial
D
G
• OR-ing
S
G
Top View
Ordering Information: SUM90N06-4m4P-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
IDM
Pulsed Drain Current
Avalanche Current
Single Avalanche Energya
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipationa
TA = 25 °Cc
Operating Junction and Storage Temperature Range
V
90d
90d
240
IAS
70
EAS
245
PD
Unit
300b
3.75
A
mJ
W
TJ, Tstg
- 55 to 175
°C
Unit
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Limit
Junction-to-Ambient (PCB Mount)c
RthJA
40
Junction-to-Case (Drain)
RthJC
0.5
°C/W
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
For technical questions, contact: pmostechsupport@vishay.com
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90N06-4m4P
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Min.
VDS
VDS = 0 V, ID = 250 µA
60
VGS(th)
VDS = VGS, ID = 250 µA
2.5
IGSS
VDS = 0 V, VGS = ± 20 V
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
IDSS
Zero Gate Voltage Drain Current
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
RDS(on)
gfs
4.5
± 250
VDS = 60 V, VGS = 0 V
1
VDS = 60 V, VGS = 0 V, TJ = 125 °C
50
VDS = 60 V, VGS = 0 V, TJ = 150 °C
250
VDS 10 V, VGS = 10 V
70
V
nA
µA
A
VGS = 10 V, ID = 20 A
0.0036
0.0044
VGS = 10 V, ID = 20 A, TJ = 125 °C
0.0059
0.0077
VDS = 15 V, ID = 20 A
60
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
340
Total Gate Chargec
Qg
105
Gate-Source
Chargec
Gate-Drain Chargec
VGS = 0 V, VDS = 30 V, f = 1 MHz
VDS = 30 V, VGS = 10 V, ID = 85 A
Qgd
c
td(on)
c
td(off)
Turn-On Delay Time
Rise Timec
tr
Fall Timec
pF
990
160
nC
29
28
Rg
Gate Resistance
Turn-Off Delay Time
Qgs
6190
f = 1 MHz
VDD = 30 V, RL = 0.4
ID 85 A, VGEN = 10 V, Rg = 1
tf
1.4
2.8
23
35
15
25
36
55
8
15
ns
b
Source-Drain Diode Ratings and Characteristics (TC = 25 °C)
IS
85
Pulsed Current
ISM
240
Forward Voltagea
VSD
Continuous Current
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
IF = 30 A, VGS = 0 V
trr
IRM(REC)
IF = 75 A, di/dt = 100 A/µs
Qrr
A
0.84
1.5
V
61
100
ns
3.0
4.5
A
91
140
µC
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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For technical questions, contact: pmostechsupport@vishay.com
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90N06-4m4P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
150
120
100
120
g fs - Transconductance (S)
I D - Drain Current (A)
TC = - 55 °C
VGS = 10 thru 7 V
80
60
6V
40
20
TC = 25 °C
90
TC = 125 °C
60
30
0
0
0
1
2
3
4
0
5
12
VDS - Drain-to-Source Voltage (V)
24
36
48
60
I D - Drain Current (A)
Output Characteristics
Transconductance
100
0.05
ID = 20 A
RDS(on) - On-Resistance (Ω)
I D - Drain Current (A)
80
60
40
TC = 125 °C
TC = 25 °C
20
0.04
0.03
0.02
TA = 150 °C
0.01
TC = - 55 °C
TA = 25 °C
0
0
0
2
4
6
8
4
10
5
8
9
10
On-Resistance vs. Gate-to-Source Voltage
0.0042
9000
0.0040
7200
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Transfer Characteristics
0.0038
6
VGS - Gate-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
VGS = 10 V
0.0036
Ciss
5400
3600
Coss
0.0034
1800
0.0032
Crss
0
0
20
40
60
80
ID - Drain Current (A)
100
0
12
36
48
60
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
24
For technical questions, contact: pmostechsupport@vishay.com
Capacitance
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90N06-4m4P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2.0
0.8
ID = 20 A
0.2
V GS(th) Variance (V)
VGS = 10 V
(Normalized)
RDS(on) - On-Resistance
1.7
1.4
1.1
0.8
- 0.4
ID = 5 mA
- 1.0
- 1.6
ID = 250 µA
0.5
- 50
- 25
0
25
50
75
100
125
150
- 2.2
- 50
175
- 25
0
25
On-Resistance vs. Junction Temperature
75
100
125
150
175
125
150
175
Threshold Voltage
10
74
ID = 85 A
72
ID = 1 mA
VDS = 30 V
8
70
VDS = 20 V
6
VDS (normalized)
VGS - Gate-to-Source Voltage (V)
50
TJ - Temperature (°C)
TJ - Junction Temperature (°C)
VDS = 40 V
4
68
66
64
62
2
60
0
0
22
44
66
88
58
- 50
110
- 25
0
Gate Charge
50
75
100
On-Resistance vs. Junction Temperature
185
100
10
148
TJ = 150 °C
I D - Drain Current (A)
I S - Source Current (A)
25
TJ - Junction Temperature (°C)
Qg - Total Gate Charge (nC)
TJ = 25 °C
1
0.1
0.01
111
Package Limited
74
37
0
0.001
0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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1.2
0
25
50
75
100
125
150
TC - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUM90N06-4m4P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1000
100
*Limited by r DS(on)
I D - Drain Current (A)
I DAV (A)
100
TJ = 25 °C
TJ = 150 °C
10
1 ms
10
10 ms
100 ms
DC
1
TC = 25 °C
Single Pulse
1
10-5
10-4
10-3
10-2
10-1
0.1
0.1
1
t AV (sec)
* VGS
Single Pulse Avalanche Current Capability vs. Time
1
10
100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?74642.
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Revision: 01-Jan-2022
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Document Number: 91000