SUM90N06-4M4P-E3

SUM90N06-4m4P Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () ID (A) Qg (Typ) 60 0.0044 at VGS = 10 V 90d 105 • 175 °C Junction Temperatur RoHS • 100 % Rg and UIS Tested COMPLIANT • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TO-263 APPLICATIONS • Power Supply D - Secondary Synchronous Rectification • Industrial D G • OR-ing S G Top View Ordering Information: SUM90N06-4m4P-E3 (Lead (Pb)-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 70 °C ID IDM Pulsed Drain Current Avalanche Current Single Avalanche Energya L = 0.1 mH TC = 25 °C Maximum Power Dissipationa TA = 25 °Cc Operating Junction and Storage Temperature Range V 90d 90d 240 IAS 70 EAS 245 PD Unit 300b 3.75 A mJ W TJ, Tstg - 55 to 175 °C Unit THERMAL RESISTANCE RATINGS Parameter Symbol Limit Junction-to-Ambient (PCB Mount)c RthJA 40 Junction-to-Case (Drain) RthJC 0.5 °C/W Notes: a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited. Document Number: 74642 S-71691-Rev. A, 13-Aug-07 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N06-4m4P Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VDS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 2.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs 4.5 ± 250 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 125 °C 50 VDS = 60 V, VGS = 0 V, TJ = 150 °C 250 VDS 10 V, VGS = 10 V 70 V nA µA A VGS = 10 V, ID = 20 A 0.0036 0.0044 VGS = 10 V, ID = 20 A, TJ = 125 °C 0.0059 0.0077 VDS = 15 V, ID = 20 A 60  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 340 Total Gate Chargec Qg 105 Gate-Source Chargec Gate-Drain Chargec VGS = 0 V, VDS = 30 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 85 A Qgd c td(on) c td(off) Turn-On Delay Time Rise Timec tr Fall Timec pF 990 160 nC 29 28 Rg Gate Resistance Turn-Off Delay Time Qgs 6190 f = 1 MHz VDD = 30 V, RL = 0.4  ID  85 A, VGEN = 10 V, Rg = 1  tf 1.4 2.8 23 35 15 25 36 55 8 15  ns b Source-Drain Diode Ratings and Characteristics (TC = 25 °C) IS 85 Pulsed Current ISM 240 Forward Voltagea VSD Continuous Current Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IF = 30 A, VGS = 0 V trr IRM(REC) IF = 75 A, di/dt = 100 A/µs Qrr A 0.84 1.5 V 61 100 ns 3.0 4.5 A 91 140 µC Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 74642 S-71691-Rev. A, 13-Aug-07 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N06-4m4P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 150 120 100 120 g fs - Transconductance (S) I D - Drain Current (A) TC = - 55 °C VGS = 10 thru 7 V 80 60 6V 40 20 TC = 25 °C 90 TC = 125 °C 60 30 0 0 0 1 2 3 4 0 5 12 VDS - Drain-to-Source Voltage (V) 24 36 48 60 I D - Drain Current (A) Output Characteristics Transconductance 100 0.05 ID = 20 A RDS(on) - On-Resistance (Ω) I D - Drain Current (A) 80 60 40 TC = 125 °C TC = 25 °C 20 0.04 0.03 0.02 TA = 150 °C 0.01 TC = - 55 °C TA = 25 °C 0 0 0 2 4 6 8 4 10 5 8 9 10 On-Resistance vs. Gate-to-Source Voltage 0.0042 9000 0.0040 7200 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) Transfer Characteristics 0.0038 6 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) VGS = 10 V 0.0036 Ciss 5400 3600 Coss 0.0034 1800 0.0032 Crss 0 0 20 40 60 80 ID - Drain Current (A) 100 0 12 36 48 60 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Document Number: 74642 S-71691-Rev. A, 13-Aug-07 24 For technical questions, contact: pmostechsupport@vishay.com Capacitance www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N06-4m4P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 0.8 ID = 20 A 0.2 V GS(th) Variance (V) VGS = 10 V (Normalized) RDS(on) - On-Resistance 1.7 1.4 1.1 0.8 - 0.4 ID = 5 mA - 1.0 - 1.6 ID = 250 µA 0.5 - 50 - 25 0 25 50 75 100 125 150 - 2.2 - 50 175 - 25 0 25 On-Resistance vs. Junction Temperature 75 100 125 150 175 125 150 175 Threshold Voltage 10 74 ID = 85 A 72 ID = 1 mA VDS = 30 V 8 70 VDS = 20 V 6 VDS (normalized) VGS - Gate-to-Source Voltage (V) 50 TJ - Temperature (°C) TJ - Junction Temperature (°C) VDS = 40 V 4 68 66 64 62 2 60 0 0 22 44 66 88 58 - 50 110 - 25 0 Gate Charge 50 75 100 On-Resistance vs. Junction Temperature 185 100 10 148 TJ = 150 °C I D - Drain Current (A) I S - Source Current (A) 25 TJ - Junction Temperature (°C) Qg - Total Gate Charge (nC) TJ = 25 °C 1 0.1 0.01 111 Package Limited 74 37 0 0.001 0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage www.vishay.com 4 1.2 0 25 50 75 100 125 150 TC - Case Temperature (°C) Maximum Drain Current vs. Case Temperature For technical questions, contact: pmostechsupport@vishay.com Document Number: 74642 S-71691-Rev. A, 13-Aug-07 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90N06-4m4P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1000 100 *Limited by r DS(on) I D - Drain Current (A) I DAV (A) 100 TJ = 25 °C TJ = 150 °C 10 1 ms 10 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 1 10-5 10-4 10-3 10-2 10-1 0.1 0.1 1 t AV (sec) * VGS Single Pulse Avalanche Current Capability vs. Time 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74642. Document Number: 74642 S-71691-Rev. A, 13-Aug-07 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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