SUM90220E-GE3

SUM90220E www.vishay.com Vishay Siliconix N-Channel 200 V (D-S) 175 °C MOSFET FEATURES TO-263 • ThunderFET® power MOSFET • Low RDS - Qg figure-of-merit (FOM) • Maximum 175 °C junction temperature • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S D Top View APPLICATIONS G D • Synchronous rectification • Power supplies PRODUCT SUMMARY VDS (V) • DC/AC inverter 200 RDS(on) max. () at VGS = 10 V 0.0216 RDS(on) max. () at VGS = 7.5 V 0.0235 Qg typ. (nC) G • Solar micro inverter • Motor drive switch 31.6 ID (A) Configuration • DC/DC converter S N-Channel MOSFET 64 Single ORDERING INFORMATION Package TO-263 Lead (Pb)-free and halogen-free SUM90220E-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 200 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Pulsed drain current (t = 100 μs) Continuous source-drain diode current Single pulse avalanche current a L = 0.1 mH Single pulse avalanche energy a Maximum power dissipation TC = 25 °C TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) ID 37 100 IS 64.7 IAS 45 EAS 101 TJ, Tstg c V 64 IDM PD UNIT 230 b 77 b -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient (PCB mount) c Maximum junction-to-case (drain) Steady state SYMBOL MAXIMUM RthJA 40 RthJC 0.65 UNIT °C/W Notes a. Duty cycle  1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR4 material). S16-2291-Rev. A, 14-Nov-16 Document Number: 75153 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90220E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 200 - - VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - 250 nA VDS = 200 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, TJ = 125 °C - - 150 On-state drain current a ID(on) Gate-source threshold voltage Drain-source on-state resistance a Forward transconductance a RDS(on) gfs μA VDS = 200 V, VGS = 0 V, TJ = 175 °C - - 5 mA VDS  10 V, VGS = 10 V 30 - - A VGS = 10 V, ID = 15 A - 0.0180 0.0216 VGS = 7.5 V, ID = 10 A - 0.0188 0.0235  VDS = 15 V, ID = 15 A - 37 - - 1950 - - 170 - - 15 - S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg VDS = 100 V, VGS = 0 V, f = 1 MHz pF - 31.6 48 VDS = 100 V, VGS =10 V, ID = 15 A - 8.6 - - 7.6 - f = 1 MHz 0.6 3 6 - 15 30 - 35 53 - 28 42 tf - 38 57 Pulse diode forward current (t = 100 μs) ISM - - 100 Body diode voltage VSD - 0.85 1.5 V - 120 180 ns - 0.91 1.37 μC - 95 - Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 100 V, RL = 8.3 , ID  12 A, VGEN = 10 V, Rg = 1  nC  ns Drain-Source Body Diode Characteristics Body diode reverse recovery time trr IF = 12 A, VGS = 0 V Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 25 - IRM(REC) - 12 18 Body diode peak reverse recovery charge IF = 12 A, di/dt = 100 A/μs A ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2291-Rev. A, 14-Nov-16 Document Number: 75153 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90220E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 100 Axis Title 10000 10000 100 VGS = 10 V thru 7 V 1000 60 VGS = 6 V 40 100 20 1000 60 1st line 2nd line ID - Drain Current (A) 80 1st line 2nd line 40 20 VGS = 5 V TC = 125 °C 0 10 0 1 2 3 4 TC = -55 °C 0 0 5 2 4 6 8 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 2nd line 10 10 Transfer Characteristics Output Characteristics Axis Title Axis Title 4500 0.03 1000 1st line 2nd line Vgs = 7.5 V 0.02 Vgs = 10 V 100 2nd line C - Capacitance (pF) 10000 0.04 2nd line RDS(on) - On-Resistance (Ω) 100 TC = 25 °C 0.01 10000 3600 1000 2700 1st line 2nd line 2nd line ID - Drain Current (A) 80 Ciss 1800 100 Coss 900 Crss 0 10 0 20 40 60 80 0 10 0 100 40 60 80 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance Axis Title 10000 ID = 20 A 2.8 1st line 2nd line 6 VDS = 160 V 4 100 2 0 10 14 21 28 Qg - Total Gate Charge (nC) 2nd line Gate Charge S16-2291-Rev. A, 14-Nov-16 35 2.2 1000 1st line 2nd line 1000 2nd line RDS(on) - On-Resistance (Normalized) VGS = 10 V, ID = 15 A VDS = 50 V 7 10000 VDS = 100 V 8 0 100 Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 20 1.6 100 VGS = 7.5 V, ID = 10 A 1.0 0.4 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) 2nd line On-Resistance vs. Junction Temperature Document Number: 75153 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90220E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 10000 0.06 TJ = 150 °C 1000 1 1st line 2nd line TJ = 25 °C 0.1 100 0.01 0.001 0.05 0.2 0.4 0.6 0.8 1.0 TJ = 25 °C 0.02 100 0.01 0 1.2 10 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 10000 60 10000 4.0 TC = -55 °C 2nd line gfs - Transconductance (S) ID = 250 μA 3.5 1000 3.0 1st line 2nd line 2nd line VGS(th) (V) 1000 0.03 10 0 TJ = 150 °C 0.04 2.5 100 2.0 1.5 10 -50 -25 0 25 50 45 TC = 25 °C 1000 30 1st line 2nd line 2nd line IS - Source Current (A) 10 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) ID = 15 A TC = 125 °C 100 15 0 75 100 125 150 175 10 0 5 10 15 TJ - Temperature (°C) 2nd line ID - Drain Current (A) 2nd line Threshold Voltage Transconductance 20 25 Axis Title 1000 10000 IDM limited Limited by RDS(on) (1) 100 μs 10 1000 1 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 DC, 10 s, 100 1 s, 100 ms 0.1 TC = 25 °C Single pulse BVDSS limited 0.01 0.1 (1) 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-2291-Rev. A, 14-Nov-16 Document Number: 75153 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90220E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 70 10000 1000 42 1st line 2nd line 2nd line ID - Drain Current (A) 56 28 100 14 0 10 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title ID = 10 mA 230 220 2nd line IDAV (A) 1000 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 100 10000 240 25 °C 150 °C 100 210 200 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) 2nd line Drain Source Breakdown vs. Junction Temperature 10 0.00001 0.0001 0.001 Time (s) 2nd line IDAV vs. Time Note a. The power dissipation PD is based on TJ max. = 25 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-2291-Rev. A, 14-Nov-16 Document Number: 75153 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUM90220E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.01 0.02 0.001 Single pulse 0.0001 0.00001 0.0001 0.001 0.01 Pulse Time (s) 0.1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75153. S16-2291-Rev. A, 14-Nov-16 Document Number: 75153 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-263 (D2PAK): 3-LEAD -B- L2 6 E1 K D4 -A- c2 D2 D3 A E L3 L D D1 E3 A A b2 b e c Detail “A” E2 0.010 M A M 2 PL 0° L4 -5 ° INCHES L1 DETAIL A (ROTATED 90°) c* c c1 c1 M b b1 SECTION A-A MIN. MAX. MIN. MAX. A 0.160 0.190 4.064 4.826 b 0.020 0.039 0.508 0.990 b1 0.020 0.035 0.508 0.889 1.397 b2 0.045 0.055 1.143 Thin lead 0.013 0.018 0.330 0.457 Thick lead 0.023 0.028 0.584 0.711 Thin lead 0.013 0.017 0.330 0.431 Thick lead 0.023 0.027 0.584 0.685 c2 0.045 0.055 1.143 1.397 D 0.340 0.380 8.636 9.652 D1 0.220 0.240 5.588 6.096 D2 0.038 0.042 0.965 1.067 D3 0.045 0.055 1.143 1.397 D4 0.044 0.052 1.118 1.321 E 0.380 0.410 9.652 10.414 E1 0.245 - 6.223 - E2 0.355 0.375 9.017 9.525 E3 0.072 0.078 1.829 1.981 e Notes 1. Plane B includes maximum features of heat sink tab and plastic. 2. No more than 25 % of L1 can fall above seating plane by max. 8 mils. 3. Pin-to-pin coplanarity max. 4 mils. 4. *: Thin lead is for SUB, SYB. Thick lead is for SUM, SYM, SQM. 5. Use inches as the primary measurement. 6. This feature is for thick lead. Revison: 30-Sep-13 MILLIMETERS DIM. 0.100 BSC 2.54 BSC K 0.045 0.055 1.143 1.397 L 0.575 0.625 14.605 15.875 L1 0.090 0.110 2.286 2.794 L2 0.040 0.055 1.016 1.397 L3 0.050 0.070 1.270 1.778 L4 M 0.010 BSC - 0.254 BSC 0.002 - 0.050 ECN: T13-0707-Rev. K, 30-Sep-13 DWG: 5843 1 Document Number: 71198 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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