TCED1100G

TCED1100/TCED1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Gain FEATURES C E • Extra low coupling capacity - typical 0.2 pF • High common mode rejection • Available in single or four channels • Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak • Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV peak 17199 C • Rated isolation VIOWM = 600 VRMS V D E voltage (RMS • Rated recurring peak VIORM = 600 VRMS (848 V peak) DESCRIPTION The TCED1100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. includes voltage DC) (repetitive) • Thickness though insulation ≥ 0.75 mm • Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI ≥ 175 • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC VDE STANDARDS APPLICATIONS These couplers perform safety functions according to the following equipment standards: • Switch-mode power supplies • DIN EN 60747-5-5 Optocoupler for electrical safety requirements • Computer peripheral interface • Line receiver • IEC EN 60950 Office machines (applied for reinforced isolation for mains voltage ≤ 400 VRMS) • Microprocessor system interface • VDE 0804 Telecommunication apparatus and data processing • Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation): - for appl. class I - IV at mains voltage ≤ 300 V - for appl. class I - III at mains voltage ≤ 600 V according to DIN EN 60747-5-5 • IEC 60065 Safety for mains-operated household apparatus electronic and related • Reinforced isolation provides circuit protection against electrical shock (safety class II) AGENCY APPROVALS • UL1577, file no. E76222 system code U, double protection • CSA 22.2 bulletin 5A, double protection • BSI IEC60950; IEC60065 • DIN EN 60747-5-5 • FIMKO ORDER INFORMATION PART REMARKS TCED1100 CTR 600 %, DIP-4 TCED1100G CTR 600 %, DIP-4 Note G = leadform 10.16 mm; G is not marked on the body. www.vishay.com 798 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83539 Rev. 1.8, 16-May-08 TCED1100/TCED1100G Optocoupler, Phototransistor Output, High Gain Vishay Semiconductors (1) ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 6 V Forward current IF 60 mA IFSM 1.5 A Pdiss 100 mW Tj 125 °C Collector emitter voltage VCEO 35 V Emitter collector voltage VECO 7 V mA tp ≤ 10 µs Forward surge current Power dissipation Junction temperature OUTPUT Collector current IC 80 ICM 100 mA Pdiss 150 mW Tj 125 °C Isolation test voltage (RMS) VISO 5000 VRMS Total power dissipation Ptot 250 mW Operating ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C tp/T = 0.5, tp ≤ 10 ms Collector peak current Power dissipation Junction temperature COUPLER 2 mm from case, t ≤ 10 s Soldering temperature (2) Notes (1) T amb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to wave profile for soldering conditions for through hole devices. ELECTRICAL CHARACTERISTCS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. 1.4 UNIT INPUT IF = 20 mA VF 1.15 VR = 0 V, f = 1 MHz Cj 50 Collector emitter voltage IC = 1 mA VCEO 32 V Emitter collector voltage IE = 100 µA VECO 7 V VCE = 10 V, IF = 0, E = 0 ICEO Collector emitter saturation voltage IF = 10 mA, IC =5 mA VCEsat Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 Ω fc 10 kHz f = 1 MHz Ck 0.3 pF Forward voltage Junction capacitance V pF OUTPUT Collector ermitter cut-off current 15 100 nA 1 V COUPLER Coupling capacitance Note Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements. CURRENT TRANSFER RATIO PARAMETER IC/IF Document Number: 83539 Rev. 1.8, 16-May-08 TEST CONDITION PART SYMBOL MIN. TYP. VCE = 2 V, IF = 1 mA TCED1100 CTR 600 800 For technical questions, contact: optocoupler.answers@vishay.com MAX. UNIT % www.vishay.com 799 TCED1100/TCED1100G Optocoupler, Phototransistor Output, High Gain Vishay Semiconductors MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF 130 mA Pdiss 265 mW VIOTM 8 kV Tsi 150 °C INPUT Forward current OUTPUT Power dissipation COUPLER Rated impulse voltage Safety temperature Note According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. INSULATION RATED PARAMETERS TEST CONDITION SYMBOL MIN. Partial discharge test voltage routine test PARAMETER 100 %, ttest = 1 s Vpd 1.6 Partial discharge test voltage lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8 kV Vpd 1.3 kV VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω Insulation resistance MAX. UNIT kV VIOTM 300 P tot - Total Power Dissipation (mW) TYP. t1, t2 t3 , t4 ttest tstres Photodarlington Psi (mW) 250 200 = 1 to 10 s =1s = 10 s = 12 s VPd 150 VIOWM VIORM 100 IR-Diode Isi (mA) 50 0 0 0 14887 25 50 75 100 125 150 13930 Tamb - Ambient Temperature (°C) Fig. 1 - Derating Diagram t3 ttest t4 tTr = 60 s t1 t2 t stres t Fig. 2 - Test Pulse Diagram for Sample Test According to DIN EN 60747-5-5/DIN EN 60747-; IEC60747 SWITCHING CHARACTERISTICS TEST CONDITION SYMBOL Rise time PARAMETER VCC = 2 V, IC = 10 mA, RL = 100 Ω, (see figure 3) tr 300 µs Fall time VCC = 2 V, IC = 10 mA, RL = 100 Ω, (see figure 3) tf 250 µs www.vishay.com 800 MIN. For technical questions, contact: optocoupler.answers@vishay.com TYP. MAX. UNIT Document Number: 83539 Rev. 1.8, 16-May-08 TCED1100/TCED1100G Optocoupler, Phototransistor Output, High Gain IF 0 + V CC IF Vishay Semiconductors IF 0 I C = 10 mA tp IC R G = 50 Ω tp = 0.01 T t 100 % 90 % t p = 50 s 10 % 0 Channel I Channel II 50 Ω RL 14779 Oscilloscope R I = 1 MΩ C I = 20 pF tr td t on tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time ts tf t off ts tf t off (= ts + tf) t Storage time Fall time Turn-off time 96 11698 Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 4 - Switching Times TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified I F = 10 mA VF - Forward Voltage (V) 1.2 1.1 1.0 0.9 0.8 0 14389 40 60 80 100 Tamb - Ambient Temperature (°C) 1000 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 14391 Fig. 7 - Relative Current Transfer Ratio vs. Ambient Temperature I CEO - Collector Dark Current, with Open Base (nA) 10 000 10 1 V F - Forward Voltage (V) Fig. 6 - Forward Current vs. Forward Voltage VCE = 10 V IF = 0 1000 100 10 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Document Number: 83539 Rev. 1.8, 16-May-08 0.5 - 30 - 20 - 10 0 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) 100 000 100 14390 VCE = 5 V I F = 1 mA 1.4 20 Fig. 5 - Forward Voltage vs. Ambient Temperature I F - Forward Current (mA) 1.5 CTR rel - Relative Current Transfer Ratio 1.3 20 14392 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 8 - Collector Dark Current vs. Ambient Temperature For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 801 TCED1100/TCED1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Gain 1000 10 000 CTR - Current Transfer Ratio (%) IC - Collector Current (mA) VCE = 2 V 100 10 1 VCE = 2 V 1000 100 0.1 0.1 14393 1 10 I F - Forward Current (mA) 10 0.1 100 14396 Fig. 9 - Collector Current vs. Forward Current 1 10 I F - Forward Current (mA) 100 Fig. 12 - Current Transfer Ratio vs. Forward Current 100 I C - Collector Current (mA) I F = 2 mA 1 mA 10 0.5 mA 0.2 mA 1 0.1 mA 0.1 0.1 1 10 100 VCE - Collector Emitter Voltage (V) 14394 V CEsat - Collector Emitter Saturation Voltage (V) Fig. 10 - Collector Current vs. Collector Emitter Voltage 1.1 CTR = 200 % used 1.0 100 % 0.9 50 % 25 % 0.8 0.7 0.6 14395 1 10 100 I C - Collector Current (mA) Fig. 11 - Collector Emitter Saturation Voltage vs. Collector Current www.vishay.com 802 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83539 Rev. 1.8, 16-May-08 TCED1100/TCED1100G Optocoupler, Phototransistor Output, High Gain Vishay Semiconductors PACKAGE DIMENSIONS in millimeters < 4.75 3.6 ± 0.1 7.62 nom. 4.4 ± 0.2 4.5 ± 0.2 6.3 ± 0.1 5 3.3 0.25 ± 0.0 0.53 ± 0.05 9 ± 0.8 1.32 ± 0.05 2.54 nom. E. g.: Special features: endstackable to 2.54 mm (0.100") spacing 4 3 Weight: ca. 0.25 g Creepage distance: > 6 mm Air path: > 6 mm after mounting on PC board 1 2 2.54 technical drawings according to DIN specifications 2.54 14789 4.5 ± 0.2 6.3 ± 0.1 0.53 ± 0.05 4.4 ± 0.2 7.62 nom. 3.6 ± 0.1 7.25 ± 0.2 < 4.75 0.25 ± 0.05 1.32 ± 0.05 10.16 ± 0.3 2.54 nom. E. g.: Special features: endstackable to 2.54 mm (0.100") spacing 4 3 1 2 2.54 2.54 Weight: ca. 0.25 g Creepage distance: > 8 mm Air path: > 8 mm after mounting on PC board Document Number: 83539 Rev. 1.8, 16-May-08 technical drawings according to DIN specifications 14792 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 803 TCED1100/TCED1100G Vishay Semiconductors Optocoupler, Phototransistor Output, High Gain OZONE DEPLETING SUBSTANCES POLICY STATEMENT It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively. 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 804 For technical questions, contact: optocoupler.answers@vishay.com Document Number: 83539 Rev. 1.8, 16-May-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1