V20100C-E3/4W

V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS ® TO-220AB ITO-220AB • Trench MOS Schottky technology • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low forward voltage drop, low power losses 2 3 V20100C 2 1 1 3 • Solder bath temperature 275 °C maximum 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) VF20100C PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 D2PAK (TO-263AB) • High efficiency operation PIN 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-262AA K TYPICAL APPLICATIONS K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. 2 1 VB20100C PIN 1 VI20100C K PIN 2 HEATSINK DESIGN SUPPORT TOOLS 1 2 PIN 1 PIN 2 PIN 3 K 3 MECHANICAL DATA Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade click logo to get started Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Models Available per Polarity: as marked PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 100 V IFSM 150 A VF at IF = 10 A 0.58 V Mounting Torque: 10 in-lbs maximum TJ max. 150 °C Package TO-220AB, ITO-220AB, D2PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL V20100C VF20100C VB20100C VI20100C UNIT PARAMETER VRRM Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) per device per diode IF(AV) 100 20 10 V A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode EAS 150 mJ Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per diode IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs VAC 1500 V TJ, TSTG -40 to +150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Revision: 18-Jun-2018 Document Number: 88977 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IR = 10 mA Breakdown voltage IF = 5 A TYP. MAX. UNIT VBR 105 (minimum) - V 0.55 - TA = 25 °C IF = 10 A Instantaneous forward voltage per diode SYMBOL TA = 25 °C 0.65 0.79 0.50 - 0.58 0.68 TA = 25 °C 17 - µA TA = 125 °C 5.3 - mA - 800 µA 12 25 mA VF (1) IF = 5 A TA = 125 °C IF = 10 A VR = 70 V Reverse current per diode IR (2) TA = 25 °C VR = 100 V TA = 125 °C V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20100C VF20100C VB20100C VI20100C UNIT RJC 2.8 5.5 2.8 2.8 °C/W Typical thermal resistance per diode ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY TO-220AB V20100C-E3/4W 1.881 4W 50/tube DELIVERY MODE Tube ITO-220AB VF20100C-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20100C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB20100C-E3/8W 1.39 8W 800/tube Tape and reel TO-262AA VI20100C-E3/4W 1.452 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 20 24 20 VF20100C 16 D = 0.5 18 Average Power Loss (W) Average Forward Current (A) Resistive or Inductive Load V20100C VI(B)20100C 12 8 4 16 D = 0.2 14 D = 1.0 D = 0.1 12 10 8 T 6 4 2 0 D = 0.8 D = 0.3 D = tp/T tp 16 20 0 0 25 50 75 100 125 150 175 0 4 8 12 24 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 88977 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.vishay.com Vishay General Semiconductor 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TA = 150 °C TA = 125 °C 10 TA = 25 °C 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V(I)20100C 1 0.01 1.6 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode 10 Transient Thermal Impedance (°C/W) 100 Instantaneous Reverse Current (mA) Junction to Case TA = 150 °C 10 TA = 125 °C 1 0.1 TA = 25 °C 0.01 0.001 10 20 30 40 50 60 70 80 90 100 Junction to Case VF20100C 1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 7 - Typical Transient Thermal Impedance Per Diode Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 0.1 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Revision: 18-Jun-2018 Document Number: 88977 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 3 0.160 (4.06) 0.140 (3.56) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.603 (15.32) 0.573 (14.55) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 18-Jun-2018 Document Number: 88977 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) TO-263AB 0.411 (10.45) 0.190 (4.83) 0.380 (9.65) 0.160 (4.06) 0.401 (10.19) 0.381 (9.68) 0.022 (0.56) 0.014 (0.35) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.245 (6.22) MIN. K 0.33 (8.38) MIN. 0.055 (1.40) 0.360 (9.14) 0.624 (15.85) 0.320 (8.13) 12 K 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.037 (0.940) 0.090 (2.29) 0.027 (0.686) 0.105 (2.67) 0.021 (0.53) 0.014 (0.36) 0.095 (2.41) 0.15 (3.81) MIN. 0.08 (2.032) MI N. 0.205 (5.20) 0.140 (3.56) 0.105 (2.67) 0.195 (4.95) 0.110 (2.79) 0.095 (2.41) Revision: 18-Jun-2018 Document Number: 88977 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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