V20PWM10C-M3/I

V20PWM10C www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 5 A FEATURES eSMP® Series • Very low profile - typical height of 1.3 mm • Trench MOS Schottky technology • Ideal for automated placement K • Low forward voltage drop, low power losses • High efficiency operation 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C 2 • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 SlimDPAK (TO-252AE) PIN 1 PIN 2 K • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 HEATSINK DESIGN SUPPORT TOOLS TYPICAL APPLICATIONS click logo to get started For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications. Models Available MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 100 V IFSM 150 A VF at IF = 10 A (TA = 125 °C) 0.63 V TJ max. 175 °C Package SlimDPAK (TO-252AE) Circuit configuration Common cathode Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code UNIT V20PWM10C Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) V20PWM10C VRRM per device per diode IF(AV) (1) 100 V 20 A 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 150 A Operating junction temperature range TJ (2) -40 to +175 °C Storage temperature range TSTG -55 to +175 °C Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/R D J JA Revision: 15-Feb-2019 Document Number: 87510 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PWM10C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 5.0 A IF = 10 A Instantaneous forward voltage per diode IF = 5.0 A IF = 10 A VR = 70 V Reverse current per diode VR = 100 V Typical junction capacitance SYMBOL TA = 25 °C VF (1) TA = 125 °C TYP. MAX. 0.60 - 0.74 0.82 0.53 - 0.63 0.71 TA = 25 °C 0.01 - TA = 125 °C 1.5 - - 0.15 3 8 900 - TA = 25 °C IR (2) TA = 125 °C 4.0 V, 1 MHz CJ UNIT V mA pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V20PWM10C RJA (1)(2) 55 RJM (3) 1.8 UNIT °C/W Notes (1) The heat generated must be less than thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, mounted on recommended copper pad area; thermal resistance R JA - junction to ambient (3) Mounted on infinite heat sink; thermal resistance R JM - junction-to-mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE V20PWM10C-M3/I 0.20 I 4500 13" diameter plastic tape and reel V20PWM10CHM3/I (1) 0.20 I 4500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 15-Feb-2019 Document Number: 87510 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PWM10C www.vishay.com Vishay General Semiconductor 25.0 Instantaneous Reverse Current (mA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) TM =151 °C, RthJM = 1.8 °C/W 20.0 15.0 10.0 TA = 25 °C, RthJA = 55 °C/W 5.0 0 0 25 50 75 100 125 150 100 TJ = 175 °C 10 TJ = 125 °C 1 TJ = 100 °C 0.1 0.01 TJ = 25 °C 0.001 0.0001 10 175 20 30 40 Fig. 1 - Maximum Forward Current Derating Curve 60 70 80 90 100 Fig. 4 - Typical Reverse Leakage Characteristics 10 000 8.0 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Junction Capacitance (pF) D = 0.8 7.0 D = 0.5 6.0 D = 1.0 D = 0.3 5.0 4.0 D = 0.2 3.0 D = 0.1 T 2.0 1.0 D = tp/T 1000 100 10 tp 1 0.0 0 2 4 6 8 10 0.1 12 1 Average Forward Current (A) Transient Thermal Impedance (°C/W) TJ = 175 °C TJ = 150 °C TJ = 125 °C 1 TJ = 100 °C TJ = 25 °C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 100 Fig. 5 - Typical Junction Capacitance 100 10 10 Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Instantaneous Forward Current (A) 50 Percent of Rated Peak Reverse Voltage (%) Mount Temperature (°C) Average Power Loss (W) TJ = 150 °C 1.4 1.6 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics 100 Junction to Ambient 10 Junction to Mount 1 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Revision: 15-Feb-2019 Document Number: 87510 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V20PWM10C www.vishay.com Vishay General Semiconductor Thermal Resistance (°C/W) 80 Epoxy printed circuit board FR4 copper thickness = 70 μm 70 60 50 40 30 20 10 S (cm2) 0 0 1 2 3 4 5 6 7 8 9 10 Copper Pad Areas (cm2) Fig. 7 - Typical Resistance Junction to Ambient vs. Copper Pad Areas PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SlimDPAK (TO-252AE) 0.055 (1.40) 0.047 (1.20) 0.249 (6.32) 0.239 (6.08) 0.016 (0.41) 0.010 (0.25) 0.028 (0.70) 0.012 (0.30) 0.265 (6.72) 0.255 (6.48) 0.370 (9.40) 0.339 (8.60) 0.008 0.000 0.055 0.039 0.090 NOM. (2.29) (0.20) (0.00) (1.40) (1.00) 0.180 NOM. (4.57) Mounting Pad Layout 0.240 MIN. (6.10) 0.224 (5.70) 0.209 (5.30) 0.205 NOM. (5.20) 0.235 MIN. (5.97) 0.386 REF. (9.80) 0.075 MIN. (1.90) 0.035 (0.90) 0.028 (0.70) 0.090 NOM. (2.29) 0.055 MIN. (1.40) Revision: 15-Feb-2019 Document Number: 87510 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000