VI30202C-M3/4W

V30202C, VF30202C, VB30202C, VI30202C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS ® TO-220AB • Trench MOS Schottky technology Gen 2 ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 3 1 V30202C 1 VF30202C PIN 1 PIN 2 PIN 1 PIN 3 CASE PIN 3 TO-263AB 2 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PIN 2 TYPICAL APPLICATIONS TO-262AA For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. K K MECHANICAL DATA 2 1 1 VB30202C PIN 1 Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade VI30202C K PIN 2 2 3 HEATSINK PIN 1 PIN 2 PIN 3 K Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker testt PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 200 V IFSM 260 A VF at IF = 15 A (TA = 125 °C) 0.65 V per Polarity: as marked Mounting Torque: 10 in-lbs max. TJ max. 175 °C Package TO-220AB, ITO-220AB, TO-263AB, TO-262AA Diode variations Common cathode MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode IF(AV) V30202C VF30202C VB30202C 200 30 15 VI30202C UNIT V A Maximum DC reverse voltage VDC 160 V Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 260 A dV/dt 10 000 V/μs VAC 1500 V TJ, TSTG -40 to +175 °C Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink, t = 1 min Operating junction and storage temperature range Revision: 14-May-2018 Document Number: 87799 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30202C, VF30202C, VB30202C, VI30202C www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL IF = 5 A IF = 10 A Instantaneous forward voltage per diode (1) TA = 25 °C IF = 15 A VF IF = 5 A IF = 10 A TA = 125 °C IF = 15 A VR = 160 V Reverse current per diode (2) VR = 200 V TA = 25 °C TA = 125 °C IR TA = 25 °C TA = 125 °C TYP. MAX. 0.69 - UNIT 0.75 - 0.80 0.88 0.54 - 0.61 - 0.65 0.72 0.8 - μA 1.5 - mA - 250 μA 4.0 14 mA VI30202C UNIT V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  5 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL V30202C VF30202C per diode RJC 1.8 4.0 1.8 per device RJC 1.0 2.8 1.0 52 60 52 per device RJA (1)(2) VB30202C °C/W Notes (1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dP /dT < 1/R D J JA (2) Free air, without heatsink ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V30202C-M3/4W PREFERRED P/N 1.89 4W 50/tube Tube ITO-220AB VF30202C-M3/4W 1.75 4W 50/tube Tube TO-263AB VB30202C-M3/4W 1.38 4W 50/tube Tube TO-263AB VB30202C-M3/8W 1.38 8W 800/reel Tape and reel TO-262AA VI30202C-M3/4W 1.46 4W 50/tube Tube Revision: 14-May-2018 Document Number: 87799 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30202C, VF30202C, VB30202C, VI30202C www.vishay.com Vishay General Semiconductor 32 100 000 RthJA = Rth JC Instantaneous Reverse Current (μA) Average Forward Rectified Current (A) RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 28 24 20 V(B,I)30202C VF30202C 16 12 8 TA, RthJA 4 0 0 25 50 75 100 125 150 175 TA = 175 °C 10 000 TA = 100 °C 100 10 1 0.01 10 40 50 60 70 80 90 100 10 000 D = 1.0 D = 0.1 T D = tp/T Junction Capacitance (pF) Average Power Loss (W) 30 Fig. 4 - Typical Reverse Characteristics Per Diode D = 0.8 D = 0.2 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 tp 10 0 2 4 6 8 10 12 14 16 0.1 18 Average Forward Current (A) Fig. 2 - Forward Power Loss Characteristics Per Diode TA = 175 °C TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C TA = 25 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Instantaneous Forward Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 1 10 100 Reverse Voltage (V) Fig. 5 - Typical Junction Capacitance Per Diode Transient Thermal Impedance (°C/W) 100 Instantaneous Forward Current (A) 20 Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve D = 0.5 D = 0.3 TA = 25 °C 0.1 Case Temperature (°C) 13 12 11 10 9 8 7 6 5 4 3 2 1 0 TA = 150 °C TA = 125 °C 1000 10 Junction to Case 1 V(B,I)30202C VF30202C 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 6 - Typical Transient Thermal Impedance Per Device Revision: 14-May-2018 Document Number: 87799 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30202C, VF30202C, VB30202C, VI30202C www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.161 (4.08) 0.139 (3.53) 0.113 (2.87) 0.103 (2.62) PIN 1 2 3 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.603 (15.32) 0.573 (14.55) 0.110 (2.79) 0.100 (2.54) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.36) Revision: 14-May-2018 Document Number: 87799 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V30202C, VF30202C, VB30202C, VI30202C www.vishay.com Vishay General Semiconductor TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) D2PAK (TO-263AB) 0.411 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN. 0.401 (10.19) 0.381 (9.68) 0.022 (0.56) 0.014 (0.35) Mounting Pad Layout 0.42 (10.66) min. 0.055 (1.40) 0.045 (1.14) K 0.33 (8.38) min. 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591 (15.00) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.055 (1.40) 0.047 (1.19) 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) min. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 14-May-2018 Document Number: 87799 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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