VS-10ETF10S-M3, VS-10ETF12S-M3 Series
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Vishay Semiconductors
Surface Mount Fast Soft Recovery Rectifier Diode, 10 A
FEATURES
• Glass passivated pellet chip junction
Base
cathode
+
2
• Meets MSL level 1, per
LF maximum peak of 245 °C
• Designed and qualified
JEDEC®-JESD 47
2
1
3
D2PAK (TO-263AB)
1
Anode -
J-STD-020,
according
to
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
- Anode
APPLICATIONS
• Output rectification and
choppers and converters
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VR
1000 V, 1200 V
VF at IF
1.33 V
IFSM
155 A
trr
80 ns
TJ max.
150 °C
freewheeling
• Input rectifications where severe
conducted EMI should be met
in
inverters,
restrictions
on
DESCRIPTION
The VS-10ETF..S-M3 fast soft recovery rectifier series has
been optimized for combined short reverse recovery time
and low forward voltage drop.
Snap factor
0.6
Package
D2PAK (TO-263AB)
Circuit configuration
Single
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
VALUES
UNITS
10
A
Sinusoidal waveform
VRRM
1000, 1200
V
IFSM
155
A
VF
10 A, TJ = 25 °C
trr
1 A, 100 A/μs
TJ
Range
1.33
V
80
ns
-40 to +150
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
VS-10ETF10S-M3
1000
1100
VS-10ETF12S-M3
1200
1300
VOLTAGE RATINGS
PART NUMBER
4
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle non-repetitive
surge current
SYMBOL
IF(AV)
IFSM
Maximum I2t for fusing
I2t
Maximum I2√t for fusing
I2√t
TEST CONDITIONS
VALUES
TC = 125 °C, 180° conduction half sine wave
10
10 ms sine pulse, rated VRRM applied
130
10 ms sine pulse, no voltage reapplied
155
10 ms sine pulse, rated VRRM applied
85
10 ms sine pulse, no voltage reapplied
120
t = 0.1 ms to 10 ms, no voltage reapplied
1200
UNITS
A
A2s
A2√s
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VS-10ETF10S-M3, VS-10ETF12S-M3 Series
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ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
VFM
rt
VF(TO)
IRM
TEST CONDITIONS
VALUES
10 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
VR = rated VRRM
TJ = 150 °C
UNITS
1.33
V
22.9
mΩ
0.96
V
0.1
mA
4
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
SYMBOL
trr
TEST CONDITIONS
IF at 10 Apk
25 A/μs
25 °C
VALUES
UNITS
310
ns
4.7
A
μC
Reverse recovery current
Irr
Reverse recovery charge
Qrr
1.05
S
0.6
Typical snap factor
IFM
trr
t
dir
dt
Qrr
IRM(REC)
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJC
DC operation
UNITS
-40 to +150
°C
1.5
°C/W
RthJA (1)
62
Approximate weight
Marking device
VALUES
Case style D2PAK (TO-263AB)
2
g
0.07
oz.
10ETF10S
10ETF12S
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
For recommended footprint and soldering techniques refer to application note #AN-994
Revision: 16-Dec-2021
Document Number: 94885
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VS-10ETF10S-M3, VS-10ETF12S-M3 Series
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24
10ETF.. Series
RthJC (DC) = 1.5 °C/W
145
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
150
140
Ø
Conduction angle
135
130
125
120
115
12
RMS limit
Ø
8
Conduction period
4
10ETF.. Series
TJ = 150 °C
0
0
2
4
10
8
6
2
0
12
4
6
8
12
10
16
14
Average Forward Current (A)
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 4 - Forward Power Loss Characteristics
150
140
10ETF.. Series
RthJC (DC) = 1.5 °C/W
145
140
Ø
135
Conduction period
130
30°
60°
125
90°
120
8
6
100
90
80
70
60
10
VS-10ETF..S Series
30
115
4
110
40
DC
180°
2
120
50
120°
0
At any rated load condition and with
rated Vrrm applied following surge.
Initial Tj = 150°C
at 60 Hz 0.0083s
at 50 Hz 0.0100s
130
Peak Half Sine Wave
Forward Current (A)
Maximum Allowable Case
Temperature (°C)
16
60° 90° 120° 180°
30°
12
14
16
1
10
100
Average Forward Current (A)
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
170
16
180°
120°
90°
60°
30°
14
12
150
Peak Half Sine Wave
Forward Current (A)
Maximum Average Forward
Power Loss (W)
DC
180°
120°
90°
60°
30°
20
10
RMS limit
8
6
Ø
Conduction angle
4
10ETF.. Series
TJ = 150 °C
2
2
4
6
8
110
90
70
50
30
0
0
130
10
Maximum non-repetitive surge current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
10
0.01
VS-10ETF..S Series
0.1
1
10
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 16-Dec-2021
Document Number: 94885
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VS-10ETF10S-M3, VS-10ETF12S-M3 Series
Vishay Semiconductors
1000
2.0
10ETF.. Series
TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
Qrr - Typical Reverse
Recovery Charge (µC)
Instantaneous Forward Current (A)
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100
10
1
0.5
IFM = 8 A
1.2
IFM = 5 A
0.8
IFM = 2 A
0.4
IFM = 1 A
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
4.5
40
80
120
160
200
Instantaneous Forward Voltage (V)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 7 - Forward Voltage Drop Characteristics
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
5
10ETF.. Series
TJ = 150 °C
Qrr - Typical Reverse
Recovery Charge (µC)
10ETF.. Series
TJ = 25 °C
0.5
trr - Typical Reverse
Recovery Time (µs)
1.6
10ETF.. Series
0.6
IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
0.4
0.3
0.2
0.1
0
IFM = 10 A
4
IFM = 8 A
3
IFM = 5 A
2
IFM = 2 A
1
IFM = 1 A
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.8
20
10ETF.. Series
TJ = 25 °C
0.6
Irr - Typical Reverse
Recovery Current (A)
10ETF.. Series
TJ = 150 °C
trr - Typical Reverse
Recovery Time (µs)
IFM = 10 A
IFM = 10 A
IFM = 8 A
IFM = 5 A
IFM = 2 A
IFM = 1 A
0.4
0.2
0
IFM = 10 A
16
IFM = 8 A
12
IFM = 5 A
IFM = 2 A
8
IFM = 1 A
4
0
0
40
80
120
160
200
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
Revision: 16-Dec-2021
Document Number: 94885
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETF10S-M3, VS-10ETF12S-M3 Series
www.vishay.com
Vishay Semiconductors
25
Irr - Typical Reverse
Recovery Current (A)
10ETF.. Series
TJ = 150 °C
IFM = 10 A
20
IFM = 8 A
15
IFM = 5 A
IFM = 2 A
10
IFM = 1 A
5
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
ZthJC - Transient Thermal Impedance (°C/W)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
10
Steady state value
(DC operation)
1
0.1
0.01
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
10ETF.. Series
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance ZthJC Characteristics
Revision: 16-Dec-2021
Document Number: 94885
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VS-10ETF10S-M3, VS-10ETF12S-M3 Series
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Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
E
T
F
12
S
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (10 = 10 A)
3
-
Circuit configuration:
TRL -M3
8
9
E = single
4
-
Package:
T = D2PAK (TO-263AB)
5
-
Type of silicon:
F = fast soft recovery rectifier
6
-
Voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
10 = 1000 V
12 = 1200 V
None = tube
TRR = tape and reel (right oriented)
TRL = tape and reel (left oriented)
9
-
-M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
BASE QUANTITY
PACKAGING DESCRIPTION
VS-10ETF10S-M3
50
Antistatic plastic tubes
VS-10ETF10STRR-M3
800
13" diameter reel
VS-10ETF10STRL-M3
800
13" diameter reel
VS-10ETF12S-M3
50
Antistatic plastic tubes
VS-10ETF12STRR-M3
800
13" diameter reel
VS-10ETF12STRL-M3
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96164
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96424
Revision: 16-Dec-2021
Document Number: 94885
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
C
2xb
2.64 (0.103)
2.41 (0.096)
(3)
E1
c
View A - A
± 0.004 M B
0.010 M A M B
2x e
Plating
Base
Metal
(4)
b1, b3
H
Gauge
plane
L
Seating
plane
L3
A1
Lead tip
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
c1 (4)
(c)
B
0° to 8°
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
0.110
L
1.78
2.79
0.070
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inches
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 13-Jul-17
Document Number: 96164
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 01-Jan-2023
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Document Number: 91000