VS-15TQ060STRRHM3

VS-15TQ060SHM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES • 150 °C TJ operation Base cathode 2 • Very low forward voltage drop • High frequency operation • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance 3 Anode 1 D2PAK N/C (TO-263AB) • Guard ring for enhanced ruggedness and long term reliability • Meets MSL level 1A, per J-STD-020, LF maximum peak of 245 °C PRIMARY CHARACTERISTICS • Meets JESD 201 class 1 whisker test IF(AV) 15 A • AEC-Q101 qualified VR 60 V VF at IF 0.56 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IRM typ. 45 mA at 125 °C TJ max. 150 °C EAS 6 mJ Package D2PAK (TO-263AB) Circuit configuration Single DESCRIPTION The VS-15TQ060SHM3 Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 15 A Rectangular waveform VRRM IFSM tp = 5 μs sine VF 15 Apk, TJ = 125 °C TJ Range 60 V 1000 A 0.56 V -55 to +150 °C VS-15TQ060SHM3 UNITS 60 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Repetitive avalanche current 50 % duty cycle at TC = 104 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 15 A 1000 260 A 6 mJ 1.50 A Revision: 27-Jul-2020 Document Number: 96305 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060SHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 15 A Maximum forward voltage drop See fig. 1 VFM (1) 30 A 15 A 30 A TJ = 25 °C TJ = 25 °C TJ = 125 °C VALUES UNITS 0.62 0.82 V 0.56 0.71 0.80 Maximum reverse leakage current IRM (1) Typical reverse leakage current IRM (1) Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 720 pF Typical series inductance LS Measured lead to lead 5 mm from package body 8.0 nH 10 000 V/μs VALUES UNITS -55 to +150 °C Maximum voltage rate of change dV/dt TJ = 125 °C TJ = 125 °C VR = rated VR VR = rated VR Rated VR mA 160 45 mA Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 3.25 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.50 2 g 0.07 oz. minimum 6 (5) maximum 12 (10) kgf. cm (lbf. in) Approximate weight Mounting torque Marking device °C/W Case style D2PAK (TO-263AB) 15TQ060SH Revision: 27-Jul-2020 Document Number: 96305 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060SHM3 Vishay Semiconductors 1000 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 100 10 150 °C 100 125 °C 10 100 °C 75 °C 1 50 °C 0.1 25 °C 0.01 0.001 1 0 0.4 0.8 1.2 1.6 0 2.0 10 20 30 40 50 60 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 0 10 20 30 40 50 60 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 0.1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 t2 0.01 0.001 0.00001 Single pulse (thermal resistance) 0.0001 0.001 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 10 . 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 27-Jul-2020 Document Number: 96305 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060SHM3 Vishay Semiconductors 150 14 140 12 130 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com DC 120 110 Square wave (D = 0.50) 80 % rated VR applied 100 90 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 10 8 RMS limit 6 4 DC 2 See note (1) 0 80 0 5 10 15 20 0 25 2 4 6 8 10 12 14 16 18 20 22 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (2) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 27-Jul-2020 Document Number: 96305 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-15TQ060SHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 15 T Q 060 S TRL H M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (15 A) 3 - Circuit configuration: T = TO-220 4 - Schottky “Q” series 5 - Voltage rating (060 = 60 V) 6 - S = D2PAK 7 - None = tube (50 pieces) TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 8 - H = AEC-Q101 qualified 9 - M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-15TQ060SHM3 50 1000 Antistatic plastic tube VS-15TQ060STRRHM3 800 800 13" diameter reel VS-15TQ060STRLHM3 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?95032 SPICE model www.vishay.com/doc?95600 Revision: 27-Jul-2020 Document Number: 96305 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors D2PAK, TO-262 DIMENSIONS - D2PAK in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb ± 0.004 M B 0.010 M A M B Plating 2x e Base Metal (4) b1, b3 H Gauge plane Seating plane Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. c1 (4) (c) B 0° to 8° L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 INCHES MAX. MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. INCHES MAX. MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 L3 2 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch Document Number: 95014 Revision: 31-Mar-09 e L4 (7) 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Outline conforms to JEDEC outline TO-263AB For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Outline Dimensions D2PAK, TO-262 Vishay Semiconductors DIMENSIONS - TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL A c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 4.06 4.83 0.160 0.190 0.119 A1 2.03 3.02 0.080 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 NOTES 4 4 4 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e 2.54 BSC 0.100 BSC L 13.46 14.10 0.530 0.555 L1 - 1.65 - 0.065 L2 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches www.vishay.com 2 2 (6) 3 Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 95014 Revision: 31-Mar-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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