VS-2EFU06HM3/I

VS-2EFU06HM3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 A FRED Pt® eSMP® FEATURES Series • Ultrafast recovery time, reduced Qrr, and soft recovery • 175 °C maximum operating junction temperature • For PFC CRM, snubber operation • Low forward voltage drop Top view • Low leakage current Bottom view • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMF (DO-219AB) Cathode • Wave and reflow solderable Anode • Compatible to SOD-123W package case outline • AEC-Q101 qualified, meets JESD 201 class 2 whisker test LINKS TO ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D 3D Models DESCRIPTION / APPLICATIONS State of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop, ultrafast recovery time, and soft recovery. PRIMARY CHARACTERISTICS IF(AV) 2A VR 600 V VF at IF 0.95 V The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and reliability characteristics. trr 55 ns TJ max. 175 °C Package SMF (DO-219AB) Circuit configuration Single These devices are intended for use in PFC, boost, lighting, in the AC/DC section of SMPS, freewheeling and clamp diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce power dissipation in the switching element and snubbers. MECHANICAL DATA Case: SMF (DO-219AB) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: J-STD-002 matte tin plated leads, solderable per Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 135 °C (1) 2 Non-repetitive peak surge current IFSM TJ = 25 °C, 6 ms square pulse 30 Operating junction and storage temperature range TJ, TStg -55 to +175 A °C Note (1) Device on PCB with 8 mm x 16 mm soldering lands Revision: 25-May-2021 Document Number: 95865 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EFU06HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Breakdown voltage, blocking voltage VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 2 A - 1.10 1.35 IF = 2 A, TJ = 150 °C - 0.95 1.15 IR = 100 μA UNITS V VR = VR rated - - 3 TJ = 150 °C, VR = VR rated - 20 100 VR = 600 V - 5 - pF MIN. TYP. MAX. UNITS - 42 - μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr IF = 0.5 A, IR = 1 A, Irr = 0.25 A - - 55 TJ = 25 °C - 40 - TJ = 125 °C Peak recovery current Reverse recovery charge - 63 - - 7.0 - - 8.1 - TJ = 25 °C - 140 - TJ = 125 °C - 255 - MIN. TYP. MAX. UNITS -55 - +175 °C IF = 2 A dIF/dt = 500 A/μs VR = 400 V TJ = 25 °C IRRM TJ = 125 °C Qrr ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Thermal resistance, junction to mount RthJM Device mounted on PCB with 8 mm x 16 mm soldering lands - - 15 °C/W Thermal resistance, junction to ambient RthJA Device mounted on PCB with 2 mm x 3.5 mm soldering lands - - 130 °C/W Approximate weight g oz. Case style SMF (DO-219AB) 100 MPU 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) Marking device 0.015 0.0005 TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 25 °C 175 °C 10 150 °C 125 °C 1 0.1 25 °C 0.01 TJ = -40 °C 0.1 0.001 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 25-May-2021 Document Number: 95865 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EFU06HM3 www.vishay.com Vishay Semiconductors 3.5 Average Power Loss (W) CT - Junction Capacitance (pF) 100 10 2.5 2 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 1.5 1 0.5 1 0 0 100 200 300 400 500 0 600 0.5 1 1.5 2 2.5 3 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics 180 140 170 120 100 160 trr (ns) Allowable Case Temperature (°C) RMS limit 3 DC 150 80 125 °C 60 25 °C 140 40 Square wave (D = 0.50) 80 % rated VR applied 130 20 See note (1) 120 0 0 0.4 0.8 1.2 1.6 2 2.4 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 4 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Typical Reverse Recovery Time vs. dIF/dt 300 280 260 125 °C 240 Qrr (nC) 220 200 180 160 25 °C 140 120 100 100 1000 dIF/dt (A/µs) Fig. 7 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 25-May-2021 Document Number: 95865 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-2EFU06HM3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 8 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 2 E F U 06 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (2 = 2 A) 3 - Circuit configuration: E = single diode 4 - F = SMF package 5 - Process type, 6 - Voltage code (06 = 600 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free U = ultrafast recovery ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER REEL MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-2EFU06HM3/I 10 000 10 000 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95572 Part marking information www.vishay.com/doc?95618 Packaging information www.vishay.com/doc?95577 SPICE model www.vishay.com/doc?96867 Revision: 25-May-2021 Document Number: 95865 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SMF (DO-219AB) DIMENSIONS in millimeters (inches) 0.85 (0.033) 0 (0.000) 0.1 (0.004) 5 5 0.10 (0.003) 1.7 (0.067) Detail Z enlarged 1.2 (0.047) 0.8 (0.031) 0.25 (0.010) 1.9 (0.075) 0.35 (0.014) 1.08 (0.043) 2.9 (0.114) 0.88 (0.035) 2.7 (0.106) 3.9 (0.154) 3.5 (0.138) Foot print recommendation: Created - Date: 15. February 2005 Rev. 3 - Date: 13. March 2007 Document no.:S8-V-3915.01-001 (4) 1.3 (0.051) 1.4 (0.055) 1.3 (0.051) 2.9 (0.114) 17247 Revision: 16-Apr-18 Document Number: 95572 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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