VS-30EPU12L-N3

VS-30EPU12L-N3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 30 A FRED Pt® FEATURES Base cathode • Ultrafast and soft recovery 2 • Optimized forward voltage drop • 175 °C maximum operating junction temperature 2 • Polyimide passivation 1 3 TO-247AD 2L • Rugged design 3 Anode 1 Cathode • Good thermal performance • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS DESCRIPTION / APPLICATIONS IF(AV) 30 A VR 1200 V VF at IF at 125 °C 2.05 V trr 49 ns TJ max. 175 °C Package TO-247AD 2L Circuit configuration Single Ultrafast recovery rectifiers designed with optimized performance of forward voltage drop, recovery time, and soft recovery. Polyimide passivated, planar structure, and the platinum doped life time control guarantee, ruggedness, reliability characteristics, and solid value proposition for efficiency and thermal performance. These devices are intended for use in boost stage in the AC/DC section of SMPS, high frequency output rectification of battery charger, inverters for solar inverters, or as freewheeling diodes in motor drive. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 1200 V Repetitive peak reverse voltage VRRM Average rectified forward current IF(AV) TC = 135 °C, D = 0.50 30 Non-repetitive peak surge current IFSM TC = 25 °C, tp = 10 ms, sine wave 300 Repetitive peak forward current Operating junction and storage temperature A IFRM 60 TJ, TStg -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF TEST CONDITIONS IR = 500 μA IF = 30 A MIN. TYP. MAX. 1200 - - - 2.15 2.68 IF = 30 A, TJ = 125 °C - 2.05 2.45 VR = VR rated - - 145 TJ = 125 °C, VR = VR rated - - 320 UNITS V μA Reverse leakage current IR Junction capacitance CT VR = 200 V - 29 - pF Series inductance LS Measured to lead 5 mm from package body - 8 - nH Revision: 19-Feb-2019 Document Number: 95927 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPU12L-N3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V TEST CONDITIONS - 49 - TJ = 25 °C - 220 - TJ = 125 °C - 356 - - 8.2 - - 13.3 - IF = 30 A dIF/dt = 100 A/μs VR = 390 V TJ = 25 °C TJ = 125 °C UNITS ns A TJ = 25 °C - 900 - TJ = 125 °C - 2388 - MIN. TYP. MAX. - 0.35 0.42 nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case TEST CONDITIONS RthJC UNITS Thermal resistance, junction to ambient RthJA Typical socket mount - 30 33 Thermal resistance, case to heat sink RthCS Mounting surface, flat, smooth, and greased - 0.25 0.4 - 0.2 - g - 0.07 - oz. 6.0 (5.0) - 12 (10) kgf · cm (lbf · in) -55 - 175 °C Weight Mounting torque Maximum junction and storage temperature range TJ, TStg Case style: TO-247AD 2L 30EPU12L 1000 100 TJ = 175 °C 10 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device °C/W TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 TJ = 150 °C 100 10 TJ = 125 °C TJ = 25 °C 1 0.1 0.01 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0 200 400 600 800 1000 1200 VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 19-Feb-2019 Document Number: 95927 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPU12L-N3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 1000 100 10 0 200 400 600 800 1000 1200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 0.01 DC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) 180 140 170 120 Average Power Loss (W) Allowable Solder Pad Temperature (°C) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 160 DC 150 140 Square wave (D = 0.50) 80 % rated VR applied 130 120 RMS limit 100 80 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 60 40 20 DC 0 0 5 10 15 20 25 30 35 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 10 20 30 40 50 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Revision: 19-Feb-2019 Document Number: 95927 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPU12L-N3 www.vishay.com Vishay Semiconductors 300 4000 TJ = 125 °C TJ = 25 °C 250 3500 50 A 200 Qrr (nC) trr (ns) 30 A 50 A 150 3000 30 A 2500 15 A 100 2000 50 15 A 1500 0 100 200 300 400 500 0 100 dIF/dt (A/μs) 300 400 500 dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 10 - Typical Stored Charge vs. dIF/dt 450 25 TJ = 25 °C TJ = 125 °C 400 350 20 30 A 15 50 A 30 A 300 Irec (A) trr (ns) 200 50 A 250 15 A 200 15 A 10 150 5 100 0 100 200 300 400 500 0 100 300 400 500 dIF/dt (A/μs) dIF/dt (A/μs) Fig. 8 - Typical Reverse Recovery Time vs. dIF/dt Fig. 11 - Typical Reverse Current vs. dIF/dt 35 1800 TJ = 25 °C TJ = 125 °C 1600 30 1400 30 A 50 A Irec (A) Qrr (nC) 200 1200 30 A 25 50 A 20 1000 15 A 15 15 A 800 10 600 0 100 200 300 400 500 dIF/dt (A/μs) Fig. 9 - Typical Stored Charge vs. dIF/dt 0 100 200 300 400 500 dIF/dt (A/μs) Fig. 12 - Typical Reverse Current vs. dIF/dt Revision: 19-Feb-2019 Document Number: 95927 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30EPU12L-N3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 13 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- 30 E P U 12 L -N3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (30 = 30 A) 3 - Circuit configuration: E = single diode 4 - P = TO-247 package 5 - 6 - Process type: U = ultrafast recovery Voltage rating (12 = 1200 V) 7 - L = long leads 8 - Environmental digit: -N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-30EPU12L-N3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95536 Part marking information www.vishay.com/doc?95648 Revision: 19-Feb-2019 Document Number: 95927 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000