VS-40TPS12L-M3

VS-40TPS12L-M3, VS-40TPS12AL-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 40 A FEATURES 2 (A) • Low IGT parts available • Designed and qualified JEDEC® - JESD 47 according to • Flexible solution for reliable AC power rectification 1 2 • Easy control peak current at charger power up to reduce passive / electromechanical components 3 1 (K) (G) 3 TO-247AD 3L • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS PRIMARY CHARACTERISTICS IT(AV) 35 A VDRM/VRRM 1200 V • Typical usage is in input rectification crowbar (soft start) and AC switch in motor control, UPS, welding and battery charge VTM 1.45 V IGT 150 mA TJ -40 °C to +125 °C Package TO-247AD 3L Circuit configuration Single SCR DESCRIPTION The VS-40TPS12.. high voltage series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. AEC-Q101 qualified P/N available (VS-40TPS12LHM3, VS-40TPS12ALHM3). MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS Sinusoidal waveform 35 55 IRMS VRRM/VDRM ITSM VT VALUES 40 A, TJ = 25 °C dv/dt di/dt UNITS A 1200 V 600 A 1.45 V 1000 V/μs 100 A/μs -40 to +125 °C VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM/IDRM AT 125 °C mA VS-40TPS12AL-M3 1200 1300 VS-40TPS12L-M3 1200 1300 TJ VOLTAGE RATINGS PART NUMBER 10 Revision: 31-Jul-2018 Document Number: 95993 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS12L-M3, VS-40TPS12AL-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum continuous RMS on-state current as AC switch Maximum peak, one-cycle  non-repetitive surge current SYMBOL IT(AV) TEST CONDITIONS VALUES UNITS TC = 79 °C, 180° conduction half sine wave 35 IT(RMS) ITSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t 55 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied Initial  TJ = TJ max. t = 0.1 ms to 10 ms, no voltage reapplied 600 1250 1760 17 600 Low level value of threshold voltage VT(TO)1 1.02 High level value of threshold voltage VT(TO)2 1.23 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 A 500 10 ms sine pulse, rated VRRM applied TJ = 125 °C 9.74 7.50 A2s A2s V m Maximum peak on-state voltage VTM 110 A, TJ = 25 °C 1.85 V Maximum rate of rise of turned-on current di/dt TJ = 25 °C 100 A/μs Maximum holding current IH Anode supply = 6 V, resistive load, initial TJ = 1 A, IT = 25 °C 300 Maximum latching current IL Anode supply = 6 V, resistive load, TJ = 25 °C 350 TJ = 25 °C 0.5 Maximum reverse and direct leakage current Maximum rate of rise of off-state voltage 40TPS12A Maximum rate of rise of off-state voltage 40TPS12 IRRM/IDRM TJ = 125 °C VR = rated VRRM/VDRM mA 10 500 dv/dt TJ = TJ maximum, linear to 80 % VDRM, Rg- k = 100  V/μs 1000 TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL TEST CONDITIONS PG(AV) 2.5 IGM 2.5 A -VGM 10 V VGT TJ = 25 °C TJ = 125 °C TJ = -40 °C Maximum required DC gate current to trigger UNITS 10 TJ = -40 °C Maximum required DC gate voltage to trigger VALUES PGM IGT TJ = 25 °C TJ = 125 °C Anode supply = 6 V resistive load Anode supply = 6 V resistive load TJ = 25 °C, for 40TPS12A Maximum DC gate voltage not to trigger for 40TPS12 VGD Maximum DC gate current not to trigger for 40TPS12 IGD Maximum DC gate voltage not to trigger for 40TPS12A VGD Maximum DC gate current not to trigger for 40TPS12A IGD W 2.0 1.7 V 1.3 200 150 80 mA 40 0.25 V 6 mA 0.15 V 1 mA TJ = 125 °C, VDRM = rated value TJ = 125 °C, VDRM = rated value Revision: 31-Jul-2018 Document Number: 95993 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS12L-M3, VS-40TPS12AL-M3 www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL VALUES UNITS TJ, TStg -40 to +125 °C Maximum thermal resistance, junction to case RthJC 0.6 Maximum thermal resistance, junction to ambient RthJA Maximum thermal resistance, case to heat sink RthCS Maximum junction and storage temperature range TEST CONDITIONS DC operation °C/W 40 Mounting surface, smooth and greased 0.25 6 Approximate weight Mounting torque g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Marking device 40TPS12AL Case style TO-247AD 3L 40TPS12L 130 40TPS.. Series R thJC (DC) = 0.6 °C/W 120 110 Conduction Angle 100 30° 60° 90° 90 120° 180° 80 70 0 10 20 30 40 Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (°C)  Conduction period 100 30° 60° 90° 120° 180° 80 DC 70 0 10 20 30 40 50 Average On-State Current (A) Fig. 2 - Current Rating Characteristics 60 Maximum Average On-State Power Loss (W) Maximum Allowable Case Temperature (°C) 110 90 40 RMS limit 30 20 Conduction angle 10 40TPS.. series TJ = 125 °C 0 0 5 10 15 20 25 30 35 40 Fig. 3 - On-State Power Loss Characteristics 40TPS.. series R thJC (DC) = 0.6 °C/W 120 180° 120° 90° 60° 30° 50 Average On-State Current (A) Average On-State Current (A) Fig. 1 - Current Rating Characteristics 130 60 80 DC 180° 120° 90° 60° 30° 70 60 50 40 RMS limit 30 Conduction period 20 40TPS.. series TJ = 125 °C 10 0 0 10 20 30 40 50 60 Average On-State Current (A) Fig. 4 - On-State Power Loss Characteristics Revision: 31-Jul-2018 Document Number: 95993 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS12L-M3, VS-40TPS12AL-M3 www.vishay.com Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 550 Vishay Semiconductors At any rated load condition and with rated VRRM applied following surge. Initial T J = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 500 450 400 350 300 40TPS.. series 250 1 10 600 550 500 450 400 350 300 40TPS.. series 250 0.01 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Maximum non repetitive surge current vs. pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) 100 10 TJ = 25 °C TJ = 125 °C 40TPS..A series 1 0.5 1 1.5 2 Instantaneous On-State Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω tr = 0.5 μs, tp ≥ 6 μs b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω tr = 1 μs, tp ≥ 6 μs 10 b) TJ = - 40 °C TJ = 50 °C 1 (1) PGM = 100 W, tp = 500 μs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 2.5 ms (4) PGM = 10 W, tp = 5 ms a) TJ = 125 °C Instantaneous Gate Voltage (V) 100 (4) (3) (2) (1) VGD IGD 0.1 0.001 0.01 40TPS..Series 0.1 Frequency limited by PG(AV) 1 10 100 1000 Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics Revision: 31-Jul-2018 Document Number: 95993 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS12L-M3, VS-40TPS12AL-M3 www.vishay.com Vishay Semiconductors Instantaneous Gate Voltage (V) 100 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω tr = 0.5 μs, tp ≥ 6 μs b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω tr = 1 μs, tp ≥ 6 μs (1) PGM = 100 W, tp = 500 μs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 2.5 ms (4) PGM = 10 W, tp = 5 ms 10 40TPS..A series 0.1 0.0001 TJ = - 40 °C VGD TJ = 25 °C TJ = 125 °C 1 (4) b) (2) (1) a) Frequency limited by PG(AV) IGD 0.001 (3) 0.01 0.1 1 10 100 1000 Transient Thermal Impedance ZthJC (°C/W) Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics 1 0.1 Steady state value (DC operation) D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 40TPS.. series 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJC Characteristics Revision: 31-Jul-2018 Document Number: 95993 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40TPS12L-M3, VS-40TPS12AL-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE VS- Device code 1 40 T P S 12 A L -M3 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (40 = 40 A) 3 - Circuit configuration: 4 - T = thyristor Package: P = TO-247 5 - Type of silicon: S = standard recovery rectifier 6 - 7 - Voltage ratings 12 = 1200 V A = Low Igt selection 40 mA maximum None = standard Igt selection 8 - 9 - L = long leads Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-40TPS12AL-M3 25 500 Antistatic plastic tubes VS-40TPS12L-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions TO-247AD 3L www.vishay.com/doc?95626 Part marking information TO-247AD 3L www.vishay.com/doc?95007 Revision: 31-Jul-2018 Document Number: 95993 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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