VS-6EVX06-M3/I

VS-6EVX06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 6 A FRED Pt® FEATURES eSMP® Series • Hyperfast recovery time, reduced Qrr recovery Heatsink • For PFC CCM operation k • Low forward voltage drop, low power losses k • Low leakage current 1 2 1 Pin 1 2 Pin 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Meets JESD 201 class 2 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 SlimDPAK (TO-252AE) LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D 3D These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters, or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. 3D Models PRIMARY CHARACTERISTICS IF(AV) 6A VR 600 V MECHANICAL DATA Case: SlimDPAK (TO-252AE) VF at IF 1.26 V trr (typ.) 14 ns TJ max. 175 °C Package SlimDPAK (TO-252AE) Circuit configuration Single Molding compound meets UL 94 V-0 flammability rating Base PN/-M3 - halogen-free, RoHS-compliant Terminals: J-STD-002 matte tin plated leads, solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 140 °C 6 Non-repetitive peak surge current IFSM TJ = 25 °C, 10 ms sine pulse wave 50 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 6 A - 2.5 3.10 1.90 IR = 100 μA IF = 6 A, TJ = 150 °C - 1.65 VR = VR rated - - 5 TJ = 150 °C, VR = VR rated - - 250 VR = 600 V - 10 - UNITS V μA pF Revision: 12-Jan-2021 Document Number: 96147 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EVX06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge Qrr MIN. TYP. MAX. IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V TEST CONDITIONS - 16 - IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 14 - IF = 0.5 A, IR = 1 A, IRR = 0.25 A - - 18 TJ = 25 °C - 19 - TJ = 125 °C - 40 - IF = 6 A dIF/dt = 500 A/μs VR = 400 V TJ = 25 °C TJ = 125 °C - 3.8 - - 6.3 - UNITS ns A TJ = 25 °C - 40 - TJ = 125 °C - 140 - MIN. TYP. MAX. UNITS -55 - 175 °C - - 2.5 °C/W nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ, TStg Thermal resistance, junction to mount RthJM Marking device Case style SlimDPAK (TO-252AE) 100 TJ = 175 °C 10 TJ = 150 °C 1 TJ = 25 °C TJ = -40 °C 0.1 6EVX06 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) TEST CONDITIONS 175 °C 100 10 150 °C 1 0.1 25 °C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 12-Jan-2021 Document Number: 96147 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EVX06-M3 www.vishay.com Vishay Semiconductors CT - Junction Capacitance (pF) 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 PDM t2 Single pulse (thermal resistance) Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC DC 0.01 0.0001 0.001 t1 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 20 RMS limit 170 Average Power Loss (W) Allowable Case Temperature (°C) 180 160 150 140 DC Square wave (D = 0.50) 80 % rated VR applied 130 15 10 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 5 See note (1) 120 0 0 2 4 6 8 10 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 0 1 2 3 4 5 6 7 8 9 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR Revision: 12-Jan-2021 Document Number: 96147 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EVX06-M3 www.vishay.com Vishay Semiconductors 200 120 180 100 160 140 Qrr (nC) trr (ns) 80 125 °C 60 125 °C 120 100 80 60 40 25 °C 40 25 °C 20 20 0 100 200 300 400 100 500 200 300 400 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt 500 (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 12-Jan-2021 Document Number: 96147 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-6EVX06-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 6 E V X 06 -M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (6 = 6 A) 3 - Circuit configuration: E = single die 4 - V = SlimDPAK 5 - Process type: X = hyperfast recovery 6 - Voltage code (06 = 600 V) 7 - Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY PACKAGING DESCRIPTION 0.20 I 4500 13"diameter plastic tape and reel VS-6EVX06-M3/I LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96081 Part marking information www.vishay.com/doc?96085 Packaging information www.vishay.com/doc?88869 Revision: 12-Jan-2021 Document Number: 96147 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SlimDPAK DIMENSIONS in inches (millimeters) SlimDPAK 0.055 (1.40) 0.047 (1.20) 0.249 (6.32) 0.239 (6.08) 0.016 (0.41) 0.010 (0.25) 0.028 (0.70) 0.012 (0.30) 0.265 (6.72) 0.255 (6.48) 0.370 (9.40) 0.339 (8.60) 0.008 0.000 0.055 0.039 0.090 NOM. (2.29) (0.20) (0.00) (1.40) (1.00) 0.180 NOM. (4.57) Mounting Pad Layout 0.240 MIN. (6.10) 0.224 (5.70) 0.209 (5.30) 0.205 NOM. (5.20) 0.235 MIN. (5.97) 0.386 REF. (9.80) 0.075 MIN. (1.90) 0.035 (0.90) 0.028 (0.70) 0.090 NOM. (2.29) 0.055 MIN. (1.40) Revision: 14-Mar-17 Document Number: 96081 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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