VS-8EWF12SLHM3

VS-8EWF12SLHM3 www.vishay.com Vishay Semiconductors Surface Mount Fast Soft Recovery Rectifier Diode, 8 A FEATURES • Glass passivated pellet chip junction Base cathode + 2 • Meets MSL level 1, per LF maximum peak of 260 °C J-STD-020, • AEC-Q101 qualified 2 • Meets JESD 201 class 2 whisker test 3 1 DPAK (TO-252AA) 1 Anode - • Flexible solution for reliable AC power rectification 3 - Anode • High surge, low VF rugged blocking diode for DC charging stations • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 8A VR 1200 V VF at IF 1.3 V IFSM 150 A trr 80 ns TJ max. 150 °C APPLICATIONS • On-board and off-board EV / HEV battery chargers • Renewable energy inverters DESCRIPTION Package DPAK (TO-252AA) Circuit configuration Single Snap factor 0.6 The VS-8EWF12SLHM3 fast soft recovery rectifier series has been optimized for combined short reverse recovery time, low forward voltage drop and low leakage current. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 8 A Sinusoidal waveform VRRM 1200 V IFSM 150 A VF 8 A, TJ = 25 °C 1.3 V trr 1 A, 100 A/μs 80 ns TJ Range -40 to +150 °C VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA 1200 1300 4 VOLTAGE RATINGS PART NUMBER VS-8EWF12SLHM3 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS TC = 96 °C, 180° conduction half sine wave VALUES UNITS 8 10 ms sine pulse, rated VRRM applied 125 10 ms sine pulse, no voltage reapplied 150 10 ms sine pulse, rated VRRM applied 78 10 ms sine pulse, no voltage reapplied 110 t = 0.1 ms to 10 ms, no voltage reapplied 1100 A A2s A2s Revision: 06-Feb-18 Document Number: 96490 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF12SLHM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current TEST CONDITIONS VALUES 8 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C IRM V 25.6 m 0.93 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS 1.3 mA 4 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 8 Apk 25 A/μs TJ = 25 °C S VALUES UNITS 270 ns 4.2 A 1 μC IFM trr ta tb t di dt Qrr 0.6 Irr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC VALUES UNITS -40 to +150 °C DC operation 2.5 °C/W Typical thermal resistance, junction to ambient (PCB mount) RthJA (1) 50 Approximate weight Marking device 1 g 0.03 oz. Case style DPAK (TO-252AA) 8EWF12SH 150 RthJC (DC) = 2.5 °C/W 140 130 120 Ø Conduction angle 110 100 90 30° 80 120° 60° 70 90° 180° 60 0 1 2 3 4 5 6 7 8 Average Forward Current (A) Fig. 1 - Current Rating Characteristics 9 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W 150 RthJC (DC) = 2.5 °C/W 140 130 120 110 Ø 100 Conduction period 90 30° 60° 80 90° 70 120° DC 180° 60 0 2 4 6 8 10 12 14 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Revision: 06-Feb-18 Document Number: 96490 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF12SLHM3 180° 120° 90° 60° 30° 10 8 RMS limit 6 Ø 4 Conduction angle 2 TJ = 150 °C 0 0 1 2 3 4 5 6 7 8 9 Peak Half Sine Wave Forward Current (A) 12 Vishay Semiconductors 170 Maximum non-repetitive surge current vs. pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 150 130 110 90 70 50 30 10 0.01 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) 18 DC 180° 120° 90° 60° 30° 16 14 12 RMS limit 10 8 6 Ø Conduction period 4 TJ = 150 °C 2 0 0 2 4 6 8 10 12 14 1000 TJ = 25 °C TJ = 150 °C 100 10 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Average Forward Current (A) Instantaneous Forward Voltage (V) Fig. 4 - Forward Power Loss Characteristics Fig. 7 - Forward Voltage Drop Characteristics 140 At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 130 120 110 100 90 80 70 60 50 40 30 1 10 100 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current trr - Typical Reverse Recovery Time (µs) Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Maximum Average Forward Power Loss (W) www.vishay.com 0.6 TJ = 25 °C 0.5 IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 0.4 0.3 0.2 0.1 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Revision: 06-Feb-18 Document Number: 96490 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF12SLHM3 Vishay Semiconductors Qrr - Typical Reverse Recovery Charge (µC) trr - Typical Reverse Recovery Time (µs) www.vishay.com 0.8 TJ = 150 °C IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 0.6 0.4 0.2 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Irr - Typical Reverse Recovery Current (A) TJ = 25 °C IFM = 10 A 1.6 IFM = 8 A 1.2 IFM = 5 A 0.8 IFM = 2 A 0.4 IFM = 1 A 0 0 40 80 120 160 TJ = 150 °C 4 IFM = 10 A 3 IFM = 8 A IFM = 5 A 2 IFM = 2 A 1 IFM = 1 A 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C 2.0 200 20 TJ = 25 °C IFM = 10 A 16 IFM = 8 A 12 IFM = 5 A IFM = 2 A 8 IFM = 1 A 4 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Irr - Typical Reverse Recovery Current (A) Qrr - Typical Reverse Recovery Charge (µC) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C 5 25 TJ = 150 °C 20 IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A 15 10 5 0 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C Revision: 06-Feb-18 Document Number: 96490 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWF12SLHM3 ZthJC - Transient Thermal Impedance (°C/W) www.vishay.com Vishay Semiconductors 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 8 E W F 12 S L H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = single 4 - Package: W = DPAK (TO-252AA) 5 - Type of silicon: F = fast soft recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - L = tape and reel (left oriented), for different orientation contact factory 9 - H = AEC-Q101 qualified 10 - Environmental digit: 12 = 1200 V M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8EWF12SLHM3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?96495 Revision: 06-Feb-18 Document Number: 96490 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DPAK (TO-252AA) DIMENSIONS in millimeters and inches Pad layout E A 0.265 (6.74) min. b3 E1 c2 L3 4 4 Seating plane D 1 2 L5 0.245 (6.23) min. H L4 3 D1 3 1 2 0.488 (12.40) 0.409 (10.40) Detail “C” b2 0.089 (2.28) min. c b e L1 e1 Lead tip 0.06 (1.524) min. Detail “C” Gauge plane L2 0.093 (2.38) 0.085 (2.18) A1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 3 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 5 D1 5.21 - 0.205 - 3 E 6.35 6.73 0.250 0.265 5 E1 4.32 - 0.170 - 3 2.74 BSC L2 L3 c2 2.29 BSC INCHES MIN. 0.51 BSC 0.89 1.27 NOTES 0.090 BSC 0.108 REF. 0.020 BSC 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (5) Outline conforms to JEDEC® outline TO-252AA Revision: 06-Jun-17 Document Number: 95519 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 09-Jul-2021 1 Document Number: 91000