VS-8EWH06FNHM3

VS-8EWH06FNHM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES 4 • Hyper fast recovery time, reduced Qrr and soft recovery 2, 4 • 175 °C maximum operating junction temperature 2 • For PFC CRM/CCM operation 3 1 DPAK (TO-252AA) 1 N/C • Low forward voltage drop 3 Anode • Low leakage current • AEC-Q101 qualified • Meets JESD 201 class 2 whisker test • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRIMARY CHARACTERISTICS • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 IF(AV) 8A VR 600 V DESCRIPTION / APPLICATIONS VF at IF 1.3 V State of the art hyper fast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. trr (typ.) 18 ns TJ max. 175 °C Package DPAK (TO-252AA) Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 143 °C Non-repetitive peak surge current IFSM TJ = 25 °C 90 Peak repetitive forward current IFM TC = 143 °C, f = 20 kHz, d = 50 % 16 Operating junction and storage temperatures TJ, TStg 8 A -65 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 8 A - 2.0 2.4 IF = 8 A, TJ = 150 °C - 1.3 1.8 VR = VR rated - - 50 TJ = 150 °C, VR = VR rated - - 500 IR = 100 μA UNITS V Forward voltage VF Reverse leakage current IR Junction capacitance CT VR = 600 V - 8 - pF Series inductance LS Measured lead to lead 5 mm from package body - 8 - nH μA Revision: 11-Apr-18 Document Number: 94739 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWH06FNHM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V - 18 22 TJ = 25 °C - 25 - - 34 - - 3.3 - - 4.8 - TJ = 25 °C - 39 - TJ = 125 °C - 90 - MIN. TYP. MAX. UNITS TJ, TStg -65 - 175 °C RthJC - 1.8 2.2 °C/W IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr TJ = 125 °C Peak recovery current Reverse recovery charge IRRM Qrr TJ = 25 °C TJ = 125 °C IF = 8 A dIF/dt = 200 A/μs VR = 390 V MAX. UNITS 21 ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg SYMBOL TEST CONDITIONS Approximate weight Marking device Case style DPAK (TO-252AA) 0.3 g 0.01 oz. 8EWH06FNH Revision: 11-Apr-18 Document Number: 94739 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWH06FNHM3 Vishay Semiconductors 100 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 175 °C 10 1 TJ = 125 °C TJ = 25 °C 100 TJ = 175 °C TJ = 150 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C TJ = 25 °C 0.01 0.001 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 100 200 300 400 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage C - Junction Capacitance (pF) 100 10 1 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 D = 0.5 1 D = 0.2 D = 0.1 D = 0.05 0.1 D = 0.02 D = 0.01 0.01 1E-05 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 11-Apr-18 Document Number: 94739 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWH06FNHM3 Vishay Semiconductors 180 50 170 45 150 DC 140 Square wave (D = 0.50) rated VR applied 130 35 30 8 A, TJ = 25 °C 25 20 120 15 see note (1) 10 110 0 2 4 6 8 10 12 14 100 1000 IF(AV) - Average Forward Current (A) dIFdt (A/μs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 350 20 18 RMS Limit 300 16 250 14 12 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 10 8 6 4 Qrr (nC) IF - Average Power Loss (W) 8 A, TJ = 125 °C 40 160 trr (nC) Allowable Case Temperature (°C) www.vishay.com DC 4 8 A, TJ = 25 °C 50 0 2 8 A, TJ = 125 °C 150 100 2 0 200 6 8 10 12 0 100 1000 IF(AV) - Average Forward Current (A) dIFdt (A/μs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR (1) Revision: 11-Apr-18 Document Number: 94739 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWH06FNHM3 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 11-Apr-18 Document Number: 94739 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWH06FNHM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 E W H 06 FN TRL H M3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = single diode 4 - Package identifier: W = D-PAK 5 - H = hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - FN = TO-252AA 8 - None = tube TR = tape and reel TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - H = AEC-Q101 qualified 10 - Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8EWH06FNHM3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 75 3000 Antistatic plastic tube VS-8EWH06FNTRHM3 2000 2000 13" diameter reel VS-8EWH06FNTRRHM3 3000 3000 13" diameter reel VS-8EWH06FNTRLHM3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95519 Part marking information www.vishay.com/doc?95518 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?96114 Revision: 11-Apr-18 Document Number: 94739 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors DPAK (TO-252AA) DIMENSIONS in millimeters and inches Pad layout E A 0.265 (6.74) min. b3 E1 c2 L3 4 4 Seating plane D 1 2 L5 0.245 (6.23) min. H L4 3 D1 3 1 2 0.488 (12.40) 0.409 (10.40) Detail “C” b2 0.089 (2.28) min. c b e L1 e1 Lead tip 0.06 (1.524) min. Detail “C” Gauge plane L2 0.093 (2.38) 0.085 (2.18) A1 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 3 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 5 D1 5.21 - 0.205 - 3 E 6.35 6.73 0.250 0.265 5 E1 4.32 - 0.170 - 3 2.74 BSC L2 L3 c2 2.29 BSC INCHES MIN. 0.51 BSC 0.89 1.27 NOTES 0.090 BSC 0.108 REF. 0.020 BSC 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (5) Outline conforms to JEDEC® outline TO-252AA Revision: 06-Jun-17 Document Number: 95519 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Vishay: VS-8EWH06FNHM3 VS-8EWH06FNTRHM3 VS-8EWH06FNTRRHM3 VS-8EWH06FNTRLHM3