VS-C4PU3006LHN3
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Vishay Semiconductors
Ultrafast Soft Recovery Diode,
2 x 15 A FRED Pt® Gen 4
FEATURES
Base
common
cathode
2
• Gen 4 FRED Pt® technology
• Low IRRM and reverse recovery charge
• Very low forward voltage drop
• Polyimide passivated chip for high reliability
standard
1
• 175 °C operating junction temperature
2
3
TO-247AD 3L
• AEC-Q101 qualified, meets JESD 201 class 2
whisker test
1
3
Anode
Anode
2
1
2
Common
cathode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRODUCT SUMMARY
DESCRIPTION
Package
TO-247AD 3L
IF(AV)
2 x 15 A
VR
600 V
VF at IF
1.12 V
trr typ.
See Recovery table
TJ max.
175 °C
Diode variation
Single die
Gen 4 Fred technology, state of the art, ultralow VF, soft
switching optimized for Discontinuous (Critical) Mode (DCM)
and IGBT F/W diode.
The minimized conduction loss, optimized stored charge
and low recovery current minimize the switching losses and
reduce power dissipation in the switching element and
snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 146 °C
15
Non-repetitive peak surge current, per leg
IFSM
TC = 25 °C, tp = 8.3 ms, half sine wave
200
Operating junction and storage temperature
TJ, TStg
A
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage, blocking voltage
Forward voltage
SYMBOL
VBR, VR
VF
Reverse leakage current
IR
Junction capacitance
CT
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 15 A
-
1.32
1.55
IF = 30 A
-
1.53
-
IF = 15 A, TJ = 125 °C
-
1.17
-
IF = 30 A, TJ = 125 °C
-
1.42
-
IF = 15 A, TJ = 150 °C
-
1.12
1.28
IR = 100 μA
IF = 30 A, TJ = 150 °C
-
1.38
-
VR = VR rated
-
-
15
TJ = 125 °C, VR = VR rated
-
-
500
VR = 600 V
-
16
-
UNITS
V
μA
pF
Revision: 21-Feb-17
Document Number: 95937
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-C4PU3006LHN3
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Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
Reverse recovery time
trr
Peak recovery current
IRRM
Reverse recovery charge
MIN.
TYP.
MAX.
TJ = 25 °C
TEST CONDITIONS
-
60
-
TJ = 125 °C
-
83
-
-
13
-
-
21
-
-
500
-
-
1100
-
IF = 15 A
TJ = 25 °C
dIF/dt = 1000 A/μs
TJ = 125 °C
VR = 400 V
TJ = 25 °C
Qrr
TJ = 125 °C
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
MIN.
TYP.
MAX.
UNITS
Thermal resistance, junction to case
SYMBOL
RthJC
TEST CONDITIONS
-
-
1.4
°C/W
Thermal resistance, case to heat sink
RthCS
-
0.4
-
-
6.0
-
g
-
0.21
-
oz.
6.0
(5)
-
12
(10)
kgf · cm
(lbf · in)
Weight
Mounting torque
Case style TO-247AD 3L
1000
C4PU3006LH
1000
175 °C
IR - Reverse Current (μA)
IF - Instantaneous Forward Current (A)
Marking device
100
TJ = 175 °C
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
100
150 °C
125 °C
10
1
25 °C
0.1
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
200
VF - Forward Voltage Drop (V)
400
600
VR - Reverse Voltage (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
1000
100
10
0
100
200
300
400
500
600
VR - Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Revision: 21-Feb-17
Document Number: 95937
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-C4PU3006LHN3
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Vishay Semiconductors
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
0.50
0.20
0.10
0.05
0.02
0.01
1
0.1
Single pulse
0.01
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
140
130
170
120
160
110
125 °C
trr (ns)
Allowable Case Temperature (°C)
180
DC
150
140
100
90
25 °C
80
Square wave (D = 0.50)
80 % rated VR applied
130
70
60
See note (1)
120
50
0
5
10
15
20
400
25
500
600
700
800
900
1000
IF(AV) - Average Forward Current (A)
dIF/dt (A/μs)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
1200
30
25
1000
125 °C
20
800
15
Qrr (nC)
Average Power Loss (W)
RMS limit
D = 0.01
D = 0.05
D = 0.10
D = 0.20
D = 0.50
10
5
600
25 °C
400
200
0
0
4
8
12
16
20
24
IF(AV) - Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
400
500
600
700
800
900
1000
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Note
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see Fig.5)
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR = rated VR
(1)
Revision: 21-Feb-17
Document Number: 95937
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-C4PU3006LHN3
www.vishay.com
Vishay Semiconductors
22
20
125 °C
18
Irec (A)
16
14
25 °C
12
10
8
6
400
500
600
700
800
900
1000
dIF/dt (A/μs)
Fig. 9 - Typical Reverse Current vs. dIF/dt
ORDERING INFORMATION TABLE
Device code
VS-
C
4
P
U
30
06
L
H
N3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semiconductors product
2
-
Circuit configuration:
C = common diode
3
-
FRED Pt Gen 4
4
-
P = TO-247 package
5
-
Process type:
U = ultrafast recovery
6
-
Current rating (30 = 2 x 15 A)
7
-
Voltage rating (06 = 600 V)
8
-
Package: L = long lead
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-C4PU3006LHN3
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
TO-247AD 3L
www.vishay.com/doc?95626
Part marking information
TO-247AD 3L
www.vishay.com/doc?95007
Revision: 21-Feb-17
Document Number: 95937
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-247AD 3L
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Φ P
E
B
(2) R/2
A2
S
(Datum B)
Ø K M DBM
Φ P1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
(4)
E1
A
0.01 M D B M
View A - A
See view B
2 x b2
3xb
C
2x e
b4
A1
0.10 M C A M
(b1, b3, b5)
Plating
Base metal
D DE
(c)
c1
E
C
C
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.34
2.59
3.43
2.59
3.38
0.38
0.89
0.38
0.84
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.092
0.102
0.135
0.102
0.133
0.015
0.035
0.015
0.033
0.776
0.815
0.515
-
View B
NOTES
3
4
SYMBOL
D2
E
E1
e
ØK
L
L1
ØP
Ø P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.46
5.46 BSC
0.254
19.81
20.32
3.71
4.29
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.53
0.215 BSC
0.010
0.780
0.800
0.146
0.169
0.14
0.144
0.275
0.209
0.224
0.178
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4
Revision: 06-Mar-2020
Document Number: 95626
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 09-Jul-2021
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Document Number: 91000