VS-E4PU3006LHN3

VS-E4PU3006LHN3 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 30 A FRED Pt® Gen 4 FEATURES Base cathode • Gen 4 FRED Pt® technology 2 • Low IRRM and reverse recovery charge • Very low forward voltage drop 2 • Polyimide passivated chip for high reliability standard 1 3 TO-247AD 2L 3 Anode 1 Cathode • 175 °C operating junction temperature • AEC-Q101 qualified, meets JESD 201 class 1 whisker test • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY Package TO-247AD 2L IF(AV) 30 A VR 600 V DESCRIPTION VF at IF 1.19 V trr typ. see Recovery table TJ max. 175 °C Diode variation Single die Gen 4 Fred technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Peak repetitive reverse voltage VRRM Average rectified forward current IF(AV) TC = 131 °C 30 Non-repetitive peak surge current IFSM TC = 25 °C, tp = 8.3 ms half sine wave 240 Operating junction and storage temperature TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 600 - - IF = 30 A - 1.36 1.6 IF = 60 A - 1.6 - IF = 30 A, TJ = 125 °C - 1.23 - IF = 60 A, TJ = 125 °C - 1.5 - IF = 30 A, TJ = 150 °C - 1.19 1.35 IF = 60 A, TJ = 150 °C - 1.48 - VR = VR rated - - 50 TJ = 125 °C, VR = VR rated - - 500 VR = 600 V - 18.3 - UNITS V μA pF Revision: 19-Jan-17 Document Number: 95929 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4PU3006LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr Peak recovery current IRRM Reverse recovery charge MIN. TYP. MAX. TJ = 25 °C TEST CONDITIONS - 65 - TJ = 125 °C - 90 - - 18 - - 32 - - 850 - - 1850 - IF = 30 A TJ = 25 °C dIF/dt = 1000 A/μs TJ = 125 °C VR = 400 V TJ = 25 °C Qrr TJ = 125 °C UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS Thermal resistance, junction to case SYMBOL RthJC TEST CONDITIONS - - 1 °C/W Thermal resistance, case to heatsink RthCS - 0.4 - - 6.0 - g - 0.21 - oz. 6.0 (5) - 12 (10) kgf · cm (lbf · in) Weight Mounting torque Case style TO-247AD 2L 1000 E4PU3006LH 1000 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 100 TJ = 175 °C 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 100 150 °C 125 °C 10 1 25 °C 0.1 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 VF - Forward Voltage Drop (V) 200 400 600 VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 19-Jan-17 Document Number: 95929 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4PU3006LHN3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 0.50 0.20 0.10 0.05 0.02 0.01 1 0.1 single pulse 0.01 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Max. Thermal Impedance ZthJC Characteristics 140 130 170 120 160 110 125 °C DC 150 trr (ns) Allowable Case Temperature (°C) 180 140 90 25 °C 80 130 Square wave (D = 0.50) 80 % rated VR applied 70 120 60 See note (1) 50 110 0 10 20 30 40 400 50 500 600 700 800 900 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 180 2000 160 125 °C 1800 RMS limit 140 1600 120 1400 100 Qrr (nC) Average Power Loss (W) 100 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 80 60 40 DC 1200 1000 25 °C 800 600 20 400 0 0 10 20 30 40 50 60 70 80 90 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics 400 500 600 700 800 900 1000 dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (P + P C J d dREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see Fig.5) PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR = rated VR Revision: 19-Jan-17 Document Number: 95929 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4PU3006LHN3 www.vishay.com Vishay Semiconductors 40 Irec (A) 30 125 °C 20 25 °C 10 0 400 500 600 700 800 900 1000 dIF/dt (A/μs) Fig. 9 - Typical Reverse Current vs. dIF/dt ORDERING INFORMATION TABLE Device code VS- E 4 P U 30 06 L H N3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Circuit configuration: E = single diode 3 - FRED Pt Gen 4 4 - P = TO-247 package 5 - Process type: U = ultrafast recovery 6 - Current rating (30 = 30 A) 7 - Voltage rating (06 = 600 V) 8 - Package: L = long lead 9 - H = AEC-Q 101 qualified 10 - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-E4PU3006LHN3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions TO-247AD 2L www.vishay.com/doc?95536 Part marking information TO-247AD 2L www.vishay.com/doc?95648 Revision: 19-Jan-17 Document Number: 95929 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q Revision: 20-Apr-17 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000