VS-CPU6006LHN3

VS-CPU6006LHN3 www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 2 x 30 A FRED Pt® FEATURES Base common cathode • Ultrafast recovery time • Low forward voltage drop 2 • 175 °C operating junction temperature • Designed and qualified commercial qualification 1 according to • AEC-Q101 qualified, meets JESD 201 class 1A whisker test 2 3 TO-247AD 3L 1 3 Anode Anode 2 1 2 Common cathode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTIONS / APPLICATIONS VS-CPU60... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VR 600 V VF at IF 1.75 V trr typ. 26 ns TJ max. 175 °C Package TO-247AD 3L Circuit configuration Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 600 V Repetitive peak reverse voltage VRRM Average rectified forward current per leg IF(AV) TC = 131 °C 30 Non-repetitive peak surge current per leg IFSM TC = 25 °C, tp = 8.3 ms half sine wave; connecting two anode pins 250 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR Forward voltage VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS MIN. TYP. MAX. 600 - - IF = 30 A - 1.4 1.75 IF = 30 A, TJ = 150 °C - 1.1 1.4 VR = VR rated - 0.02 30 TJ = 150 °C, VR = VR rated - 30 200 VR = 600 V - 20 - IR = 100 μA UNITS V μA pF Revision: 12-Nov-2018 Document Number: 95951 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-CPU6006LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time Peak recovery current trr IRRM MIN. TYP. MAX. - 26 - TJ = 25 °C - 42 - TJ = 125 °C - 100 - TJ = 25 °C TJ = 125 °C IF = 30 A dIF/dt = -200 A/μs VR = 200 V - 5 - - 10 - UNITS ns A TJ = 25 °C - 125 - TJ = 125 °C - 580 - MIN. TYP. MAX. UNITS TJ, TStg -55 - 175 °C Thermal resistance, junction to case per leg RthJC - 0.7 1 Thermal resistance, junction to ambient per leg RthJA Typical socket mount - - 70 Thermal resistance,  case to heat sink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 6.0 - - 0.21 - oz. - 12 (10) kgf cm (lbf in) Reverse recovery charge Qrr nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range SYMBOL TEST CONDITIONS Weight 6.0 (5.0) Mounting torque Marking device Case style TO-247AD 3L °C/W g CPU6006LH Revision: 12-Nov-2018 Document Number: 95951 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-CPU6006LHN3 Vishay Semiconductors 1000 1000 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com 100 TJ = 175 °C 10 TJ = 150 °C TJ = 25 °C 1 0.0 175 °C 100 150 °C 10 125 °C 100 °C 1 75 °C 0.1 50 °C 25 °C 0.01 0.001 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 D = 0.5 0.1 0.01 1E-05 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) 1E-04 1E-03 1E-02 1E-01 1E+00 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 12-Nov-2018 Document Number: 95951 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-CPU6006LHN3 www.vishay.com Vishay Semiconductors 140 170 120 160 150 IF = 30 A, 125 °C 100 140 trr (ns) Allowable Case Temperature (°C) 180 DC 130 120 80 60 110 Square wave (d = 0.5) rated VR applied 100 40 90 IF = 30 A, 25 °C Typical value 20 100 80 0 10 20 30 40 50 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 60 1800 50 1400 1200 40 Qrr (nC) Average Power Loss (W) Typical value 1600 RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 30 20 10 IF = 30 A, 125 °C 1000 800 600 400 IF = 30 A, 25 °C 200 0 0 0 10 20 30 40 50 100 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/µs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR (1) Revision: 12-Nov-2018 Document Number: 95951 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-CPU6006LHN3 www.vishay.com Vishay Semiconductors (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM di(rec)M/dt (5) 0.75 IRRM (1) diF/dt (4) Qrr - area under curve defined by trr and IRRM (1) diF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current Qrr = (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. trr x IRRM 2 (5) di(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions ORDERING INFORMATION TABLE Device code VS- C P U 60 06 L H N3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Circuit configuration: 3 - P = TO-247 4 - U = ultrafast recovery time 5 - Current code (60 = 2 x 30 A) 6 - Voltage code (06 = 600 V) 7 - L = long lead 8 - H = AEC-Q101 qualified 9 - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free C = common cathode ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-CPU6006LHN3 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions TO-247AD 3L www.vishay.com/doc?95626 Part marking information TO-247AD 3L www.vishay.com/doc?95007 Revision: 12-Nov-2018 Document Number: 95951 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 3L DIMENSIONS in millimeters and inches A A (3) (6) Φ P E B (2) R/2 A2 S (Datum B) Ø K M DBM Φ P1 A D2 Q 2xR (2) D1 (4) D 1 4 D 3 2 Thermal pad (5) L1 C L (4) E1 A 0.01 M D B M View A - A See view B 2 x b2 3xb C 2x e b4 A1 0.10 M C A M (b1, b3, b5) Plating Base metal D DE (c) c1 E C C (b, b2, b4) (4) Section C - C, D - D, E - E SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - View B NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.46 5.46 BSC 0.254 19.81 20.32 3.71 4.29 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.53 0.215 BSC 0.010 0.780 0.800 0.146 0.169 0.14 0.144 0.275 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 06-Mar-2020 Document Number: 95626 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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