VS-E4PH6006LHN3

VS-E4PH6006LHN3 www.vishay.com Vishay Semiconductors Hyperfast Soft Recovery Diode, 60 A FRED Pt® Gen 4 FEATURES Base cathode • Gen 4 FRED Pt® technology 2 • Low IRRM and reverse recovery charge • Very low forward voltage drop 2 • Polyimide passivated chip for high reliability standard 1 3 TO-247AD 2L 3 Anode 1 Cathode • 175 °C operating junction temperature • AEC-Q101 qualified, meets JESD 201 class 1 whisker test PRODUCT SUMMARY Package TO-247AD 2L IF(AV) 60 A VR 600 V VF at IF 1.48 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION trr typ. see Recovery table TJ max. 175 °C Diode variation Single die Gen 4 Fred technology, state of the art, ultralow VF, soft switching optimized for Discontinuous (Critical) Mode (DCM) and IGBT F/W diode. The minimized conduction loss, optimized stored charge and low recovery current minimized the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage SYMBOL TEST CONDITIONS MAX. UNITS 600 V VR Average rectified forward current IF(AV) TC = 106 °C 60 Single pulse forward current IFSM TC = 25 °C, tp = 8.3 ms, half sine wave 425 Operating junction and storage temperatures TJ, TStg A -55 to +175 °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF Reverse leakage current IR Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 600 - - IF = 50 A - 1.68 - IF = 60 A - 1.75 2.0 IF = 50 A, TJ = 125 °C - 1.44 - IF = 60 A, TJ = 125 °C - 1.55 - IF = 50 A, TJ = 150 °C - 1.39 - IF = 60 A, TJ = 150 °C - 1.48 1.65 VR = VR rated - - 50 TJ = 125 °C, VR = VR rated - - 500 VR = 600 V - 30 - UNITS V μA pF Revision: 23-Feb-18 Document Number: 95943 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4PH6006LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time TEST CONDITIONS trr Peak recovery current TJ = 125 °C TYP. MAX. - 68 - - 92 - - 20 - - 40 - - 945 - - 2500 - MIN. TYP. MAX. UNITS - - 0.6 °C/W - 0.25 - - 6.0 - g - 0.21 - oz. 6.0 (5) - 12 (20) kgf · cm (lbf · in) IF = 60 A TJ = 25 °C IRRM Reverse recovery charge MIN. TJ = 25 °C dIF/dt = 1000 A/μs TJ = 125 °C VR = 400 V TJ = 25 °C Qrr TJ = 125 °C UNITS ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, case to heat sink RthCS TEST CONDITIONS Mounting surface, flat, smooth and greased Weight Mounting torque Case style TO-247AD 2L 1000 E4PH6006LH 1000 IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) Marking device 100 TJ = 175 °C 10 TJ = 150°C TJ = 125°C TJ = 25 °C 1 175 °C 100 150 °C 10 125 °C 1 0.1 25 °C 0.01 0.001 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 200 VF - Forward Voltage Drop (V) 400 600 VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 23-Feb-18 Document Number: 95943 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4PH6006LHN3 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 10 0.50 0.20 0.10 0.05 0.02 0.01 1 0.1 single pulse 0.01 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 130 120 160 110 120 90 80 25 °C 70 DC Square wave (D = 0.50) 80% rated VR applied 100 60 80 50 0 20 40 60 80 100 400 500 600 700 800 900 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 5 - Max. Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 3000 180 150 2500 RMS limit 125 °C 2000 120 90 Qrr (nC) Average Power Loss (W) 125 °C 100 140 trr (ns) Allowable Case Temperature (°C) 180 D = 0.01 D = 0.05 D = 0.10 D = 0.20 D = 0.50 60 30 1500 1000 25 °C 500 0 0 0 10 20 30 40 50 60 70 80 90 400 500 600 700 800 900 1000 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see Fig.5) PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR = rated VR (1) Revision: 23-Feb-18 Document Number: 95943 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-E4PH6006LHN3 www.vishay.com Vishay Semiconductors 50 45 40 35 125 °C Irec (A) 30 25 20 25 °C 15 10 5 0 400 500 600 700 800 900 1000 dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery vs. dIF/dt ORDERING INFORMATION TABLE Device code VS- E 4 P H 60 06 L H N3 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 - Circuit configuration: E = single diode 2 pins 3 - FRED Gen 4 4 - P = TO-247 package 5 - Process type: H = Hyperfast recovery 6 - Current rating (60 = 60 A) 7 - Voltage rating (06 = 600 V) 8 - L = long lead 9 - H = AEC-Q101 qualified 10 - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-E4PH6006LHN3 QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions TO-247AD 2L www.vishay.com/doc?95536 Part marking information TO-247AD 2L www.vishay.com/doc?95648 Revision: 23-Feb-18 Document Number: 95943 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AD 2L DIMENSIONS in millimeters and inches A A (3) (6) F P E B (2) R/2 A2 S (Datum B) Ø K M D BM F P1 A D2 Q 2xR (2) D1 (4) D 1, 2 4 D 3 Thermal pad (5) L1 C L See view B (4) E1 A 0.01 M D B M View A - A C 2 x b2 2xb 2x e A1 0.10 M C A M (b1, b3) Plating Base metal D D (c) c1 C C (b, b2) (4) Section C - C, D - D SYMBOL MILLIMETERS View B INCHES MIN. MAX. MIN. MAX. A 4.65 5.31 0.183 0.209 A1 2.21 2.59 0.087 0.102 NOTES SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. E 15.29 15.87 0.602 0.625 E1 13.46 - 0.53 - A2 1.50 2.49 0.059 0.098 e 5.46 BSC b 0.99 1.40 0.039 0.055 ØK 0.254 b1 0.99 1.35 0.039 0.053 L 19.81 20.32 0.780 0.800 b2 1.65 2.39 0.065 0.094 L1 3.71 4.29 0.146 0.169 b3 1.65 2.34 0.065 0.092 ØP 3.56 3.66 0.14 0.144 c 0.38 0.89 0.015 0.035 Ø P1 - 6.98 - 0.275 NOTES 3 0.215 BSC 0.010 c1 0.38 0.84 0.015 0.033 Q 5.31 5.69 0.209 0.224 D 19.71 20.70 0.776 0.815 3 R 4.52 5.49 0.178 0.216 D1 13.08 - 0.515 - 4 S D2 0.51 1.35 0.020 0.053 5.51 BSC 0.217 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension A min., D, E min., Q min., S, and note 4 Revision: 28-May-2018 Document Number: 95536 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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