VS-GT100DA120UF
www.vishay.com
Vishay Semiconductors
Insulated Gate Bipolar Transistor
(Ultrafast IGBT), 100 A
FEATURES
• Trench IGBT high speed
• Square RBSOA
• HEXFRED® low Qrr, low switching energy
• Positive VCE(on) temperature coefficient
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
SOT-227
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VCES
1200 V
IC DC
100 A at 108 °C
VCE(on) typical at 100 A, 25 °C
1.93 V
Speed
8 kHz to 30 kHz
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting on heatsink
Package
SOT-227
Circuit configuration
Single switch with AP diode
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
SYMBOL
TEST CONDITIONS
VCES
IC
MAX.
UNITS
1200
V
TC = 25 °C
187
TC = 90 °C
123
ICM
240
Clamped inductive load current
ILM
250
Gate to emitter voltage
VGE
± 20
Diode continuous forward current
Single pulse forward current
IF
IFSM
Power dissipation, IGBT
PD
Power dissipation, diode
PD
Isolation voltage
VISOL
TC = 25 °C
97
TC = 90 °C
61
10 ms sine or 6 ms rectangular pulse, TJ = 25 °C
350
TC = 25 °C
890
TC = 90 °C
500
TC = 25 °C
429
TC = 90 °C
194
Any terminal to case, t = 1 min
2500
A
V
A
W
V
Revision: 10-Sep-2019
Document Number: 96079
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100DA120UF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate threshold voltage
SYMBOL
VBR(CES)
VCE(on)
VGE(th)
Temperature coefficient of threshold voltage VGE(th)/TJ
Collector to emitter leakage current
ICES
Forward voltage drop, diode
VFM
Gate to emitter leakage current
IGES
MIN.
TYP.
MAX.
VGE = 0 V, IC = 3.8 mA
TEST CONDITIONS
1200
-
-
VGE = 15 V, IC = 100 A
-
1.93
2.55
VGE = 15 V, IC = 100 A, TJ = 125 °C
-
2.26
-
VGE = 15 V, IC = 100 A, TJ = 150 °C
-
2.35
-
4.5
5.8
7.0
-
4.6
-
VCE = VGE, IC = 3.8 mA (25 °C to 125 °C)
-
-12
-
mV/°C
VGE = 0 V, VCE = 1200 V
-
1.0
100
μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
-
0.9
-
VGE = 0 V, VCE = 1200 V, TJ = 150 °C
-
3.4
-
VGE = 0 V, IF = 80 A
-
2.8
3.5
VGE = 0 V, IF = 80 A, TJ = 125 °C
-
3.0
-
VGE = 0 V, IF = 80 A, TJ = 150 °C
-
3.0
-
VGE = ± 20 V
-
-
± 220
nA
MIN.
TYP.
MAX.
UNITS
-
800
-
nC
VCE = VGE, IC = 3.8 mA
VCE = VGE, IC = 3.8 mA, TJ = 125 °C
UNITS
V
mA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
SYMBOL
Qg
Input capacitance
Cies
Reverse transfer capacitance
Cres
TEST CONDITIONS
VGE = -15 V, VGE = +15 V
VCE = 25 V, VGE = 0 Vf = 1 MHz
-
6150
-
-
345
-
Turn-on switching loss
Eon
-
2.2
-
Turn-off switching loss
Eoff
-
3.0
-
-
5.2
-
-
131
-
-
55
-
-
244
-
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
tr
td(off)
tf
-
118
-
2.9
-
-
5.3
-
-
8.2
-
-
147
-
-
61
-
-
358
-
tf
-
132
-
Eon
-
3.0
-
-
4.0
-
-
7.0
-
-
134
-
-
66
-
-
242
-
-
108
-
Turn-on switching loss
Eon
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Turn-off delay time
Fall time
Turn-on switching loss
tr
td(off)
Turn-off switching loss
Eoff
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Energy losses
include tail and
diode recovery
Diode used
HFA16PB120
-
Turn-off switching loss
Rise time
IC = 75 A,
VCC = 600 V,
VGE = 15 V,
Rg = 1.0
L = 500 μH,
TJ = 25 °C
tr
td(off)
tf
IC = 75 A,
VCC = 600 V,
VGE = 15 V,
Rg = 1.0
L = 500 μH,
TJ = 125 °C
IC = 100 A,
VCC = 600 V,
VGE = 15 V,
Rg = 1.0
L = 500 μH,
TJ = 25 °C
Energy losses
include tail and
diode recovery
Diode used
HFA16PB120
pF
mJ
ns
mJ
ns
mJ
ns
Revision: 10-Sep-2019
Document Number: 96079
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100DA120UF
www.vishay.com
Vishay Semiconductors
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
Turn-on switching loss
Eon
-
3.9
-
Turn-off switching loss
Eoff
-
7.1
-
-
11.0
-
-
154
-
-
72
-
-
346
-
-
120
-
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
IC = 100 A,
VCC = 600 V,
VGE = 15 V,
Rg = 1.0
L = 500 μH,
TJ = 125 °C
Energy losses
include tail and
diode recovery
Diode used
HFA16PB120
tf
Reverse bias safe operating area
RBSOA
TJ = 150 °C, IC = 250 A, Rg = 1.0
VGE = 15 V to 0 V, VCC = 800 V,
VP = 1200 V, L = 500 μH
Short circuit safe operating area
SCSOA
VGE = 15 V, VCC = 800 V,
VCE max. = 1200 V, TVJ = 150 °C
UNITS
mJ
ns
Fullsquare
-
-
10
μs
-
183
-
ns
-
12
-
A
Diode reverse recovery time
trr
Diode peak reverse current
Irr
Diode recovery charge
Qrr
-
1093
-
nC
Diode reverse recovery time
trr
-
278
-
ns
-
18.2
-
A
-
2541
-
nC
Diode peak reverse current
Irr
Diode recovery charge
Qrr
IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V
IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V,
TJ = 125 °C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction and storage temperature range
Junction to case
Case to heatsink
IGBT
Diode
TEST CONDITIONS
TJ, TStg
RthJC
RthCS
Flat, greased surface
Weight
Mounting torque
Case style
MIN.
TYP.
MAX.
UNITS
-40
-
-
150
°C
-
0.14
-
-
0.31
-
0.1
-
-
30
-
°C/W
g
Torque to terminal
-
-
1.1 (9.7)
Nm (lbf. in)
Torque to heatsink
-
-
1.3 (11.5)
Nm (lbf. in)
SOT-227
Revision: 10-Sep-2019
Document Number: 96079
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100DA120UF
www.vishay.com
Vishay Semiconductors
200
3.2
VGE = 15V
175
150 A
2.8
150
TJ = 150 °C
TJ = 25 °C
VCE (V)
IC (A)
125
100
75
50
2.4
100 A
2.0
50 A
TJ = 125 °C
1.6
25
0
1.2
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20
60
80
120
140
160
Fig. 1 - Typical IGBT Output Characteristics, VGE = 15 V
Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature
200
100
180
90
160
80
VCE = 20 V
70
VGE = 18 V
VGE = 15 V
60
IC (A)
120
100
80
TJ = 125 °C
50
40
VGE = 12 V
60
30
40
20
VGE = 9 V
20
TJ = 25 °C
10
0
0
0
1.0
2.0
3.0
4.0
5.0
5
7
9
11
13
VGE (V)
VCE (V)
Fig. 2 - Typical IGBT Output Characteristics, TJ = 125 °C
Fig. 5 - Typical IGBT Transfer Characteristics
160
7.0
140
6.5
120
6.0
100
VGEth (V)
Allowable Case Temperature (°C)
100
TJ (°C)
140
IC (A)
40
VCE (V)
DC
80
60
5.5
5.0
4.5
40
4.0
20
3.5
0
TJ = 25 °C
TJ = 125 °C
3.0
0
50
100
150
200
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
IC - Continuous Collector Current (A)
IC (mA)
Fig. 3 - Maximum IGBT Continuous Collector Current vs.
Case Temperature
Fig. 6 - Typical IGBT Gate Threshold Voltage
Revision: 10-Sep-2019
Document Number: 96079
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100DA120UF
www.vishay.com
Vishay Semiconductors
8
10
TJ = 150 °C
7
1
6
Eoff
0.1
Energy (mJ)
ICES (mA)
TJ = 125 °C
0.01
5
4
3
2
0.001
Eon
1
TJ = 25 °C
0.0001
0
100 200 300 400 500 600 700 800 900 1000 1100 1200
20
30
40
50
VCES (V)
80
90
100 110
Fig. 10 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, VCC = 600 V, Rg = 1.0 , VGE = 15 V, L = 500 μH
120
1000
100
Switching Time (ns)
td(off)
80
IF (A)
70
IC (A)
Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current
TJ = 25 °C
60
TJ = 125 °C
40
TJ = 150 °C
tf
td(on)
100
tr
20
0
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
20
40
60
80
100
VFM (V)
IC (A)
Fig. 8 - Typical Diode Forward Characteristics
Fig. 11 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, VCC = 600 V, Rg = 1.0 , VGE = 15 V, L = 500 μH
180
12
160
11
140
10
Eon
9
120
DC
100
80
60
Energy (mJ)
Allowable Case Temperature (°C)
60
8
7
5
40
4
20
3
0
Eoff
6
2
0
10 20 30 40 50 60 70 80 90 100 110
0
2
4
6
8
10
12
IF - Continuous Forward Current (A)
Rg (Ω)
Fig. 9 - Maximum Diode Continuous Forward Current vs.
Case Temperature
Fig. 12 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH
Revision: 10-Sep-2019
Document Number: 96079
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100DA120UF
www.vishay.com
Vishay Semiconductors
1000
30
28
26
24
22
20
18
16
14
12
10
8
6
4
td(on)
100
Irr (A)
Switching Time (ns)
td(off)
tf
tr
10
0
2
4
6
8
10
12
TJ = 125 °C
TJ = 25 °C
100
200
Fig. 13 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, VCC = 600 V, IC = 100 A, VGE = 15 V, L = 500 μH
3200
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
600
350
300
TJ = 125 °C
Qrr (nC)
trr (ns)
250
200
150
TJ = 25 °C
50
0
200
500
Fig. 15 - Typical Diode Reverse Recovery Current vs. dIF/dt
Vrr = 400 V, IF = 50 A
400
100
400
dIF/dt (A/μs)
Rg (Ω)
100
300
300
400
TJ = 125 °C
TJ = 25 °C
100
500
200
300
400
500
dIF/dt (A/μs)
Fig. 14 - Typical Diode Reverse Recovery Time vs. dIF/dt
Vrr = 400 V, IF = 50 A
Fig. 16 - Typical Diode Reverse Recovery Charge vs. dIF/dt
Vrr = 400 V, IF = 50 A
1000
tp
=
1
m
μs
Lim
ited
by
V
tp
0
10
CE
(on
)
=
100
=
tp
s
6
s
m
ICE - Collector-Emitter Current (A)
dIF/dt (A/μs)
10
1
0.5
TA = 25 °C
TJ = 150 °C
VGE = 15 V
Single pulse
5
50
500
VCE - Collector-Emitter Voltage (V)
Fig. 17 - IGBT Safe Operating Area
Revision: 10-Sep-2019
Document Number: 96079
6
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100DA120UF
www.vishay.com
Vishay Semiconductors
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.01
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 18 - Maximum Thermal Impedance ZthJC Characteristics - (IGBT)
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 19 - Maximum Thermal Impedance ZthJC Characteristics - (Diode)
IC - Collector Curent (A)
300
250
200
150
100
50
0
1
10
100
1000
VCE (V)
Fig. 20 - IGBT Reverse Bias SOA
VGE = 15 V, TJ = 150°C
Revision: 10-Sep-2019
Document Number: 96079
7
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100DA120UF
www.vishay.com
Vishay Semiconductors
R=
L
D.U.T.
VCC
ICM
VC *
50 V
1000 V
D.U.T.
1
2
+
-V
CC
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max.)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 21 - Clamped Inductive Load Test Circuit
Fig. 22 - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
- +
-5V
+
VCC
D.U.T./
driver
Rg
Fig. 23 - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
td(off)
10 %
IC
5%
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff)
Fig. 24 - Switching Loss Waveforms Test Circuit
Revision: 10-Sep-2019
Document Number: 96079
8
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-GT100DA120UF
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
G
T
100
D
A
120
UF
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Insulated Gate Bipolar Transistor (IGBT)
3
-
Trench IGBT technology
4
-
Current rating (100 = 100 A)
5
-
Circuit configuration (D = single switch with antiparallel diode)
6
-
Package indicator (A = SOT-227)
7
-
Voltage rating (120 = 1200 V)
8
-
Speed/type (UF = Trench ultrafast IGBT)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
CIRCUIT DRAWING
3 (C)
Single switch with AP
diode
Lead Assignment
4
3
1
2
D
2 (G)
1, 4 (E)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95423
Packaging information
www.vishay.com/doc?95425
Revision: 10-Sep-2019
Document Number: 96079
9
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
37.80 (1.488)
38.30 (1.508)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
-A-
4 x M4 nuts
6.25 (0.246)
6.50 (0.256)
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
14.90 (0.587)
15.20 (0.598)
24.70 (0.972)
25.70 (1.012)
R full 2.07 (0.081)
2.12 (0.083)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
4x
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
0.25 (0.010) M C A M B M
4.10 (0.161)
4.50 (0.177)
5.33 (0.210)
5.96 (0.234)
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
Note
• Controlling dimension: millimeter
Document Number: 95423
1
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 19-May-2020
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2023
1
Document Number: 91000