VS-SD1553C..K Series
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Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 1650 A, 1825 A
FEATURES
• High power fast recovery diode series
• 2.0 μs to 3.0 μs recovery time
• High voltage ratings up to 3000 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
K-PUK (DO-200AC)
• Case style conform to JEDEC® K-PUK (DO-200AC)
• Maximum junction temperature 150 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
1650 A, 1825 A
Package
K-PUK (DO-200AC)
Circuit configuration
Single
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
SD1553C..K
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
50 Hz
IFSM
VRRM
trr
UNITS
S20
S30
1825
1650
A
55
55
°C
3100
2800
25 000
22 000
A
60 Hz
26 180
23 000
Range
1800 to 2500
1800 to 3000
V
2.0
3.0
μs
TJ
25
-40 to +150
TJ
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD1553C..S20K
VS-SD1553C..S30K
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
18
1800
1900
22
2200
2300
25
2500
2600
18
1800
1900
22
2200
2300
25
2500
2600
28
2800
2900
30
3000
3100
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
75
Revision: 11-Jan-18
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VS-SD1553C..K Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
I2t
VF(TO)1
VF(TO)2
SD1553C..K
S20
S30
1825
(865)
1650
(790)
180° conduction, half sine wave
Double side (single side) cooled
55 (85)
55 (85)
25 °C heatsink temperature double side cooled
3100
2800
25 000
22 000
t = 10 ms No voltage
t = 8.3 ms reapplied
26 180
23 000
t = 10 ms 100 % VRRM
21 030
18 500
Sinusoidal half wave,
t = 8.3 ms reapplied
22 010
19 370
initial TJ = TJ
t = 10 ms No voltage
3126
2421
maximum
t = 8.3 ms reapplied
2854
2210
t = 10 ms 100 % VRRM
2210
1712
t = 8.3 ms reapplied
2018
1563
t = 0.1 to 10 ms, no voltage reapplied
31 260
24 210
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
1.15
1.31
(I > x IF(AV)), TJ = TJ maximum
1.29
1.45
TEST CONDITIONS
rf1
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
0.27
0.32
rf2
(I > x IF(AV)), TJ = TJ maximum
0.25
0.30
VFM
Ipk = 4000 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
2.23
2.60
UNITS
A
°C
A
kA2s
kA2s
V
mW
Maximum forward voltage drop
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
Ipk
SQUARE
PULSE
(A)
trr AT 25 % IRRM
(μs)
S20
S30
TYPICAL VALUES
AT TJ = 150 °C
TEST CONDITIONS
2.0
3.0
1000
IFM
dI/dt
(A/μs)
100
Vr
(V)
trr AT 25 % IRRM
(μs)
Qrr
(μC)
Irr
(A)
- 50
4.5
5.0
650
780
240
260
trr
t
dir
dt
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
case junction to heatsink
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
-40 to 150
°C
0.04
K/W
0.02
22 250
N
(2250)
(kg)
425
g
K-PUK (DO-200AC)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
0.0018
0.0019
0.0021
0.0021
0.0027
0.0027
0.0039
0.0039
0.0067
0.0067
RECTANGULAR CONDUCTION
SINGLE SIDE
DOUBLE SIDE
0.0012
0.0012
0.0021
0.0021
0.0029
0.0029
0.0041
0.0041
0.0068
0.0068
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93169
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VS-SD1553C..K Series
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160
SD 1 5 5 3 C ..S 2 0 K S e rie s
(Sin g le Sid e C o o le d )
R th J- hs (D C ) = 0 .0 4 K / W
1 40
1 20
C o nduc tion A ng le
1 00
80
18 0°
30°
60
60°
90°
12 0°
40
0
200
400
600
800
1 0 00
1 2 00
Maxim um Allowable Heatsink Tem peratu re ( °C)
M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (°C )
1 60
Vishay Semiconductors
SD1553C..S30K Series
(Single Sid e Cooled )
Rth J-hs (DC) = 0.04 K/W
140
120
100
C o nduc tio n P e rio d
80
30°
60
60°
90°
40
120°
180°
0
800
1200
1600
2000
Fig. 1 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
160
°C )
160
M a x im u m A llo w a b le H e a ts in k T e m p e ra t u re (
Maxim um Allow able Heatsin k T em perature (°C)
400
Average Forward Current (A)
A v e ra g e F o rw a r d C u rre n t (A )
140
SD1553C..S20K Series
(Sin gle Side Cooled)
R th J- hs (DC) = 0.04 K/W
140
120
100
C o ndu c tio n Pe rio d
80
30°
60
60°
40
90°
120°
20
180°
DC
0
0
400
800
1200
1600
2000
S D 1 5 5 3 C ..S 2 0 K Se rie s
(D o u b le S id e C o o le d )
R th J- hs (D C ) = 0 .0 2 K / W
120
100
C o ndu c tio n A ng le
80
60
40
60 °
90°
30°
1 2 0°
1 8 0°
20
0
500
1 00 0
15 0 0
2 0 00
2 5 00
A v e ra g e F o r w a rd C u rre n t (A )
Average Forward Curren t (A)
Fig. 2 - Current Ratings Characteristics
Fig. 5 - Current Ratings Characteristics
160
160
SD 1553C..S30K Series
(Single Side Cooled)
R thJ-hs (D C) = 0.04 K/W
140
120
C o ndu ctio n A ng le
100
80
30°
60
180°
60°
90°
120°
40
0
200
400
600
800
1000
1200
Average Forward Curren t (A)
Fig. 3 - Current Ratings Characteristics
Maxim um Allowable Heatsink Tem perature (°C)
Maxim um Allowable Heatsink Tem perature (°C)
DC
20
SD 1553C..S20K Series
(Double Side Cooled)
Rth J- hs (DC) = 0.02 K/W
140
120
100
C o nd uc tio n Pe rio d
80
60
90°
40
60°
30°
120°
180°
DC
20
0
500 1000 1500 2000 2500 3000 3500
Average Forward Curren t (A)
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
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VS-SD1553C..K Series
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7000
SD1553C..S30K Series
(D ouble Side Cooled)
R th J-hs (DC) = 0.02 K/W
140
120
C o nduc tio n A ng le
100
80
30°
60°
90°
60
120°
180°
40
0
400
800
1200
1600
Maxim um Average Forward Pow er Loss (W )
Maxim um Allowab le Heatsin k Tem pera ture (°C)
160
Vishay Semiconductors
DC
180°
120°
90°
60°
30°
6000
5000
4000
RMS L im it
3000
C o ndu ctio n P e rio d
2000
SD 1553C..S20K Series
TJ = 150°C
1000
0
0
2000
Average Forward Current (A)
Average Forwa rd Current (A)
Fig. 7 - Current Ratings Characteristics
Fig. 10 - Forward Power Loss Characteristics
50 0 0
SD 1553C..S30K Series
(Double Side Cooled)
R th J- hs (DC) = 0.02 K/W
140
120
100
Co n du ctio n Pe rio d
80
60
90°
40
30°
60°
120°
180°
DC
2000
2500
20
0
500
1000
1500
3000
M a xim u m A v e ra g e F o rw a rd P ow e r Lo s s (W )
Maximum Allowable H eatsink Temperature (°C)
160
1 8 0°
1 2 0°
90°
60°
30°
40 0 0
30 0 0
R M S Lim it
20 0 0
Co nd uc tio n A ng le
10 0 0
S D 1 5 5 3 C ..S3 0 K S e rie s
TJ = 1 5 0° C
0
0
Average Forward Curren t (A)
500
1 0 00
1 50 0
2 00 0
A v e ra g e Fo rw a rd C u rre n t (A )
Fig. 8 - Current Ratings Characteristics
Fig. 11 - Forward Power Loss Characteristics
7000
4 50 0
1 8 0°
1 2 0°
90°
60°
30°
4 00 0
3 50 0
3 00 0
R M S Lim it
2 50 0
2 00 0
1 50 0
C on duc tion Ang le
1 00 0
SD 1 5 5 3 C ..S2 0 K Se r ie s
TJ = 1 5 0° C
5 00
0
0
50 0
10 0 0
1 50 0
2 0 00
A v e ra g e F o rw a r d C u rre n t (A )
Fig. 9 - Forward Power Loss Characteristics
Maxim um Average Forw ard Power Loss ( W )
5 00 0
M a xim u m A v e ra g e F o rw a rd Po w e r Lo ss (W )
500 1000 1500 2000 2500 3000 3500
DC
180°
120°
90°
60°
30°
6000
5000
4000
RMS Limit
3000
C o nd uc tio n Pe rio d
2000
SD 1553C..S30K Series
TJ = 150°C
1000
0
0
500
1000
1500 2000
2500
3000
Average Forward Current (A)
Fig. 12 - Forward Power Loss Characteristics
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24000
A t A n y R a t e d Lo a d C o n d it io n A n d W ith
R a t e d V RRM A p p lie d Fo llo w in g S u rg e .
In it ia l TJ = 1 5 0 °C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
2 25 0 0
2 00 0 0
P e a k H alf Sin e W a v e F o rw a rd C u rre n t (A )
P ea k H a lf S in e W a v e Fo rw a rd C u rre n t (A )
2 50 0 0
Vishay Semiconductors
1 75 0 0
1 50 0 0
1 25 0 0
1 00 0 0
75 0 0
SD 1 5 5 3 C ..S2 0 K S e rie s
50 0 0
1
10
22000
20000
18000
M a xim u m N o n R e p e t itiv e S ur g e C urre n t
V e rsu s P u lse Tra in D u ra t io n .
In it ia l T J = 1 5 0 °C
N o V o lt a g e R e a pp lie d
R a t e d V RR MRe a p p lie d
16000
14000
12000
10000
8000
SD 1 5 5 3 C ..S 3 0 K S e rie s
6000
4000
0.01
10 0
0.1
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Maxim um Non Repetitive Surge Curren t
V ersus Pulse Train Duration .
In itial TJ = 150 °C
No Voltage Reapplied
Rated V RR MReapplied
22500
20000
17500
15000
12500
10000
7500
SD1553C..S20K Series
5000
0.01
0.1
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
In stantaneous Forwa rd Current (A)
Peak Half Sine Wave Forw ard Curren t (A)
25000
TJ = 25°C
1000
TJ = 150°C
SD1553C..S20K Series
100
0.5
1
Pulse T rain Duration (s)
1
1.5
2
2.5
3
3.5
4
Instantan eous Forw ard Voltag e (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
1 00 0 0
A t A n y R a t e d Lo a d C o n d itio n A n d W it h
Ra t e d V RR M A p p lie d Fo llo w in g S u rg e .
In itia l TJ = 1 5 0° C
@ 6 0 H z 0 .0 0 8 3 s
@ 5 0 H z 0 .0 1 0 0 s
18 0 00
16 0 00
14 0 00
12 0 00
10 0 00
8 0 00
SD 1 5 5 3 C ..S3 0 K S e rie s
TJ = 2 5°C
In st a n t a n e o u s F o rw a rd C u rre n t (A )
20 0 00
P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A )
1
P u lse Tr a in D u ra tio n ( s)
N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulse s (N )
TJ = 1 5 0° C
1 00 0
S D 1 5 5 3 C ..S3 0 K S e rie s
100
6 0 00
1
10
10 0
Nu m be r O f E qua l A m plitud e Ha lf C yc le Cu rre nt Pulses (N )
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
1
1 .5
2
2 .5
3
3 .5
4
4 .5
In st a n ta n e o u s F o rw a rd V o lt a g e (V )
Fig. 18 - Forward Voltage Drop Characteristics
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VS-SD1553C..K Series
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0 .1
T ra n sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W )
St e a d y St a te V a lu e
R th J-hs = 0 .0 4 K / W
( Sin g le Sid e C o o le d )
R t hJ- hs = 0 .0 2 K / W
0 .0 1
( D o u ble Side C o o le d )
( D C O p e ra t io n )
0 .0 0 1
S D 1 5 5 3 C ..S 2 0 /S 3 0 K Se rie s
0 .0 0 0 1
0 .0 0 1
0. 01
0 .1
1
10
10 0
S q ua re W a v e Pu lse D ura tio n ( s)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
80
M a x im u m R e v e r se R e c o v e r y T im e - Trr (µ s)
7 .5
VFP
Fo rw a rd R e c o v e ry (V )
I
TJ = 1 5 0° C
60
40
TJ = 2 5° C
20
SD 1 5 5 3 C ..S 2 0 K Se rie s
0
0
4 00
8 00
12 0 0
1 6 00
20 0 0
R a t e O f R ise O f F o rw a rd C u rre n t - d i/d t (A / u s)
Fig. 20 - Typical Forward Recovery Characteristics
6 .5
6
5 .5
I FM = 1 50 0 A
Sin e Pulse
5
1 00 0 A
4 .5
50 0 A
4
3 .5
3
2 .5
10
10 0
10 0 0
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 22 - Recovery Time Characteristics
1 40 0
VFP
I
80
TJ = 1 5 0°C
60
T J = 2 5° C
40
20
S D 1 5 5 3 C ..S 3 0 K Se r ie s
0
0
40 0
80 0
1 2 00
1 60 0
2 00 0
R ate O f Ri se O f Fo rw ard Cu rre nt - di/ dt (A/ u s)
Fig. 21 - Typical Forward Recovery Characteristics
M ax im u m R e v e rse R e c o v e ry C h a rg e - Q rr (µ C )
100
Fo rw a rd R e c o v e ry (V )
SD 1 5 5 3 C ..S 2 0 K S e rie s
TJ = 1 5 0 °C ; V r > 1 0 0 V
7
I FM = 15 00 A
Sine Pulse
1 20 0
1 00 0
10 00 A
8 00
5 00 A
6 00
4 00
S D 1 5 5 3 C ..S2 0 K Se rie s
TJ = 1 5 0 °C ; V r > 1 0 0 V
2 00
0
0
50
1 0 0 15 0 20 0 25 0 30 0
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 23 - Recovery Charge Characteristics
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VS-SD1553C..K Series
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70 0
60 0
M a xim u m R e v e rse R e c o v e ry C urre n t - Irr (A )
M a xim u m R e v e r se Re c o v e ry C ur re n t - Irr (A )
70 0
I FM = 1 500 A
Sine Pulse
50 0
10 00 A
40 0
500 A
30 0
20 0
SD 1 5 5 3 C ..S2 0 K Se rie s
TJ = 1 5 0 ° C ; V r > 1 0 0 V
10 0
0
0
50
1 00 1 50 20 0 2 5 0 3 0 0
1 00 0 A
50 0
5 00 A
40 0
30 0
20 0
SD 1 5 5 3 C ..S3 0 K Se rie s
TJ = 1 5 0 ° C ; V r > 1 0 0 V
10 0
0
0
50
Fig. 24 - Recovery Current Characteristics
Fig. 27 - Recovery Current Characteristics
1E4
8 .5
S D 1 5 5 3 C ..S 3 0 K S e rie s
TJ = 1 5 0 °C ; V r > 1 0 0 V
8
4
7 .5
6
10 jo u le s pe r p ulse
Peak Forward Curren t (A)
2
7
6 .5
6
I FM = 150 0 A
Sine Pulse
5 .5
100 0 A
5
500 A
4 .5
1
0.6
0. 4
0.2
1E3
0.1
4
SD 1 5 5 3 C..S2 0 K Se ri es
Si nu soi da l Pu lse
TJ = 1 5 0°C , V RRM = 8 0 0V
d v/ d t = 1 0 0 0 V/ µs
tp
1E2
1E1
3 .5
10
1 00
10 0 0
1E 2
1E3
1E4
Pulse Basew idth (µs)
Ra te Of Fall O f Fo rw ard C urrent - di/dt ( A/µs)
Fig. 25 - Recovery Time Characteristics
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1 60 0
I FM = 150 0 A
Sine Pu lse
1 40 0
10 00 A
1 20 0
500 A
1 00 0
80 0
60 0
40 0
SD 1 5 5 3 C ..S3 0 K S e rie s
TJ = 1 5 0 ° C ; V r > 1 0 0 V
20 0
0
0
50
10 0 1 5 0 2 00 25 0 30 0
Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs)
Fig. 26 - Recovery Charge Characteristics
20 0 0
10 0 0
4 00 20 0 10 0 5 0 Hz
3000
Peak Forward Current (A)
M ax im u m R e v e rse R e c o v e ry C h a rg e - Q rr (µ C )
10 0 15 0 2 00 25 0 30 0
Rate O f Fa ll O f Fo rward C urren t - di/dt (A/µs)
Rate O f Fall O f Fo rw ard Cu rrent - d i/dt ( A/µs)
M a x im u m R e v e rse R e c o v e ry T im e - T rr (µ s)
I FM = 1 50 0 A
Sine Pulse
60 0
40 0 0
6000
10 0 0 0
1E3
15 0 00
2 0 00 0
tp
1E2
1E1
1E2
SD 1 5 5 3 C ..S2 0 K Se ri es
Sin uso i da l Pu lse
TC = 5 5°C , V RRM = 8 0 0 V
d v / dt = 1 00 0V / us
1E 3
1E4
Pulse Basewid th (µs)
Fig. 29 - Frequency Characteristics
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Vishay Semiconductors
1E4
1E 4
Peak Forward Current (A)
Peak Forw ard Current (A)
10 jo ules p er p ulse
6
4
2
1
1E3
0. 8
0 .6
0 .4
SD 1 5 5 3 C ..S2 0 K S eri es
Trap e zoi dal Puls e
TJ = 1 5 0°C, V RRM = 8 0 0 V
d v/ d t = 1 0 0 0 V/ µs
d i/d t = 3 0 0 A / µs
tp
1E2
1E1
1E2
1E3
2 00 0
6 00 0
1 0 00 0
1E 3
1E2
1E 3
1E4
Pulse Basewidth (µs)
Fig. 33 - Frequency Characteristics
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E4
2000
1 0 00
50 H z
20 0 10 0
6 00 4 0 0
4
Peak Forward Current (A)
Peak Forw ard Current (A)
tp
20 0 0 0
Pulse Basew idth (µs)
3 00 0
4 00 0
6000
1E3
1 00 0 0
SD 1 5 5 3 C ..S2 0K Se rie s
Tr ape z oi dal Pu ls e
TC = 5 5°C , V RRM = 8 0 0 V
d v /d t = 1 0 0 0V /u s,
d i/ dt = 3 0 0 A / us
15 0 0 0
20 0 0 0
tp
1E2
1E3
10 jo ule s p er p ulse
0 .6
0 .4
1E3
0 .2
1E2
1E1
1E4
6
2
1
SD 1 5 5 3 C. .S3 0 K Se r ie s
Sin uso id al Pu l se
TJ = 1 50° C , V RRM = 1 0 0 0V
d v / dt = 1 00 0V / µs
tp
1E2
1E 1
1E2
1E3
1E4
Pulse Basew id th (µs)
Pulse Basewidth (µs)
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 31 - Frequency Characteristics
1E4
1E4
3000
10 jo ules p er pulse
4
6
Peak Forward Curren t (A)
Peak F orward Cu rrent (A)
SD 1 55 3C ..S2 0 K Se ri es
Tra pez o idal Pu lse
TC = 5 5°C , V RRM= 8 0 0 V
d v / dt = 1 0 0 0 V/ us,
d i/ d t = 1 0 0 A / us
1 50 0 0
1E 2
1E 1
1E4
20 0 1 00 50 Hz
1 0 00 40 0
2
1
0 .8
1E3
0. 6
0. 4
tp
1E2
1E 1
SD 1 5 5 3 C ..S2 0 K S er ie s
Tra pe zo id al Pu lse
TJ = 1 5 0°C , V RRM = 8 0 0 V
d v /d t = 1 0 0 0 V / µs
d i/ dt = 1 0 0 A /µ s
1E2
1E3
Pulse Ba sew idth (µs)
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
2 00 0
1 0 00
4 00
20 0
1 00 5 0 Hz
4000
6 00 0
1 0 00 0
tp
1E3
1E 1
1E2
SD 1 5 5 3 C ..S3 0 K Se r ie s
Si n uso id al P u lse
TC = 5 5°C, VR R M = 1 0 0 0 V
dv / d t = 1 0 0 0 V / us
1E3
1E4
P ulse Basewidth (µs)
Fig. 35 - Frequency Characteristics
Revision: 11-Jan-18
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-SD1553C..K Series
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Vishay Semiconductors
1E4
1E4
1 0 jo ule s pe r pulse
Peak Forward Current (A)
Peak Forward Current (A)
1 0 jo u le s pe r pu lse
6
4
2
1E3
1
0 .6
tp
1E2
1E1
0 .8
SD 1 5 5 3 C ..S3 0 K Se rie s
Tra pe zo ida l Pu lse
TJ = 1 5 0°C , V RRM = 1 0 0 0 V
d v /d t = 1 0 0 0 V /µ s
d i/ dt = 30 0A / µ s
1E 2
6
4
2
1
1E3
0. 8
0 .6
tp
1E3
SD 1 5 5 3 C..S3 0 K Se rie s
Tr ape zo ida l Pu lse
TJ = 1 5 0°C , V RRM = 1 0 0 0 V
d v / dt = 10 0 0V / µs
d i/ d t = 1 0 0 A / µs
1E2
1E1
1E4
1E2
1E 4
2 00 0
50 Hz
20 0 1 00
1 0 0 0 4 00
4 00 0
6000
10 0 0 0
15 0 0 0
20 0 0 0
tp
1E2
SD 1 5 5 3 C ..S3 0 K Se rie s
T rape zo i dal Pul se
TC = 5 5° C, V RRM = 1 0 0 0 V
d v / dt = 10 0 0 V/ u s,
d i/ d t = 3 0 0 A / us
1E3
4 00
6 00
Peak Forward Current (A)
Peak Forward Current (A)
1E 4
1E 2
1E1
1E4
Fig. 38 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 36 - Maximum Total Energy Loss
Per Pulse Characteristics
1E 3
1E3
Pulse Basew idth (µs)
Pulse Basewid th (µs)
100
50 H z
4 0 00
tp
SD 1 5 5 3 C.. S3 0 K Se r ie s
T rap ez o idal Pul se
TC = 5 5°C , V R R M = 1 0 0 0 V
d v/ dt = 1 0 0 0 V/ u s,
d i/d t = 10 0A / u s
1E 3
1E1
1E 4
20 0
1000
2 00 0
1E 2
1E 3
1E4
Pulse Basew idth (µs)
Pulse Ba sew idth (µs)
Fig. 39 - Frequency Characteristics
Fig. 37 - Frequency Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
155
3
C
30
S30
K
1
2
3
4
5
6
7
8
2
-
Vishay Semiconductors product
Diode
3
-
Essential part number
4
-
3 = fast recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
trr code
8
-
K = PUK case K-PUK (DO-200AC)
1
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95247
Revision: 11-Jan-18
Document Number: 93169
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
K-PUK (DO-200AC)
DIMENSIONS in millimeters (inches)
74.5 (2.93) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
1 (0.04) MIN.
both ends
47.5 (1.87) DIA. MAX.
2 places
27.5 (1.08) MAX.
C
A
67 (2.64) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 12-Jul-17
Document Number: 95247
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
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Document Number: 91000