VS-SD1553C30S30K

VS-SD1553C..K Series www.vishay.com Vishay Semiconductors Fast Recovery Diodes (Hockey PUK Version), 1650 A, 1825 A FEATURES • High power fast recovery diode series • 2.0 μs to 3.0 μs recovery time • High voltage ratings up to 3000 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation K-PUK (DO-200AC) • Case style conform to JEDEC® K-PUK (DO-200AC) • Maximum junction temperature 150 °C • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) 1650 A, 1825 A Package K-PUK (DO-200AC) Circuit configuration Single TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS PARAMETER SD1553C..K TEST CONDITIONS IF(AV) Ths IF(RMS) 50 Hz IFSM VRRM trr UNITS S20 S30 1825 1650 A 55 55 °C 3100 2800 25 000 22 000 A 60 Hz 26 180 23 000 Range 1800 to 2500 1800 to 3000 V 2.0 3.0 μs TJ 25 -40 to +150 TJ °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-SD1553C..S20K VS-SD1553C..S30K VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 18 1800 1900 22 2200 2300 25 2500 2600 18 1800 1900 22 2200 2300 25 2500 2600 28 2800 2900 30 3000 3100 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA 75 Revision: 11-Jan-18 Document Number: 93169 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1553C..K Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum average forward current  at heatsink temperature Maximum RMS forward current IF(AV) IF(RMS) Maximum peak, one-cycle forward, non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance I2t VF(TO)1 VF(TO)2 SD1553C..K S20 S30 1825 (865) 1650 (790) 180° conduction, half sine wave Double side (single side) cooled 55 (85) 55 (85) 25 °C heatsink temperature double side cooled 3100 2800 25 000 22 000 t = 10 ms No voltage t = 8.3 ms reapplied 26 180 23 000 t = 10 ms 100 % VRRM 21 030 18 500 Sinusoidal half wave, t = 8.3 ms reapplied 22 010 19 370 initial TJ = TJ t = 10 ms No voltage 3126 2421 maximum t = 8.3 ms reapplied 2854 2210 t = 10 ms 100 % VRRM 2210 1712 t = 8.3 ms reapplied 2018 1563 t = 0.1 to 10 ms, no voltage reapplied 31 260 24 210 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 1.15 1.31 (I >  x IF(AV)), TJ = TJ maximum 1.29 1.45 TEST CONDITIONS rf1 (16.7 % x  x IF(AV) < I <  x IF(AV)), TJ = TJ maximum 0.27 0.32 rf2 (I >  x IF(AV)), TJ = TJ maximum 0.25 0.30 VFM Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 2.23 2.60 UNITS A °C A kA2s kA2s V mW Maximum forward voltage drop V RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE Ipk SQUARE PULSE (A) trr AT 25 % IRRM (μs) S20 S30 TYPICAL VALUES AT TJ = 150 °C TEST CONDITIONS 2.0 3.0 1000 IFM dI/dt (A/μs) 100 Vr (V) trr AT 25 % IRRM (μs) Qrr (μC) Irr (A) - 50 4.5 5.0 650 780 240 260 trr t dir dt Qrr IRM(REC) THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, case junction to heatsink SYMBOL TEST CONDITIONS TJ, TStg RthJ-hs DC operation single side cooled DC operation double side cooled Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet VALUES UNITS -40 to 150 °C 0.04 K/W 0.02 22 250 N (2250) (kg) 425 g K-PUK (DO-200AC) RthJ-hs CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION SINGLE SIDE DOUBLE SIDE 0.0018 0.0019 0.0021 0.0021 0.0027 0.0027 0.0039 0.0039 0.0067 0.0067 RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE 0.0012 0.0012 0.0021 0.0021 0.0029 0.0029 0.0041 0.0041 0.0068 0.0068 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Revision: 11-Jan-18 Document Number: 93169 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1553C..K Series www.vishay.com 160 SD 1 5 5 3 C ..S 2 0 K S e rie s (Sin g le Sid e C o o le d ) R th J- hs (D C ) = 0 .0 4 K / W 1 40 1 20 C o nduc tion A ng le 1 00 80 18 0° 30° 60 60° 90° 12 0° 40 0 200 400 600 800 1 0 00 1 2 00 Maxim um Allowable Heatsink Tem peratu re ( °C) M a x im u m A llo w a b le H e a t sin k T e m p e ra t u re (°C ) 1 60 Vishay Semiconductors SD1553C..S30K Series (Single Sid e Cooled ) Rth J-hs (DC) = 0.04 K/W 140 120 100 C o nduc tio n P e rio d 80 30° 60 60° 90° 40 120° 180° 0 800 1200 1600 2000 Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics 160 °C ) 160 M a x im u m A llo w a b le H e a ts in k T e m p e ra t u re ( Maxim um Allow able Heatsin k T em perature (°C) 400 Average Forward Current (A) A v e ra g e F o rw a r d C u rre n t (A ) 140 SD1553C..S20K Series (Sin gle Side Cooled) R th J- hs (DC) = 0.04 K/W 140 120 100 C o ndu c tio n Pe rio d 80 30° 60 60° 40 90° 120° 20 180° DC 0 0 400 800 1200 1600 2000 S D 1 5 5 3 C ..S 2 0 K Se rie s (D o u b le S id e C o o le d ) R th J- hs (D C ) = 0 .0 2 K / W 120 100 C o ndu c tio n A ng le 80 60 40 60 ° 90° 30° 1 2 0° 1 8 0° 20 0 500 1 00 0 15 0 0 2 0 00 2 5 00 A v e ra g e F o r w a rd C u rre n t (A ) Average Forward Curren t (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - Current Ratings Characteristics 160 160 SD 1553C..S30K Series (Single Side Cooled) R thJ-hs (D C) = 0.04 K/W 140 120 C o ndu ctio n A ng le 100 80 30° 60 180° 60° 90° 120° 40 0 200 400 600 800 1000 1200 Average Forward Curren t (A) Fig. 3 - Current Ratings Characteristics Maxim um Allowable Heatsink Tem perature (°C) Maxim um Allowable Heatsink Tem perature (°C) DC 20 SD 1553C..S20K Series (Double Side Cooled) Rth J- hs (DC) = 0.02 K/W 140 120 100 C o nd uc tio n Pe rio d 80 60 90° 40 60° 30° 120° 180° DC 20 0 500 1000 1500 2000 2500 3000 3500 Average Forward Curren t (A) Fig. 6 - Current Ratings Characteristics Revision: 11-Jan-18 Document Number: 93169 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1553C..K Series www.vishay.com 7000 SD1553C..S30K Series (D ouble Side Cooled) R th J-hs (DC) = 0.02 K/W 140 120 C o nduc tio n A ng le 100 80 30° 60° 90° 60 120° 180° 40 0 400 800 1200 1600 Maxim um Average Forward Pow er Loss (W ) Maxim um Allowab le Heatsin k Tem pera ture (°C) 160 Vishay Semiconductors DC 180° 120° 90° 60° 30° 6000 5000 4000 RMS L im it 3000 C o ndu ctio n P e rio d 2000 SD 1553C..S20K Series TJ = 150°C 1000 0 0 2000 Average Forward Current (A) Average Forwa rd Current (A) Fig. 7 - Current Ratings Characteristics Fig. 10 - Forward Power Loss Characteristics 50 0 0 SD 1553C..S30K Series (Double Side Cooled) R th J- hs (DC) = 0.02 K/W 140 120 100 Co n du ctio n Pe rio d 80 60 90° 40 30° 60° 120° 180° DC 2000 2500 20 0 500 1000 1500 3000 M a xim u m A v e ra g e F o rw a rd P ow e r Lo s s (W ) Maximum Allowable H eatsink Temperature (°C) 160 1 8 0° 1 2 0° 90° 60° 30° 40 0 0 30 0 0 R M S Lim it 20 0 0 Co nd uc tio n A ng le 10 0 0 S D 1 5 5 3 C ..S3 0 K S e rie s TJ = 1 5 0° C 0 0 Average Forward Curren t (A) 500 1 0 00 1 50 0 2 00 0 A v e ra g e Fo rw a rd C u rre n t (A ) Fig. 8 - Current Ratings Characteristics Fig. 11 - Forward Power Loss Characteristics 7000 4 50 0 1 8 0° 1 2 0° 90° 60° 30° 4 00 0 3 50 0 3 00 0 R M S Lim it 2 50 0 2 00 0 1 50 0 C on duc tion Ang le 1 00 0 SD 1 5 5 3 C ..S2 0 K Se r ie s TJ = 1 5 0° C 5 00 0 0 50 0 10 0 0 1 50 0 2 0 00 A v e ra g e F o rw a r d C u rre n t (A ) Fig. 9 - Forward Power Loss Characteristics Maxim um Average Forw ard Power Loss ( W ) 5 00 0 M a xim u m A v e ra g e F o rw a rd Po w e r Lo ss (W ) 500 1000 1500 2000 2500 3000 3500 DC 180° 120° 90° 60° 30° 6000 5000 4000 RMS Limit 3000 C o nd uc tio n Pe rio d 2000 SD 1553C..S30K Series TJ = 150°C 1000 0 0 500 1000 1500 2000 2500 3000 Average Forward Current (A) Fig. 12 - Forward Power Loss Characteristics Revision: 11-Jan-18 Document Number: 93169 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1553C..K Series www.vishay.com 24000 A t A n y R a t e d Lo a d C o n d it io n A n d W ith R a t e d V RRM A p p lie d Fo llo w in g S u rg e . In it ia l TJ = 1 5 0 °C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 2 25 0 0 2 00 0 0 P e a k H alf Sin e W a v e F o rw a rd C u rre n t (A ) P ea k H a lf S in e W a v e Fo rw a rd C u rre n t (A ) 2 50 0 0 Vishay Semiconductors 1 75 0 0 1 50 0 0 1 25 0 0 1 00 0 0 75 0 0 SD 1 5 5 3 C ..S2 0 K S e rie s 50 0 0 1 10 22000 20000 18000 M a xim u m N o n R e p e t itiv e S ur g e C urre n t V e rsu s P u lse Tra in D u ra t io n . In it ia l T J = 1 5 0 °C N o V o lt a g e R e a pp lie d R a t e d V RR MRe a p p lie d 16000 14000 12000 10000 8000 SD 1 5 5 3 C ..S 3 0 K S e rie s 6000 4000 0.01 10 0 0.1 Fig. 13 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10000 Maxim um Non Repetitive Surge Curren t V ersus Pulse Train Duration . In itial TJ = 150 °C No Voltage Reapplied Rated V RR MReapplied 22500 20000 17500 15000 12500 10000 7500 SD1553C..S20K Series 5000 0.01 0.1 Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled In stantaneous Forwa rd Current (A) Peak Half Sine Wave Forw ard Curren t (A) 25000 TJ = 25°C 1000 TJ = 150°C SD1553C..S20K Series 100 0.5 1 Pulse T rain Duration (s) 1 1.5 2 2.5 3 3.5 4 Instantan eous Forw ard Voltag e (V) Fig. 14 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 17 - Forward Voltage Drop Characteristics 1 00 0 0 A t A n y R a t e d Lo a d C o n d itio n A n d W it h Ra t e d V RR M A p p lie d Fo llo w in g S u rg e . In itia l TJ = 1 5 0° C @ 6 0 H z 0 .0 0 8 3 s @ 5 0 H z 0 .0 1 0 0 s 18 0 00 16 0 00 14 0 00 12 0 00 10 0 00 8 0 00 SD 1 5 5 3 C ..S3 0 K S e rie s TJ = 2 5°C In st a n t a n e o u s F o rw a rd C u rre n t (A ) 20 0 00 P e a k H a lf S in e W a v e Fo rw a rd C u rr e n t (A ) 1 P u lse Tr a in D u ra tio n ( s) N um be r O f E qua l Am p litude Ha lf C yc le C urrent Pulse s (N ) TJ = 1 5 0° C 1 00 0 S D 1 5 5 3 C ..S3 0 K S e rie s 100 6 0 00 1 10 10 0 Nu m be r O f E qua l A m plitud e Ha lf C yc le Cu rre nt Pulses (N ) Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 1 1 .5 2 2 .5 3 3 .5 4 4 .5 In st a n ta n e o u s F o rw a rd V o lt a g e (V ) Fig. 18 - Forward Voltage Drop Characteristics Revision: 11-Jan-18 Document Number: 93169 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1553C..K Series www.vishay.com Vishay Semiconductors 0 .1 T ra n sie n t T h e rm a l Im p e d a n c e Z thJ-hs (K / W ) St e a d y St a te V a lu e R th J-hs = 0 .0 4 K / W ( Sin g le Sid e C o o le d ) R t hJ- hs = 0 .0 2 K / W 0 .0 1 ( D o u ble Side C o o le d ) ( D C O p e ra t io n ) 0 .0 0 1 S D 1 5 5 3 C ..S 2 0 /S 3 0 K Se rie s 0 .0 0 0 1 0 .0 0 1 0. 01 0 .1 1 10 10 0 S q ua re W a v e Pu lse D ura tio n ( s) Fig. 19 - Thermal Impedance ZthJ-hs Characteristic 80 M a x im u m R e v e r se R e c o v e r y T im e - Trr (µ s) 7 .5 VFP Fo rw a rd R e c o v e ry (V ) I TJ = 1 5 0° C 60 40 TJ = 2 5° C 20 SD 1 5 5 3 C ..S 2 0 K Se rie s 0 0 4 00 8 00 12 0 0 1 6 00 20 0 0 R a t e O f R ise O f F o rw a rd C u rre n t - d i/d t (A / u s) Fig. 20 - Typical Forward Recovery Characteristics 6 .5 6 5 .5 I FM = 1 50 0 A Sin e Pulse 5 1 00 0 A 4 .5 50 0 A 4 3 .5 3 2 .5 10 10 0 10 0 0 Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs) Fig. 22 - Recovery Time Characteristics 1 40 0 VFP I 80 TJ = 1 5 0°C 60 T J = 2 5° C 40 20 S D 1 5 5 3 C ..S 3 0 K Se r ie s 0 0 40 0 80 0 1 2 00 1 60 0 2 00 0 R ate O f Ri se O f Fo rw ard Cu rre nt - di/ dt (A/ u s) Fig. 21 - Typical Forward Recovery Characteristics M ax im u m R e v e rse R e c o v e ry C h a rg e - Q rr (µ C ) 100 Fo rw a rd R e c o v e ry (V ) SD 1 5 5 3 C ..S 2 0 K S e rie s TJ = 1 5 0 °C ; V r > 1 0 0 V 7 I FM = 15 00 A Sine Pulse 1 20 0 1 00 0 10 00 A 8 00 5 00 A 6 00 4 00 S D 1 5 5 3 C ..S2 0 K Se rie s TJ = 1 5 0 °C ; V r > 1 0 0 V 2 00 0 0 50 1 0 0 15 0 20 0 25 0 30 0 Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs) Fig. 23 - Recovery Charge Characteristics Revision: 11-Jan-18 Document Number: 93169 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1553C..K Series www.vishay.com Vishay Semiconductors 70 0 60 0 M a xim u m R e v e rse R e c o v e ry C urre n t - Irr (A ) M a xim u m R e v e r se Re c o v e ry C ur re n t - Irr (A ) 70 0 I FM = 1 500 A Sine Pulse 50 0 10 00 A 40 0 500 A 30 0 20 0 SD 1 5 5 3 C ..S2 0 K Se rie s TJ = 1 5 0 ° C ; V r > 1 0 0 V 10 0 0 0 50 1 00 1 50 20 0 2 5 0 3 0 0 1 00 0 A 50 0 5 00 A 40 0 30 0 20 0 SD 1 5 5 3 C ..S3 0 K Se rie s TJ = 1 5 0 ° C ; V r > 1 0 0 V 10 0 0 0 50 Fig. 24 - Recovery Current Characteristics Fig. 27 - Recovery Current Characteristics 1E4 8 .5 S D 1 5 5 3 C ..S 3 0 K S e rie s TJ = 1 5 0 °C ; V r > 1 0 0 V 8 4 7 .5 6 10 jo u le s pe r p ulse Peak Forward Curren t (A) 2 7 6 .5 6 I FM = 150 0 A Sine Pulse 5 .5 100 0 A 5 500 A 4 .5 1 0.6 0. 4 0.2 1E3 0.1 4 SD 1 5 5 3 C..S2 0 K Se ri es Si nu soi da l Pu lse TJ = 1 5 0°C , V RRM = 8 0 0V d v/ d t = 1 0 0 0 V/ µs tp 1E2 1E1 3 .5 10 1 00 10 0 0 1E 2 1E3 1E4 Pulse Basew idth (µs) Ra te Of Fall O f Fo rw ard C urrent - di/dt ( A/µs) Fig. 25 - Recovery Time Characteristics Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1 60 0 I FM = 150 0 A Sine Pu lse 1 40 0 10 00 A 1 20 0 500 A 1 00 0 80 0 60 0 40 0 SD 1 5 5 3 C ..S3 0 K S e rie s TJ = 1 5 0 ° C ; V r > 1 0 0 V 20 0 0 0 50 10 0 1 5 0 2 00 25 0 30 0 Rate O f Fall O f Fo rw ard C urre nt - di/dt (A /µs) Fig. 26 - Recovery Charge Characteristics 20 0 0 10 0 0 4 00 20 0 10 0 5 0 Hz 3000 Peak Forward Current (A) M ax im u m R e v e rse R e c o v e ry C h a rg e - Q rr (µ C ) 10 0 15 0 2 00 25 0 30 0 Rate O f Fa ll O f Fo rward C urren t - di/dt (A/µs) Rate O f Fall O f Fo rw ard Cu rrent - d i/dt ( A/µs) M a x im u m R e v e rse R e c o v e ry T im e - T rr (µ s) I FM = 1 50 0 A Sine Pulse 60 0 40 0 0 6000 10 0 0 0 1E3 15 0 00 2 0 00 0 tp 1E2 1E1 1E2 SD 1 5 5 3 C ..S2 0 K Se ri es Sin uso i da l Pu lse TC = 5 5°C , V RRM = 8 0 0 V d v / dt = 1 00 0V / us 1E 3 1E4 Pulse Basewid th (µs) Fig. 29 - Frequency Characteristics Revision: 11-Jan-18 Document Number: 93169 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1553C..K Series www.vishay.com Vishay Semiconductors 1E4 1E 4 Peak Forward Current (A) Peak Forw ard Current (A) 10 jo ules p er p ulse 6 4 2 1 1E3 0. 8 0 .6 0 .4 SD 1 5 5 3 C ..S2 0 K S eri es Trap e zoi dal Puls e TJ = 1 5 0°C, V RRM = 8 0 0 V d v/ d t = 1 0 0 0 V/ µs d i/d t = 3 0 0 A / µs tp 1E2 1E1 1E2 1E3 2 00 0 6 00 0 1 0 00 0 1E 3 1E2 1E 3 1E4 Pulse Basewidth (µs) Fig. 33 - Frequency Characteristics Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 2000 1 0 00 50 H z 20 0 10 0 6 00 4 0 0 4 Peak Forward Current (A) Peak Forw ard Current (A) tp 20 0 0 0 Pulse Basew idth (µs) 3 00 0 4 00 0 6000 1E3 1 00 0 0 SD 1 5 5 3 C ..S2 0K Se rie s Tr ape z oi dal Pu ls e TC = 5 5°C , V RRM = 8 0 0 V d v /d t = 1 0 0 0V /u s, d i/ dt = 3 0 0 A / us 15 0 0 0 20 0 0 0 tp 1E2 1E3 10 jo ule s p er p ulse 0 .6 0 .4 1E3 0 .2 1E2 1E1 1E4 6 2 1 SD 1 5 5 3 C. .S3 0 K Se r ie s Sin uso id al Pu l se TJ = 1 50° C , V RRM = 1 0 0 0V d v / dt = 1 00 0V / µs tp 1E2 1E 1 1E2 1E3 1E4 Pulse Basew id th (µs) Pulse Basewidth (µs) Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 31 - Frequency Characteristics 1E4 1E4 3000 10 jo ules p er pulse 4 6 Peak Forward Curren t (A) Peak F orward Cu rrent (A) SD 1 55 3C ..S2 0 K Se ri es Tra pez o idal Pu lse TC = 5 5°C , V RRM= 8 0 0 V d v / dt = 1 0 0 0 V/ us, d i/ d t = 1 0 0 A / us 1 50 0 0 1E 2 1E 1 1E4 20 0 1 00 50 Hz 1 0 00 40 0 2 1 0 .8 1E3 0. 6 0. 4 tp 1E2 1E 1 SD 1 5 5 3 C ..S2 0 K S er ie s Tra pe zo id al Pu lse TJ = 1 5 0°C , V RRM = 8 0 0 V d v /d t = 1 0 0 0 V / µs d i/ dt = 1 0 0 A /µ s 1E2 1E3 Pulse Ba sew idth (µs) Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 2 00 0 1 0 00 4 00 20 0 1 00 5 0 Hz 4000 6 00 0 1 0 00 0 tp 1E3 1E 1 1E2 SD 1 5 5 3 C ..S3 0 K Se r ie s Si n uso id al P u lse TC = 5 5°C, VR R M = 1 0 0 0 V dv / d t = 1 0 0 0 V / us 1E3 1E4 P ulse Basewidth (µs) Fig. 35 - Frequency Characteristics Revision: 11-Jan-18 Document Number: 93169 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SD1553C..K Series www.vishay.com Vishay Semiconductors 1E4 1E4 1 0 jo ule s pe r pulse Peak Forward Current (A) Peak Forward Current (A) 1 0 jo u le s pe r pu lse 6 4 2 1E3 1 0 .6 tp 1E2 1E1 0 .8 SD 1 5 5 3 C ..S3 0 K Se rie s Tra pe zo ida l Pu lse TJ = 1 5 0°C , V RRM = 1 0 0 0 V d v /d t = 1 0 0 0 V /µ s d i/ dt = 30 0A / µ s 1E 2 6 4 2 1 1E3 0. 8 0 .6 tp 1E3 SD 1 5 5 3 C..S3 0 K Se rie s Tr ape zo ida l Pu lse TJ = 1 5 0°C , V RRM = 1 0 0 0 V d v / dt = 10 0 0V / µs d i/ d t = 1 0 0 A / µs 1E2 1E1 1E4 1E2 1E 4 2 00 0 50 Hz 20 0 1 00 1 0 0 0 4 00 4 00 0 6000 10 0 0 0 15 0 0 0 20 0 0 0 tp 1E2 SD 1 5 5 3 C ..S3 0 K Se rie s T rape zo i dal Pul se TC = 5 5° C, V RRM = 1 0 0 0 V d v / dt = 10 0 0 V/ u s, d i/ d t = 3 0 0 A / us 1E3 4 00 6 00 Peak Forward Current (A) Peak Forward Current (A) 1E 4 1E 2 1E1 1E4 Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics 1E 3 1E3 Pulse Basew idth (µs) Pulse Basewid th (µs) 100 50 H z 4 0 00 tp SD 1 5 5 3 C.. S3 0 K Se r ie s T rap ez o idal Pul se TC = 5 5°C , V R R M = 1 0 0 0 V d v/ dt = 1 0 0 0 V/ u s, d i/d t = 10 0A / u s 1E 3 1E1 1E 4 20 0 1000 2 00 0 1E 2 1E 3 1E4 Pulse Basew idth (µs) Pulse Ba sew idth (µs) Fig. 39 - Frequency Characteristics Fig. 37 - Frequency Characteristics ORDERING INFORMATION TABLE Device code VS- SD 155 3 C 30 S30 K 1 2 3 4 5 6 7 8 2 - Vishay Semiconductors product Diode 3 - Essential part number 4 - 3 = fast recovery 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - trr code 8 - K = PUK case K-PUK (DO-200AC) 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95247 Revision: 11-Jan-18 Document Number: 93169 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors K-PUK (DO-200AC) DIMENSIONS in millimeters (inches) 74.5 (2.93) DIA. MAX. 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 1 (0.04) MIN. both ends 47.5 (1.87) DIA. MAX. 2 places 27.5 (1.08) MAX. C A 67 (2.64) DIA. MAX. Note: A = Anode C = Cathode Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Revision: 12-Jul-17 Document Number: 95247 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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