VS-SD703C..L Series
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Vishay Semiconductors
Fast Recovery Diodes
(Hockey PUK Version), 700 A, 790 A
FEATURES
• High power fast recovery diode series
• 2.0 μs to 3.0 μs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC® B-PUK (DO-200AB)
B-PUK (DO-200AB)
• Maximum junction temperature 150 °C
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
700 A, 790 A
Package
B-PUK (DO-200AB)
Circuit configuration
Single
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
SD703C..L
TEST CONDITIONS
IF(AV)
Ths
IF(RMS)
IFSM
VRRM
trr
UNITS
S20
S30
700
790
A
55
55
°C
1320
1470
50 Hz
9300
9600
60 Hz
9730
10 050
Range
1200 to 2500
1200 to 2500
V
2.0
3.0
μs
25
25
-40 to +150
-40 to +150
TJ
TJ
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-SD703C..L
VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
12
1200
1300
16
1600
1700
20
2000
2100
25
2500
2600
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
50
Revision: 11-Jan-18
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VS-SD703C..L Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average forward current
at heatsink temperature
Maximum RMS forward current
180° conduction, half sine wave
Double side (single side) cooled
IF(AV)
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
SD703C..L
s20
s30
700 (365) 790 (400)
55 (85)
55 (85)
1320
1470
9300
9600
9730
10 050
7820
8070
8190
8450
432
460
395
420
306
326
279
297
4320
4600
1.00
0.95
1.11
1.05
TEST CONDITIONS
25 °C heatsink temperature double side cooled
t = 10 ms No voltage
t = 8.3 ms reapplied
IFSM
VF(TO)1
VF(TO)2
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
t = 10 ms No voltage
reapplied
t = 8.3 ms
t = 10 ms 100 % VRRM
t = 8.3 ms reapplied
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x x IF(AV) < I < x IF(AV)), TJ = TJ maximum
(I > x IF(AV)), TJ = TJ maximum
rf1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.80
0.60
rf2
(I > x IT(AV)), TJ = TJ maximum
0.76
0.56
VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
2.20
1.85
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
I2t
UNITS
A
°C
A
kA2s
kA2s
V
mW
Maximum forward voltage drop
V
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT TJ = 25 °C
CODE
Ipk
SQUARE
PULSE
(A)
trr AT 25 % IRRM
(μs)
S20
S30
TYPICAL VALUES
AT TJ = 150 °C
TEST CONDITIONS
2.0
3.0
1000
IFM
dI/dt
(A/μs)
50
Vr
(V)
trr AT 25 % IRRM
(μs)
3.5
5.0
-50
Qrr
(μC)
240
380
Irr
(A)
trr
t
dir
dt
110
130
Qrr
IRM(REC)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
and storage temperature range
Maximum thermal resistance,
case junction to heatsink
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJ-hs
DC operation single side cooled
DC operation double side cooled
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
VALUES
UNITS
-40 to 150
°C
0.092
K/W
0.046
9800
N
(1000)
(kg)
250
g
B-PUK (DO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
DOUBLE SIDE
0.011
0.011
0.013
0.014
0.017
0.017
0.024
0.025
0.043
0.043
RECTANGULAR CONDUCTION
SINGLE SIDE DOUBLE SIDE
0.008
0.008
0.013
0.013
0.018
0.018
0.026
0.026
0.043
0.044
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93179
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VS-SD703C..L Series
160
Vishay Semiconductors
SD703C..S20L Series
(Single Side Cooled)
RthJ-hs (DC) = 0.092 K/ W
140
120
100
Conduction Angle
80
60
40
30°
60°
90°
120°
180°
20
0
100
200
300
400
500
600
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
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160
SD703C..S30L Series
(Single Side Cooled)
RthJ-hs (DC) = 0.092 K/ W
140
120
100
Conduc tion Period
80
60
30°
40
20
180°
0
120
100
Conduction Period
80
60
60°
20
180°
DC
0
0 100 200 300 400 500 600 700 800 900
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
SD703C..S20L Series
(Single Side Cooled)
RthJ-hs (DC) = 0.092 K/ W
90°
120°
Conduc tion Angle
80
60°
60
90°
120°
180°
40
20
0
100
200
300
400
500
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
600
Maximum Allowable Heatsink Temperature (°C)
Maximum Allowable Heatsink Temperature (°C)
120
30°
800
1000
SD703C..S20L Series
(Double Side Cooled)
RthJ-hs (DC) = 0.046 K/ W
140
120
100
Conduction Angle
80
60
30°
60°
90°
40
120°
180°
20
0
0
100 200 300 400 500 600 700 800 900
Fig. 5 - Current Ratings Characteristics
SD703C..S30L Series
(Single Side Cooled)
RthJ-hs (DC) = 0.092 K/ W
100
600
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
140
400
160
Average Forward Current (A)
160
200
Fig. 4 - Current Ratings Characteristics
160
40
DC
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
30°
90°
120°
0
Average Forward Current (A)
140
60°
160
SD703C..S20L Series
(Double Side Cooled)
RthJ-hs (DC) = 0.046 K/ W
140
120
100
Conduction Period
80
30°
60
60°
90°
120°
40
180°
20
DC
0
0
200
400
600
800 1000 1200 1400
Average Forward Current (A)
Fig. 6 - Current Ratings Characteristics
Revision: 11-Jan-18
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VS-SD703C..L Series
160
Vishay Semiconductors
SD703C..S30L Series
(Double Side Cooled)
RthJ-hs (DC) = 0.046 K/ W
140
120
100
Conduc tion Angle
80
30°
60
60°
90°
120°
40
180°
20
0
0
200
400
600
800
1000
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
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3000
DC
180°
120°
90°
60°
30°
2500
2000
1000
Conduction Period
500
SD703C..S20L Series
TJ = 150°C
0
0
200
Average Forward Current (A)
160
SD703C..S30L Series
(Double Side Cooled)
RthJ-hs (DC) = 0.046 K/ W
140
120
100
Conduction Period
80
30°
60
60°
90°
120°
40
20
180°
DC
0
0
250
500
750
180°
120°
90°
60°
30°
2000
1500
RMS Limit
1000
Conduction Angle
500
SD703C..S30L Series
TJ = 150°C
0
0
1500
RMS Limit
1000
Conduc tion Angle
500
SD703C..S20L Series
TJ = 150°C
0
0 100 200 300 400 500 600 700 800 900
Average Forward Current (A)
Fig. 9 - Forward Power Loss Characteristics
200
400
600
800
1000
Average Forward Current (A)
Fig. 11 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Maximum Average Forward Power Loss (W)
2000
180°
120°
90°
60°
30°
800 1000 1200 1400
2500
Average Forward Current (A)
2500
600
Fig. 10 - Forward Power Loss Characteristics
1000 1250 1500
Fig. 8 - Current Ratings Characteristics
400
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable Heatsink Temperature (°C)
Fig. 7 - Current Ratings Characteristics
RMS Limit
1500
3000
DC
180°
120°
90°
60°
30°
2500
2000
1500
RMS Limit
1000
Conduction Period
500
SD703C..S30L Series
TJ = 150°C
0
0
400
800
1200
1600
Average Forward Current (A)
Fig. 12 - Forward Power Loss Characteristics
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VS-SD703C..L Series
Vishay Semiconductors
9000
Peak Half Sine Wave Forward Current (A)
Peak Half Sine Wave Forward Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge
8000
Initial TJ = 150 °C
@60 Hz 0.0083 s
7000
@50 Hz 0.0100 s
6000
5000
4000
3000
SD703C..S20L Series
2000
1
10
100
10000
9000
8000
Maximum Non Repetitive Surge Current
Versus Pulse Train Dura tion.
Initial TJ= 150°C
No Voltage Reapplied
Rated VRRM Reapplied
7000
6000
5000
4000
3000
SD703C..S30L Series
2000
0.01
0.1
10000
Maximum Non Repetitive Surge Current
Versus Pulse Train Dura tion.
Initial TJ = 150°C
No Voltage Reapplied
Rated VRRM Reapplied
8000
6000
4000
SD703C..S20L Series
2000
0.01
0.1
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
TJ = 25°C
TJ = 150°C
1000
SD703C..S20L Series
100
0.5
1
Pulse Train Duration (s)
7000
6000
5000
4000
3000
SD703C..S30L Series
2000
1
10
1.5
2
2.5
3
3.5
4
4.5
5
100
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
10000
Instantaneous Forward Current (A)
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 150 °C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
8000
1
Instantaneous Forward Voltage (V)
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
9000
1
Pulse Train Duration (s)
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
TJ = 25°C
TJ = 150°C
1000
SD703C..S30L Series
100
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous Forward Voltage (V)
Fig. 18 - Forward Voltage Drop Characteristics
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VS-SD703C..L Series
Transient Thermal Impedance Z thJ-hs (K/ W)
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Vishay Semiconductors
0.1
SD703C..S20/ S30L Series
Steady State Value
0.01
R thJ-hs = 0.092 K/ W
(Single Side Cooled)
R thJ-hs = 0.046 K/ W
(Double Side Cooled)
(DC Operation)
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
100
TJ = 150°C
FP
Forward Rec overy (V)
80
I
60
TJ = 25°C
40
20
SD703C..S20L Series
0
0
400
800
1200
1600
2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 20 - Typical Forward Recovery Characteristics
100
TJ = 150°C
V
FP
Forward Recovery (V)
80
I
60
TJ = 25°C
40
20
SD703C..S30L Series
0
0
400
800
1200
1600
2000
Rate Of Rise Of Forward Current - di/ dt (A/ us)
Fig. 21 - Typical Forward Recovery Characteristics
6
SD703C..S20L Series
TJ = 150 °C; Vr > 100V
5.5
5
4.5
I FM = 1000 A
Sine Pulse
4
500 A
150 A
3.5
3
2.5
2
10
100
1000
Rate Of Fall Of Forward Current - d i/ dt (A/ µs)
Fig. 22 - Recovery Time Characteristics
Maximum Reverse Rec overy Charge - Qrr (A)
V
Maximum Reverse Rec overy Time - Trr (µs)
Fig. 19 - Thermal Impedance ZthJ-hs Characteristic
800
I FM = 1000 A
Sine Pulse
700
600
500
500 A
400
150 A
300
200
SD703C..S20L Series
TJ = 150 °C; Vr > 100V
100
0
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 23 - Recovery Charge Characteristics
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VS-SD703C..L Series
Vishay Semiconductors
450
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Rec overy Current - Irr (A)
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I FM = 1000 A
400
Sine Pulse
350
500 A
150 A
300
250
200
150
SD703C..S20L Series
TJ = 150 °C; Vr > 100V
100
50
0
0
50 100 150 200 250 300
550
I FM = 1000 A
Sine Pulse
500
450
500 A
400
150 A
350
300
250
200
150
SD703C..S30L Series
TJ = 150 °C; Vr > 100V
100
50
0
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 24 - Recovery Current Characteristics
Fig. 27 - Recovery Current Characteristics
1E4
7
SD703C..S30L Series
TJ = 150 °C; V r > 100V
6.5
6
Peak Forward Current (A)
Maximum Reverse Rec overy Time - Trr (µs)
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
5.5
5
I FM = 1000 A
Sine Pulse
4.5
500 A
4
150 A
3.5
3
1
0.2
1E3
0.1
0.08
1E2
1E1
1000
SD703C..S20L Series
Sinusoidal Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Rate Of Fa ll Of Forward Current - di/d t (A/ µs)
Fig. 25 - Recovery Time Characteristics
Maximum Reverse Recovery Charge - Qrr (µC)
6 10 joules per pulse
0.4
tp
100
4
0.6
2.5
2
10
2
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1100
900
800
700
500 A
600
500
150 A
400
300
SD703C..S30L Series
TJ = 150 °C; Vr > 100V
200
100
0
0
50 100 150 200 250 300
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 26 - Recovery Charge Characteristics
Peak Forward Current (A)
I FM = 1000 A
Sine Pulse
1000
2000 1000 600 400 200
100
3000
50 Hz
4000
6000
1E3
10000
15000
tp
SD703C..S20L Series
Sinusoid al Pulse
TC= 55°C, VRRM = 800V
d v/ d t = 1000V/ us
20000
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 29 - Frequency Characteristics
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VS-SD703C..L Series
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1E4
10 joules per pulse
6
4
2
1
1E3
0.8
0.6
0.4
SD703C..S20L Series
Trapezoidal Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs
d i/ d t = 300A/ µs
tp
1E2
1E1
1E2
Peak Forward Current (A)
Peak Forward Current (A)
1E4
2000
3000
4000
1E3
6000
10000
15000
tp
20000
1E3
1E2
1E1
1E4
50 Hz
200 100
1000 400
1E2
Pulse Basewidth (µs)
SD703C..S20L Series
Trapezoida l Pulse
TC= 55°C, VRRM = 800V
d v/ dt = 1000V/ us,
d i/ d t = 100A/ us
1E3
1E4
Pulse Basewidth (µs)
Fig. 33 - Frequency Characteristics
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E4
100 50 Hz
400 200
1000 600
2000
1E3
3000
4000
6000
SD703C..S20L Series
Trapezoidal Pulse
TC= 55°C, VRRM = 800V
d v/ d t = 1000V/ us,
d i/ d t = 300A/ us
10000
tp
15000
1E2
1E1
1E2
1E3
Pea k Forward Current (A)
Peak Forward Current (A)
10 joules per p ulse
4 6
2
1
0.6
0.4
1E3
0.2
0.1
tp
1E2
1E1
1E4
1E2
Pulse Basewidth (µs)
1E3
1E4
Pulse Basewidth (µs)
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 31 - Frequency Characteristics
1E4
1E4
10 joules per pulse
tp
Peak Forward Current (A)
Peak Forward Current (A)
SD703C..S30L Series
Sinusoidal Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs
6
4
2
1
1E3
0.6
0.4
1500
1E2
200 100 50 Hz
3000
1E3
4000
6000
tp
10000
SD703C..S30L Series
Sinusoid al Pulse
TC= 55°C, VRRM = 800V
d v/ d t = 1000V/ us
15000
SD703C..S20L Series
0.2
Tra pezoidal Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs, di/ dt = 100A/ µs
1E2
1E1
1000 400
2000
20000
1E3
Pulse Basewidth (µs)
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
1E2
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Fig. 35 - Frequency Characteristics
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VS-SD703C..L Series
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Vishay Semiconductors
1E4
4
6
Peak Forward Current (A)
Peak Forward Current (A)
1E4
10 joules per pulse
2
1E3
1
0.8
0.6
0.4
SD703C..S30L Series
Trapezoidal Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs, di/ dt = 300A/ µs
tp
1E2
1E1
1E2
10 joules per pulse
6
4
2
0.8
1E3
0.6
0.4
tp
1E3
1E2
1E1
1E4
SD703C..S30L Series
Trapezoidal Pulse
TJ = 150°C, VRRM = 800V
d v/ d t = 1000V/ µs
d i/ d t = 100A/ µs
1E2
Pulse Basewidth (µs)
1E4
Fig. 38 - Maximum Total Energy Loss
Per Pulse Characteristics
1E4
200
1500
1E3
1000
600
Peak Forward Current (A)
1E4
Peak Forward Current (A)
1E3
Pulse Basewidth (µs)
Fig. 36 - Maximum Total Energy Loss
Per Pulse Characteristics
100 50 Hz
400
2000
3000
4000
6000
10000
tp
1E2
1E1
1
1E2
SD703C..S30L Series
Trapezoida l Pulse
TC= 55°C, VRRM = 800V
d v/ dt = 1000V/ us,
d i/ d t = 300A/ us
1E3
1500
2000
200 100 50 Hz
1000 400
3000
1E3
4000
6000
10000
tp
15000
1E2
1E1
1E4
1E2
Pulse Basewidth (µs)
SD703C..S30L Series
Trapezoid al Pulse
TC= 55°C, VRRM = 800V
d v/ dt = 1000V/ us,
d i/ d t = 100A/ us
1E3
1E4
Pulse Basewidth (µs)
Fig. 39 - Frequency Characteristics
Fig. 37 - Frequency Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
SD
70
3
C
25
S20
L
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Diode
3
-
Essential part number
4
-
3 = fast recovery
5
-
C = ceramic PUK
6
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
7
-
trr code
8
-
L = PUK case B-PUK (DO-200AB)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95246
Revision: 11-Jan-18
Document Number: 93179
9
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
B-PUK (DO-200AB)
DIMENSIONS in millimeters (inches)
58.5 (2.30) DIA. MAX.
3.5 (0.14) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
0.8 (0.03)
both ends
34 (1.34) DIA. MAX.
2 places
25.4 (1)
26.9 (1.06)
C
A
53 (2.09) DIA. MAX.
Note:
A = Anode
C = Cathode
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Revision: 12-Jul-17
Document Number: 95246
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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