SD703C16L

SD703C..L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 700/790 A FEATURES • • • • • • • • • • • • 700/790 A DO-200AB (B-PUK) High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 2500 V RoHS COMPLIANT High current capability Optimized turn-on and turn-off characteristics Low forward recovery Fast and soft reverse recovery Press PUK encapsulation Case style conform to JEDEC DO-200AB (B-PUK) Maximum junction temperature 150 °C Lead (Pb)-free Designed and qualified for industrial level PRODUCT SUMMARY IF(AV) TYPICAL APPLICATIONS • Snubber diode for GTO • High voltage freewheeling diode • Fast recovery rectifier applications MAJOR RATINGS AND CHARACTERISTICS SD703C..L PARAMETER TEST CONDITIONS S20 700 IF(AV) IF(RMS) IFSM VRRM trr TJ 50 Hz 60 Hz Range 2.0 TJ 25 - 40 to 150 Ths 55 1320 9300 9730 1200 to 2500 3.0 S30 790 55 1470 9600 10 050 V µs °C A UNITS A °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 12 SD703C..L 16 20 25 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 1200 1600 2000 2500 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1300 1700 2100 2600 50 IRRM MAXIMUM AT TJ = TJ MAXIMUM mA Document Number: 93179 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 SD703C..L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 700/790 A SD703C..L S20 700 (365) 55 (85) 1320 9300 9730 7820 Sinusoidal half wave, initial TJ = TJ maximum 8190 432 395 306 279 4320 1.00 1.11 0.80 0.76 2.20 S30 790 (400) 55 (85) 1470 9600 10 050 8070 8450 460 420 326 297 4600 0.95 1.05 0.60 mΩ rf2 VFM (I > π x IT(AV)), TJ = TJ maximum Ipk = 1500 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 0.56 1.85 V kA2√s V kA2s A FORWARD CONDUCTION PARAMETER Maximum average forward current at heatsink temperature Maximum RMS forward current SYMBOL TEST CONDITIONS 180° conduction, half sine wave Double side (single side) cooled 25 °C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing I 2 √t VF(TO)1 VF(TO)2 rf1 No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied UNITS A °C IF(AV) IF(RMS) t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (I > π x IF(AV)), TJ = TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ = TJ maximum Low level value of threshold voltage High level value of threshold voltage Low level value of forward slope resistance High level value of forward slope resistance Maximum forward voltage drop RECOVERY CHARACTERISTICS MAXIMUM VALUE AT TJ = 25 °C CODE trr AT 25 % IRRM (µs) 2.0 3.0 TEST CONDITIONS Ipk SQUARE PULSE (A) 1000 TYPICAL VALUES AT TJ = 150 °C IFM dI/dt (A/µs) Vr (V) trr AT 25 % IRRM (µs) 3.5 5.0 Qrr (µC) 240 380 Irr (A) dir dt trr t Qrr IRM(REC) S20 S30 50 - 50 110 130 THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, case junction to heatsink Mounting force, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ, TStg RthJ-hs DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 150 0.092 0.046 9800 (1000) 250 UNITS °C K/W N (kg) g DO-200AB (B-PUK) www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93179 Revision: 14-May-08 SD703C..L Series Fast Recovery Diodes (Hockey PUK Version), 700/790 A ΔRthJ-hs CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION SINGLE SIDE 0.011 0.013 0.017 0.024 0.043 DOUBLE SIDE 0.011 0.014 0.017 0.025 0.043 RECTANGULAR CONDUCTION SINGLE SIDE 0.008 0.013 0.018 0.026 0.043 DOUBLE SIDE 0.008 0.013 0.018 0.026 0.044 TJ = TJ maximum K/W TEST CONDITIONS UNITS Vishay High Power Products Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Maximum Allowable Heatsink T emperature (°C) Maximum Allowable Heatsink T emperature (°C) 160 140 120 100 80 60 40 S D703C..S20L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.092 K/ W 160 140 120 100 80 S D703C..S 30L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.092 K/ W Conduction Angle Conduc tion Angle 30° 60 40 20 0 100 200 60° 90° 120° 180° 30° 20 0 100 200 60° 300 90° 120° 180° 500 600 400 300 400 500 600 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 3 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (°C) Maximum Allowable Heats T ink emperature (°C) 160 140 120 100 Conduction Period 160 140 120 100 Conduc tion Period S D703C..S 20L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.092 K/ W S D703C..S 30L S eries (S ingle S ide Cooled) RthJ-hs (DC) = 0.092 K/ W 80 60 40 20 0 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A) 30° 60° 90° 120° 180° DC 80 60 40 20 0 0 200 400 600 800 1000 Average Forward Current (A) 30° 60° 90° 120° 180° DC Fig. 2 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Document Number: 93179 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 SD703C..L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 700/790 A Maximum Allowable Heatsink T emperature (°C) 160 140 120 100 Conduction Period Maximum Allowable Heatsink T emperature (°C) 160 140 120 100 S D703C..S 20L S eries (Double S Cooled) ide RthJ-hs (DC) = 0.046 K/ W S D703C..S 30L S eries (Double S ide Cooled) RthJ-hs (DC) = 0.046 K/ W Conduction Angle 80 60 40 20 0 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A) 30° 60° 80 30° 60 40 20 0 0 250 500 750 1000 1250 1500 Average Forward Current (A) 60° 90° 120° 180° DC 90° 120° 180° Fig. 5 - Current Ratings Characteristics Fig. 8 - Current Ratings Characteristics Maximum Allowable Heatsink T emperature (°C) 140 120 100 S D703C..S 20L S eries (Double S ide Cooled) RthJ-hs (DC) = 0.046 K/ W Maximum Average Forward Power Loss (W) 160 2500 2000 Conduction Period 1500 180° 120° 90° 60° 30° RMS Limit 80 60 40 20 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) 30° 60° 90° 120° 180° DC 1000 Conduc tion Angle 500 S D703C..S 20L S eries TJ = 150°C 0 100 200 300 400 500 600 700 800 900 Average Forward Current (A) 0 Fig. 6 - Current Ratings Characteristics Fig. 9 - Forward Power Loss Characteristics Maximum Allowable Heatsink T emperature (°C) 160 140 120 100 S D703C..S 30L Series (Double S ide Cooled) RthJ-hs (DC) = 0.046 K/ W Maximum Average Forward Power Loss (W) 3000 2500 2000 1500 1000 500 0 0 200 400 600 800 1000 1200 1400 Average Forward Current (A) DC 180° 120° 90° 60° 30° RMS Limit Conduc tion Angle 80 60 40 20 0 0 200 400 600 800 1000 Average Forward Current (A) 30° 60° 90° 120° 180° Conduction Period S D703C..S 20L S eries TJ = 150°C Fig. 7 - Current Ratings Characteristics Fig. 10 - Forward Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93179 Revision: 14-May-08 SD703C..L Series Fast Recovery Diodes (Hockey PUK Version), 700/790 A Maximum Average Forward Power Loss (W) Vishay High Power Products Peak Half S Wave Forward Current (A) ine 2500 180° 120° 90° 60° 30° RMS Limit 10000 2000 8000 Maximum Non Repetitive S urge Current Versus Pulse T rain Dura tion. Initial T = 150°C J No Voltage Reapplied Rated VRRM Reapplied 1500 6000 1000 Conduction Angle 500 4000 S D703C..S 20L S eries 2000 0.01 0.1 Pulse T rain Duration (s) 1 S D703C..S 30L S eries T = 150°C J 0 200 400 600 800 1000 0 Average Forward Current (A) Fig. 11 - Forward Power Loss Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Maximum Average Forward Power Loss (W) Peak Half S Wave F ine orward Current (A) 3000 2500 2000 1500 1000 500 0 0 400 800 1200 1600 Average Forward Current (A) DC 180° 120° 90° 60° 30° RMS Limit 9000 8000 7000 6000 5000 4000 3000 At Any Rated Load Condition And With R ated VRRM Applied Following S urge. Initial T = 150 °C J @60 Hz 0.0083 s @50 Hz 0.0100 s Conduction Period S D703C..S 30L S eries T = 150°C J S D703C..S 30L S eries 2000 1 10 100 Number Of Equal Amplitude Half Cyc le Current Pulses (N) Fig. 12 - Forward Power Loss Characteristics Fig. 15 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10000 9000 8000 7000 6000 5000 4000 3000 2000 0.01 S D703C..S 30L S eries Peak Half S Wave Forward Current (A) ine Peak Half S Wave Forward Current (A) ine 9000 At Any Rated Load Condition And With Rated VRRM Applied Following S urge 8000 Initial T = 150 °C J @60 Hz 0.0083 s 7000 @50 Hz 0.0100 s 6000 5000 4000 3000 S D703C..S 20L S eries 2000 1 10 100 Number Of Equa l Amplitude Half Cycle Current Pulses (N) Maximum Non Repetitive S urge Current Versus Pulse T rain Dura tion. Initial T = 150°C J No Voltage Reapplied Rated VRRM Reapplied 0.1 Pulse T rain Duration (s) 1 Fig. 13 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 16 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Document Number: 93179 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 SD703C..L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 700/790 A 10000 Instantaneous Forward Current (A) T = 25°C J 10000 Instantaneous Forward Current (A) T = 25°C J T = 150°C J 1000 T = 150°C J 1000 S D703C..S 20L S eries S D703C..S 30L S eries 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 100 0.5 1 1.5 2 2.5 3 3.5 4 Instantaneous Forward Voltage (V) Instantaneous Forward Voltage (V) Fig. 17 - Forward Voltage Drop Characteristics Fig. 18 - Forward Voltage Drop Characteristics T ransient T hermal Impedance Z thJ-hs (K/ W) 0.1 S D703C..S S 20/ 30L S eries 0.01 S teady S tate Value R thJ-hs = 0.092 K/ W (S ingle S Cooled) ide R thJ-hs = 0.046 K/ W (Double S Cooled) ide (DC Operation) 0.001 0.001 0.01 0.1 1 10 100 S quare Wave Pulse Duration (s) Fig. 19 - Thermal Impedance ZthJ-hs Characteristic 100 V FP 100 T = 150°C J I V FP T = 150°C J I 80 Forward Rec overy (V) 80 F orward Recovery (V) 60 T = 25°C J 60 40 40 T = 25°C J 20 S D703C..S 20L S eries 0 0 400 800 1200 1600 2000 Rate Of Rise Of Forward Current - di/ dt (A/ us) 20 S D703C..S 30L S eries 0 0 400 800 1200 1600 2000 R ate Of R Of Forward Current - di/ dt (A/ us) ise Fig. 20 - Typical Forward Recovery Characteristics Fig. 21 - Typical Forward Recovery Characteristics www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93179 Revision: 14-May-08 SD703C..L Series Fast Recovery Diodes (Hockey PUK Version), 700/790 A Maximum R everse Rec overy T ime - T (µs) rr 6 5.5 5 4.5 4 3.5 3 2.5 2 10 I FM = 1000 A S Pulse ine 500 A 150 A Vishay High Power Products S D703C..S S 20L eries T = 150 °C; Vr > 100V J Maximum Revers Rec overy T e ime - T (µs) rr 7 6.5 6 5.5 5 4.5 4 3.5 3 2.5 2 10 100 1000 I FM = 1000 A S Pulse ine 500 A 150 A S D703C..S S 30L eries T = 150 °C; V r > 100V J 100 1000 Rate Of Fall Of Forward Current - d i/ dt (A/ µs) Rate Of Fa ll Of Forward Current - di/d t (A/ µs) Fig. 22 - Recovery Time Characteristics Fig. 25 - Recovery Time Characteristics 800 700 600 500 400 150 A 500 A I FM = 1000 A S ine Pulse Maximum Revers R e ecovery Charge - Qrr (µC) Maximum R everse Rec overy Charge - Qrr (A) 1100 1000 900 800 700 600 500 400 300 200 100 0 0 50 100 150 200 250 300 S D703C..S 30L S eries T = 150 °C; Vr > 100V J 150 A 500 A I FM = 1000 A S Pulse ine 300 200 100 0 0 50 100 150 200 250 300 S D703C..S 20L S eries T = 150 °C; Vr > 100V J Rate Of Fall Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 23 - Recovery Charge Characteristics Fig. 26 - Recovery Charge Characteristics Maximum R everse Rec overy Current - Irr (A) 400 350 300 250 200 150 100 50 0 0 I FM = 1000 A S ine Pulse 500 A 150 A Maximum Revers R e ecovery Current - Irr (A) 450 550 500 450 400 350 300 250 200 150 100 50 0 0 50 100 150 200 250 300 S D703C..S 30L S eries T = 150 °C; Vr > 100V J I FM = 1000 A S ine Pulse 500 A 150 A S D703C..S 20L S eries T = 150 °C; Vr > 100V J 50 100 150 200 250 300 Rate Of Fall Of Forward Current - di/ dt (A/ µs) Rate Of Fall Of Forward Current - di/ dt (A/ µs) Fig. 24 - Recovery Current Characteristics Fig. 27 - Recovery Current Characteristics Document Number: 93179 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 SD703C..L Series Vishay High Power Products Fast Recovery Diodes (Hockey PUK Version), 700/790 A 1E4 4 6 10 joules per pulse 1E4 Peak F orward Current (A) 0.6 0.4 Peak Forward Current (A) 1 2 100 50 Hz 400 200 1000 600 2000 1E3 0.2 0.1 0.08 S D703C..S 20L Series S inusoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs 1E3 4000 6000 10000 15000 3000 tp tp S D703C..S 20L S eries T rapezoidal Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us, d i/ d t = 300A/ us 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 28 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 Fig. 31 - Frequency Characteristics Peak Forward Current (A) Peak Forward Current (A) 2000 1000 600 400 200 3000 4000 6000 10 joules per pulse tp 6 4 2 100 50 Hz 1E3 10000 15000 tp 20000 S D703C..S 20L S eries S inusoid al Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us 1E3 1 0.6 0.4 S D703C..S 20L S eries 0.2 T pezoidal Pulse ra T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs, di/ dt = 100A/ µs 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 29 - Frequency Characteristics Fig. 32 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 Peak Forward Current (A) 6 4 2 1 Peak Forward Current (A) 10 joules per pulse 1E3 0.6 0.4 0.8 1E3 2000 3000 4000 6000 10000 15000 20000 50 Hz 200 100 1000 400 tp S D703C..S 20L S eries T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs d i/ d t = 300A/ µs tp S D703C..S 20L S eries T rapezoida l Pulse T = 55°C, VRRM = 800V C d v/ dt = 1000V/ us, d i/ d t = 100A/ us 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 30 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 33 - Frequency Characteristics www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 93179 Revision: 14-May-08 SD703C..L Series Fast Recovery Diodes (Hockey PUK Version), 700/790 A 1E4 10 joules per p ulse 46 Vishay High Power Products 1E4 Pea k Forward Current (A) 2 1 0.6 0.4 Peak F orward Current (A) 200 1500 1000 600 400 100 50 Hz 1E3 0.2 0.1 1E3 2000 3000 4000 6000 10000 tp S D703C..S 30L Series T rapezoida l Pulse T = 55°C, VRRM = 800V C d v/ dt = 1000V/ us, d i/ d t = 300A/ us tp S D703C..S 30L S eries S inusoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 Fig. 37 - Frequency Characteristics 1E4 Peak Forward Current (A) 1500 2000 3000 1000 400 200 100 50 Hz Peak Forward Current (A) 10 joules per pulse 6 4 2 1 1E3 4000 6000 10000 15000 20000 tp S D703C..S 30L S eries S inusoid al Pulse T = 55°C, VRRM = 800V C d v/ d t = 1000V/ us 1E3 0.6 0.4 0.8 tp 1E2 1E1 1E2 1E3 1E4 1E2 1E1 S D703C..S 30L S eries T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs d i/ d t = 100A/ µs 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 35 - Frequency Characteristics Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics 1E4 1E4 Peak Forward Current (A) 4 2 6 10 joules per pulse Peak Forward Current (A) 1500 2000 200 100 50 Hz 1000 400 1E3 0.8 0.6 0.4 1 1E3 3000 4000 6000 S D703C..S 30L S eries T rapezoid al Pulse T = 55°C, VRRM = 800V C d v/ dt = 1000V/ us, d i/ d t = 100A/ us tp S D703C..S 30L Series T rapezoidal Pulse T = 150°C, VRRM = 800V J d v/ d t = 1000V/ µs, di/ dt = 300A/ µs 10000 tp 15000 1E2 1E1 1E2 1E3 1E4 1E2 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 39 - Frequency Characteristics Document Number: 93179 Revision: 14-May-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 9 SD703C..L Series Vishay High Power Products ORDERING INFORMATION TABLE Fast Recovery Diodes (Hockey PUK Version), 700/790 A Device code SD 1 1 2 3 4 5 6 7 - 70 2 3 3 C 4 25 5 S20 6 L 7 Diode Essential part number 3 = Fast recovery C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) trr code L = PUK case DO-200AB (B-PUK) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95246 www.vishay.com 10 For technical questions, contact: ind-modules@vishay.com Document Number: 93179 Revision: 14-May-08 Outline Dimensions Vishay Semiconductors DO-200AB (B-PUK) DIMENSIONS in millimeters (inches) 3.5 (0.14) DIA. NOM. x 1.8 (0.07) deep MIN. both ends 58.5 (2.30) DIA. MAX. 0.8 (0.03) both ends 34 (1.34) DIA. MAX. 2 places 26.9 (1.06) 25.4 (1) 53 (2.09) DIA. MAX. Quote between upper and lower pole pieces has to be considered after application of mounting force (see Thermal and Mechanical Specifications) Document Number: 95246 Revision: 05-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000