VS-ST303SP Series
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Vishay Semiconductors
Inverter Grade Thyristors
(Stud Version), 300 A
FEATURES
• Center amplifying gate
• High surge current capability
• Low thermal impedance
• High speed performance
TO-118 (TO- 209AE)
• Compression bonding
• Designed and qualified for industrial level
PRIMARY CHARACTERISTICS
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
IT(AV)
300 A
VDRM/VRRM
400 V, 800 V, 1200 V
VTM
2.16 V
TYPICAL APPLICATIONS
ITSM at 50 Hz
3000 A
• Inverters
ITSM at 60 Hz
3150 A
• Choppers
IGT
200 mA
• Induction heating
TJ
-40 °C to 125 °C
TC
65 °C
Package
TO-118 (TO-209AE)
Circuit configuration
Single SCR
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IT(AV)
TC
IT(RMS)
VALUES
UNITS
300
A
65
°C
471
ITSM
I2t
50 Hz
7950
60 Hz
8320
50 Hz
316
60 Hz
288
VDRM/VRRM
A
kA2s
400 to 1200
V
tq
10 to 20
μs
TJ
-40 to 125
°C
IDRM/IRRM MAXIMUM AT
TJ = TJ MAXIMUM
mA
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VS-ST303S
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE
PEAK VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
50
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VS-ST303SP Series
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CURRENT CARRYING CAPABILITY
ITM
FREQUENCY
ITM
180° el
ITM
UNITS
100 µs
180° el
50 Hz
670
470
1050
940
5240
4300
400 Hz
480
330
1021
710
1800
1270
1000 Hz
230
140
760
470
730
430
2500 Hz
35
-
150
-
90
Recovery voltage VR
Voltage before turn-on VD
50
50
VDRM
VDRM
VDRM
50
Case temperature
40
Equivalent values for RC circuit
-
50
Rise of on-state current dI/dt
65
10/0.47
40
A
V
65
10/0.47
40
A/μs
65
°C
μF
10/0.47
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
TEST CONDITIONS
180° conduction, half sine wave
DC at 45 °C case temperature
t = 10 ms
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I2t for fusing
I2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
UNITS
300
A
65
°C
471
7950
No voltage
reapplied
100 % VRRM
reapplied
VALUES
8320
A
6690
Sinusoidal half wave,
initial TJ = TJ maximum
7000
316
288
224
100 % VRRM
reapplied
204
Maximum I2t for fusing
I2t
t = 0.1 ms to 10 ms, no voltage reapplied
3160
Maximum peak on-state voltage
VTM
ITM = 1255 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
2.16
Low level value of threshold voltage
VT(TO)1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
1.44
High level value of threshold voltage
VT(TO)2
(I > x IT(AV)), TJ = TJ maximum
1.46
Low level value of forward slope resistance
rt1
(16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum
0.57
High level value of forward slope
resistance
rt2
(I > x IT(AV)), TJ = TJ maximum
0.56
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A
1000
kA2s
kA2s
V
m
mA
SWITCHING
PARAMETER
SYMBOL
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time
VALUES
UNITS
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
1000
A/μs
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source
0.80
tq
TJ = TJ maximum,
ITM = 550 A, commutating dI/dt = 40 A/μs
VR = 50 V, tp = 500 μs, dV/dt = 200 V/μs
dI/dt
minimum
Maximum turn-off time
maximum
TEST CONDITIONS
10
μs
20
Revision: 22-Aug-17
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VS-ST303SP Series
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BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
500
V/μs
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
Maximum peak reverse and off-state leakage
current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TRIGGERING
PARAMETER
Maximum peak gate power
PGM
Maximum average gate power
PG(AV)
Maximum peak positive gate current
IGM
Maximum peak positive gate voltage
+VGM
Maximum peak negative gate voltage
-VGM
Maximum DC gate current required to trigger
IGT
Maximum DC gate voltage required to trigger
VGT
Maximum DC gate current not to trigger
IGD
Maximum DC gate voltage not to trigger
VGD
60
TJ = TJ maximum, f = 50 Hz, d% = 50
10
10
TJ = TJ maximum, tp 5 ms
20
5
200
TJ = 25 °C, VA = 12 V, Ra = 6
TJ = TJ maximum, rated VDRM applied
W
A
V
mA
3
V
20
mA
0.25
V
VALUES
UNITS
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum operating junction temperature range
Maximum storage temperature range
TEST CONDITIONS
TJ
-40 to +125
TStg
-40 to +150
°C
Maximum thermal resistance, junction to case
RthJC
DC operation
0.10
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.03
Non-lubricated threads
48.5
(425)
N·m
(lbf · in)
535
g
Mounting force, ± 10 %
Approximate weight
Case style
See dimensions - link at the end of datasheet
K/W
TO-118 (TO-209AE)
RthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
180°
0.011
0.008
120°
0.013
0.014
90°
0.017
0.018
60°
0.025
0.026
30°
0.041
0.042
TEST CONDITIONS
UNITS
TJ = TJ maximum
K/W
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Revision: 22-Aug-17
Document Number: 94375
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VS-ST303SP Series
Vishay Semiconductors
130
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
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ST303SSeries
RthJC (DC) = 0.10 K/ W
120
110
Conduc tion Angle
100
90
30°
60°
80
90°
120°
70
180°
60
0
50
100
150
200
250 300
350
130
ST303SSeries
R
(DC) = 0.10 K/ W
120
thJC
110
100
Conduction Period
90
80
70
30°
60°
60
90°
120°
50
0
100
200
300
DC
400
500
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
600
R
0.5 K
/
ta
el
-D
100
ST303SSeries
TJ = 125°C
W
K/
Conduction Angle
01
0.
200
=
RMSLimit
300
SA
400
0.
06
K/
W
0.
08
K/
W
0.
12
K/
W
0.1
6K
/W
0.2
K/
W
0.3
K/ W
W
K/
180°
120°
90°
60°
30°
500
h
R t
03
0.
Maximum Average On-state Power Loss (W)
180°
40
W
0
0
50
100
150
200
250
25
300
Average On-state Current (A)
50
75
100
125
Maximum Allowab le Ambient Temperature (°C)
Maximum Average On-state Power Loss (W)
Fig. 3 - On-State Power Loss Characteristics
900
DC
180°
120°
90°
60°
30°
800
700
600
R
th
S
A =
0.
0.
03
01
K/
K/
W
W
0.
06
-D
K/
el
W
ta
500
0.1
2
400
RMSLimit
300
200
Conduction Period
ST303SSeries
TJ = 125°C
100
R
K/ W
0.2
K/ W
0.3
K/ W
0.5 K
/W
0
0
25
50 100 150 200 250 300 350 400 450 500
Average On-state Current (A)
50
75
100
125
Maximum Allowab le Ambient Temperature (°C)
Fig. 4 - On-State Power Loss Characteristics
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VS-ST303SP Series
7000
Vishay Semiconductors
Transient Thermal Impedance Z thJC (K/ W)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
6500
6000
5500
5000
4500
4000
ST303S Series
3500
3000
1
10
100
1
Steady State Value
RthJC = 0.10 K/ W
(DC Operation)
0.1
0.01
ST303SSeries
0.001
0.001
8000
Maximum Non Repetitive Surge Current
7500
Versus Pulse Train Duration. Control
Of Conduc tion May Not Be Maintained.
7000
Initial TJ = 125°C
No Voltage Reapplied
6500
Rated VRRM Reapplied
6000
5500
5000
4500
4000
ST303SSeries
3500
3000
0.01
0.1
1
Pulse Train Duration (s)
TJ = 25°C
TJ = 125°C
ST303S Series
100
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
8
Maximum Reverse Rec overy Current - Irr (A)
Instantaneous On-state Current (A)
1000
3
10
320
I
TM
300
280
260
= 500 A
300 A
200 A
100 A
50 A
240
220
200
180
160
ST303S Series
TJ = 125 °C
140
120
100
80
10
20 30
40 50
60 70 80
90 100
Fig. 9 - Reverse Recovered Charge Characteristics
10000
2
1
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
0.1
Fig. 8 - Thermal Impedance ZthJC Characteristics
Maximum Reverse Recovery Charge - Qrr (µC)
Peak Half Sine Wave On-state Current (A)
Fig. 5 - Maximum Non-Repetitive Surge Current
0.01
Square Wave Pulse Duration (s)
Numb er Of Eq ual Amplitude Half Cycle Current Pulses (N)
180
160
140
ITM = 500 A
300 A
200 A
100 A
50 A
120
100
80
ST303S Series
TJ = 125 °C
60
40
20
10
20 30
40 50
60 70 80 90 100
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
Fig. 10 - Reverse Recovery Current Characteristics
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Pea k On-state Current (A)
1E4
500
1000
1E3
50 Hz
400 200 100
1000
1500
Snubb er circ uit
Rs = 10 ohms
Cs = 0.47 µF
V D = 80% VDRM
2000
2500
1E2
1E1
1E1
1E2
1E3
1E4
50 Hz
ST303SSeries
Sinusoidal pulse
TC = 65°C
tp
1E1
100
Snubber circuit
R s = 10 ohms
C s = 0.47 µF
V D = 80% VDRM
1500
ST303S Series
Sinusoida l pulse
TC = 40°C
tp
400 200
500
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 11 - Frequency Characteristics
Peak On-state Current (A)
1E4
1E3
500
400 200
100
50 Hz
400
1000
2000
Snub b er c ircuit
R s = 10 ohms
C s = 0.47 µF
V D = 80% VDRM
1500
2500
1E1
2000
ST303SSeries
Trap ezoid al p ulse
TC = 40°C
d i/ dt = 50A/ µs
1E0
1E1
50 Hz
1000
Snub ber c ircuit
R s = 10 ohms
C s = 0.47 µF
V D = 80% VDRM
1500
1E2
100
200
500
1E2
1E3
1E4
1E1
ST303SSeries
Tra p ezoida l pulse
TC = 65°C
di/ d t = 50A/µs
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 12 - Frequency Characteristics
Peak On-sta te Current (A)
1E4
1E3
400
200 100
50 Hz
400
500
1000
Snub ber circ uit
Rs = 10 ohms
Cs = 0.47 µF
V D = 80% VDRM
1500
2000
1E1
1E2
50 Hz
2000
ST303S Series
Tra pezoid al p ulse
TC = 40°C
di/ d t = 100A/ µs
1E3
Snubber c irc uit
R s = 10 ohms
C s = 0.47 µF
V D = 80% VDRM
1500
2500
tp
1E0
1E1
100
500
1000
1E2
200
ST303S Series
Trapezoidal pulse
TC = 65°C
di/ dt = 100A/ µs
tp
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 13 - Frequency Characteristics
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Peak On-state Current (A)
1E5
tp
1E4
ST303SSeries
Rectangular pulse
di/ dt = 50A/ µs
20 joules p er pulse
3
5
20 joules per pulse
10
10
5
2
1
1E3
3
2
1
0.5
0.4
0.5
1E2
ST303SSeries
Sinusoidal pulse
tp
1E1
1E1
0.4
1E2
1E3
1E1
1E4
1E2
1E3
1E4
Pulse Basewidth (µs)
Pulse Basewidth (µs)
Fig. 14 - Maximum On-State Energy Power Loss Characteristics
Rec tangular gate pulse
a) Recommended load line for
rated di/ dt : 20V, 10ohms; tr