VS-ST333S08PFL0P

VS-ST333SP Series www.vishay.com Vishay Semiconductors Inverter Grade Thyristors (Stud Version), 330 A FEATURES • Center amplifying gate • High surge current capability • Low thermal impedance TO-118 (TO- 209AE) • High speed performance • Compression bonding PRIMARY CHARACTERISTICS • Designed and qualified for industrial level IT(AV) 330 A VDRM/VRRM 400 V, 800 V • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 VTM 1.96 V ITSM at 50 Hz 11 000 A TYPICAL APPLICATIONS ITSM at 60 Hz 11 520 A • Inverters IGT 200 mA • Choppers TJ -40 °C to +125 °C TC 75 °C Package TO-118 (TO-209AE) Circuit configuration Single SCR • Induction heating • All types of force-commutated converters   MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) VALUES UNITS 330 A 75 °C 518 ITSM I2t 50 Hz 11 000 60 Hz 11 520 50 Hz 605 60 Hz 550 VDRM/VRRM A kA2s 400 to 800 V tq 15 μs TJ -40 to +125 °C IDRM/IRRM MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST333S VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 50 Revision: 28-Aug-17 Document Number: 94377 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333SP Series www.vishay.com Vishay Semiconductors CURRENT CARRYING CAPABILITY ITM FREQUENCY ITM 180° el ITM 100 µs 180° el 50 Hz 840 600 1280 1040 5430 4350 400 Hz 650 450 1280 910 2150 1560 1000 Hz 430 230 1090 730 1080 720 2500 Hz 140 60 490 250 400 Recovery voltage VR Voltage before turn-on VD Case temperature 50 50 VDRM VDRM VDRM 50 - 50 Equivalent values for RC circuit 75 10/0.47 V - 50 75 10/0.47 A 190 50 Rise of on-state current dI/dt UNITS A/μs 50 75 °C /μF 10/0.47 ON-STATE CONDUCTION PARAMETER Maximum average on-state  current at case temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180° conduction, half sine wave DC at 63 °C case temperature t = 10 ms Maximum peak, one half cycle,  non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms No voltage reapplied UNITS 330 A 75 °C 518 11 000 No voltage reapplied 100 % VRRM  reapplied VALUES 11 520 A 9250 Sinusoidal half wave, initial TJ = TJ maximum 9700 605 550 430 100 % VRRM  reapplied 390 Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 6050 Maximum peak on-state voltage VTM ITM = 1810 A, TJ = TJ maximum,  tp = 10 ms sine wave pulse 1.96 Low level value of threshold voltage VT(TO)1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.91 High level value of threshold voltage VT(TO)2 (I >  x IT(AV)), TJ = TJ maximum 0.92 Low level value of forward slope resistance rt1 (16.7 % x  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum 0.58 High level value of forward slope resistance rt2 (I >  x IT(AV)), TJ = TJ maximum 0.58 Maximum holding current IH TJ = 25 °C, IT > 30 A 600 Typical latching current IL TJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000 kA2s kA2s V m mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS TJ = TJ maximum, VDRM = Rated VDRM ITM = 2 x dI/dt VALUES UNITS 1000 A/μs Typical delay time td TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs Resistive load, gate pulse: 10 V, 5  source 1.0 Maximum turn-off time tq TJ = TJ maximum,  ITM = 550 A, commutating dI/dt = 40 A/μs VR = 50 V, tp = 500 μs, dV/dt = 200 V/μs 15 μs Revision: 28-Aug-17 Document Number: 94377 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333SP Series www.vishay.com Vishay Semiconductors BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,  higher value available on request Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES UNITS 500 V/μs 50 mA VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage +VGM Maximum peak negative gate voltage -VGM Maximum DC gate current required to trigger IGT Maximum DC gate voltage required to trigger VGT Maximum DC gate current not to trigger IGD Maximum DC gate voltage not to trigger VGD TEST CONDITIONS 60 TJ = TJ maximum, f = 50 Hz, d% = 50 10 10 TJ = TJ maximum, tp  5 ms 20 5 200 TJ = 25 °C, VA = 12 V, Ra = 6  TJ = TJ maximum, rated VDRM applied W A V mA 3 V 20 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to +125 TStg -40 to +150 °C Maximum thermal resistance, junction to case RthJC DC operation 0.10 Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth, flat and greased 0.03 Non-lubricated threads 48.5 (425) N·m (lbf · in) 535 g Mounting torque, ± 10 % Approximate weight Case style See dimensions - link at the end of datasheet K/W TO-118 (TO-209AE) RthJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180° 0.011 0.008 120° 0.013 0.014 90° 0.017 0.018 60° 0.025 0.026 30° 0.041 0.042 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC   Revision: 28-Aug-17 Document Number: 94377 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333SP Series Vishay Semiconductors 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) www.vishay.com ST333SSeries RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Angle 100 30° 90 60° 90° 120° 80 180° 70 0 50 100 150 200 250 300 350 130 ST333SSeries RthJC (DC) = 0.10 K/ W 120 110 Conduc tion Period 100 90 80 30° 90° 120° 180° 60 0 100 200 300 400 DC 500 600 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 500 A = /W 1K 0.0 ta el -D R RMS Limit 250 hS R t 300 W K/ 350 K/ W 0. 12 K/ W 0.1 6K / 0.2 W K/ W 03 0. 400 0. 08 W K/ 180° 120° 90° 60° 30° 450 06 0. Maximum Average On-state Power Loss (W) 60° 70 0.3 K/ W 200 Conduction Angle 150 100 0.5 K/ W ST333S Series TJ = 125°C 50 0 0 50 100 150 200 250 300 Average On-state Current (A) 350 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) 700 K/ W 300 RMSLimit 0.2 K/ W K/ W R Conduc tion Period 200 ta el -D 0.1 2 W K/ 400 01 0. K/ W = 500 0. 03 0. 06 SA th DC 180° 120° 90° 60° 30° 600 R Maximum Average On-state Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 0.3 K/ W 0. 5 K / W ST333S Series TJ = 125°C 100 0 0 100 200 300 400 500 Average On-state Current (A) 600 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C) Fig. 4 - On-State Power Loss Characteristics Revision: 28-Aug-17 Document Number: 94377 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333SP Series 10000 Vishay Semiconductors Transient Thermal Impedance Z thJC (K/ W) Peak Half Sine Wave On-state Current (A) www.vishay.com At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125°C @60 Hz 0.0083 s @50 Hz 0.0100 s 9000 8000 7000 6000 5000 ST333SSeries 4000 1 10 100 1 Steady State Value R thJC = 0.10 K/ W (DC Operation) 0.1 0.01 ST333S Series 0.001 0.001 11000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control 10000 Of Conduction May Not Be Maintained. Initial TJ = 125°C 9000 No Voltage Reapplied Rated VRRM Reapplied 8000 7000 6000 5000 ST333S Series 4000 0.01 0.1 1 Pulse Train Duration (s) TJ = 25°C TJ = 125°C 1000 ST333SSeries 100 2 3 4 5 10 320 I TM 300 280 260 = 500 A 300 A 200 A 100 A 50 A 240 220 200 180 160 ST333S Series TJ = 125 °C 140 120 100 80 10 20 30 40 50 60 70 80 90 100 6 7 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Fig. 9 - Reverse Recovered Charge Characteristics Maximum Reverse Recovery Current - Irr (A) Instantaneous On-state Current (A) 10000 1 1 Rate Of Fall Of On-state Current - di/ dt (A/ µs) Fig. 6 - Maximum Non-Repetitive Surge Current 0 0.1 Fig. 8 - Thermal Impedance ZthJC Characteristics Maximum Reverse Recovery Charge - Qrr (µC) Peak Half Sine Wave On-state Current (A) Fig. 5 - Maximum Non-Repetitive Surge Current 0.01 Square Wave Pulse Duration (s) Number Of Equa l Amplitude Half Cycle Current Pulses (N) 180 160 140 ITM = 500 A 300 A 200 A 100 A 50 A 120 100 80 ST333S Series TJ = 125 °C 60 40 20 10 20 30 40 50 60 70 80 90 100 Rate Of Fall Of On-state Current - di/ dt (A/ µs) Fig. 10 - Reverse Recovery Current Characteristics Revision: 28-Aug-17 Document Number: 94377 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333SP Series www.vishay.com Vishay Semiconductors Peak On-state Current (A) 1E4 1000 1E3 500 400 200 100 50 Hz 1500 2000 2500 50 Hz 400 200 100 1500 Snubb er circ uit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 3000 1E2 5000 1E2 Snubb er circuit Rs = 10 ohms Cs = 0.47 µF V D = 80% VDRM 2000 2500 3000 ST333SSeries Sinusoidal pulse TC = 50°C tp 1E1 1E1 500 1000 1E3 1E4 1E 4 ST333SSeries Sinusoida l pulse TC = 75°C tp 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 11 - Frequency Characteristics Peak On-state Current (A) 1E4 1E3 1000 500 100 400 200 500 1500 Snub b er circ uit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 2000 2500 3000 1E2 50 Hz 1000 1E2 1E4 1E4 1E3 50 Hz Snub ber c ircuit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1500 2000 2500 ST333SSeries Trap ezoidal p ulse TC = 50°C di/ d t = 50A/ µs 1E1 1E1 200 100 400 ST333SSeries Tra pezoidal pulse TC = 75°C di/ dt = 50A/µs 3000 1E1 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 12 - Frequency Characteristics Peak On-state Current (A) 1E4 1E3 400 50 Hz 400 Snub ber circ uit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 2000 2500 1500 2000 1E3 ST333SSeries Trapezoidal pulse TC = 75°C di/ dt = 100A/ µs 2500 ST333SSeries Trapezoid al pulse TC = 50°C di/ dt = 100A/ µs tp 3000 1E4 1E4 100 50 Hz Snub ber c irc uit R s = 10 ohms C s = 0.47 µF V D = 80% VDRM 1000 3000 1E2 200 500 1000 1E1 1E1 100 500 1500 1E2 200 1E1 1E1 tp 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 13 - Frequency Characteristics Revision: 28-Aug-17 Document Number: 94377 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST333SP Series www.vishay.com Vishay Semiconductors Peak On-state Current (A) 1E5 ST333SSeries Rectangular pulse d i/ dt = 50A/ µs tp 20 joules p er pulse 1E4 2 3 5 10 20 joules p er pulse 1 0.5 1E3 2 0.5 0.3 0.4 0.3 1E2 0.2 ST333SSeries Sinusoidal pulse tp 10 1 0.2 1E1 1E1 3 5 1E2 1E3 1E1 1E 1 1E4 1E4 1E2 1E3 1E4 Pulse Basewidth (µs) Pulse Basewidth (µs) Fig. 14 - Maximum On-State Energy Power Loss Characteristics Rec tangular gate pulse a) Rec ommended load line for rated di/ dt : 20V, 10ohms; tr