2SK3905

2SK3905 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK3905 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 8.2 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 17 68 150 816 17 15 150 −55~150 Unit V V V A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEATSINK) 3. SOURCE Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-65 2−16C1B Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics 2 Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit °C/W °C/W Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: VDD = 90 V, Tch = 25°C, L = 4.8 mH, RG = 25 Ω, IAR = 17 A Note 3: Repetitive rating: pulse width limited by max junction temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 3 1 2006-11-06 2SK3905 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton tf ID = 8.5 A VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 8.5 A VDS = 10 V, ID = 8.5 A Min ⎯ ±30 ⎯ 500 2.0 ⎯ 2.3 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.25 8.2 3100 20 270 70 Max ±10 ⎯ 100 ⎯ 4.0 0.31 ⎯ ⎯ ⎯ pF Unit μA V μA V V Ω S ⎯ 10 V VGS 0V 50 Ω ⎯ ⎯ ⎯ ns ⎯ VOUT Turn-on time Switching time Fall time ⎯ RL = 24 Ω 130 ⎯ VDD ∼ 200 V − ⎯ 70 ⎯ ⎯ ⎯ ⎯ ⎯ nC Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“Miller”) charge toff Duty < 1%, tw = 10 μs = 280 Qg Qgs Qgd VDD ∼ 400 V, VGS = 10 V, ID = 17 A − ⎯ ⎯ ⎯ 62 40 22 Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = 17 A, VGS = 0 V IDR = 17 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 1300 18 Max 17 68 −1.7 ⎯ ⎯ Unit A A V μs μC Marking TOSHIBA K3905 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK3905 ID – VDS 10 ID – VDS 20 10 8.0 7.0 6.75 COMMON SOURCE Tc = 25°C PULSE TEST DRAIN CURRENT ID (A) 8 6.0 DRAIN CURRENT ID (A) COMMON SOURCE Tc = 25°C PULSE TEST 10 8.0 6.25 16 6.5 6 5.75 5.5 5.25 12 6.25 6.0 4 8 5.5 2 5.0 VGS = 4.5 V 4 VGS = 5.0 V 0 0 1 2 3 4 5 0 0 10 20 30 40 50 DRAIN−SOURCE VOLTAGE VDS (V) DRAIN−SOURCE VOLTAGE VDS (V) ID – VGS 50 10 VDS – VGS DRAIN−SOURCE VOLTAGE VDS (V) COMMON SOURCE Tc = 25°C PULSE TEST DRAIN CURRENT ID (A) COMMON SOURCE VDS = 20 V PULSE TEST 40 8 30 25 6 ID = 1 7 A 20 4 8.5 10 100 Tc = −55°C 2 4.0 0 0 2 4 6 8 10 12 14 0 0 4 8 12 16 20 GATE−SOURCE VOLTAGE VGS (V) GATE−SOURCE VOLTAGE VGS (V) ⎪Yfs⎪ − ID 100 FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) COMMON SOURCE VDS = 20 V PULSE TEST RDS (ON) − ID 1 COMMON SOURCE Tc = 25°C PULSE TEST Tc = −55°C 25 100 DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) 10 VGS = 10 V VGS = 15 V 1 1 10 DRAIN CURRENT ID (A) 0.1 100 1 10 100 DRAIN CURRENT ID (A) 3 2006-11-06 2SK3905 RDS (ON) − Tc 1 IDR − VDS 100 0.8 DRAIN REVERSE CURRENT IDR (A) DRAIN−SOURCE ON RESISTANCE RDS (ON) (Ω) COMMON SOURCE VGS = 10 V PULSE TEST COMMON SOURCE Tc = 25°C PULSE TEST 10 0.6 ID = 1 7 A 0.4 8.5 4 1 10 5 3 1 0.2 0 -80 -40 0 40 80 120 160 0.1 0.0 VGS = 0, −1 V -0.6 -0.8 -1.0 -1.2 -0.2 -0.4 CASE TEMPERATURE Tc (°C) DRAIN−SOURCE VOLTAGE VDS (V) CAPACITANCE – VDS 10000 Vth − Tc Vth (V) 5 Ciss (pF) 4 COMMON SOURCE VDS = 10 V ID = 1 m A PULSE TEST CAPACITANCE C 1000 GATE THRESHOLD VOLTAGE 3 Coss 2 100 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 10 0.1 1 10 Crss 1 0 100 -80 -40 0 40 80 120 160 DRAIN−SOURCE VOLTAGE VDS (V) CASE TEMPERATURE Tc (°C) PD − Tc 200 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 500 PD (W) DRAIN−SOURCE VOLTAGE VDS (V) VDS 400 16 DRAIN POWER DISSIPATION 120 300 VDS = 100 V 400 200 12 80 200 VGS 8 40 100 4 0 0 40 80 120 160 200 0 0 20 40 60 80 100 0 TOTAL GATE CHARGE Qg (nC) CASE TEMPERATURE Tc (°C) 4 2006-11-06 GATE−SOURCE VOLTAGE VGS 160 COMMON SOURCE ID = 1 7 A Tc = 25°C PULSE TEST 20 (V) 2SK3905 rth − tw 10 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-a) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE PDM t T Duty = t/T Rth (ch-c) = 0.833°C/W 0.01 0.001 10 μ 100 μ 1m 10 m 100 m 1 10 PULSE WIDTH tw (S) SAFE OPERATING AREA 100 EAS – Tch 1000 100 μs * AVALANCHE ENERGY EAS (mJ) ID max (PULSE) * 800 DRAIN CURRENT ID (A) 10 1 ms * ID max (CONTINUOUS) 600 1 DC OPERATION Tc = 25°C 400 0.1 200 * SINGLE NONPETITIVE PULSE Tc = 25°C Curves must be derated linearly with increase in temperature. 0.01 1 10 100 1000 VDSS max 0 25 50 75 100 125 CHANNEL TEMPERATURE (INITIAL) Tch 150 (°C) DRAIN−SOURCE VOLTAGE VDS (V) 15 V −15 V BVDSS IAR VDD VDS TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 4.8 mH WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2006-11-06 2SK3905 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06