GT10J321

GT10J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10J321 High Power Switching Applications Fast Switching Applications • • • • • • • Fourth-generation IGBT Enhancement mode type Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.03 μs (typ.) Low switching loss : Eon = 0.26 mJ (typ.) : Eoff = 0.18 mJ (typ.) Low saturation voltage: VCE (sat) = 2.0 V (typ.) FRD included between emitter and collector Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous Collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ±25 5 10 20 10 20 11 29 150 −55~150 Unit V V A A A JEDEC JEITA ― ― 2-10R1C W °C °C TOSHIBA Weight: 1.7 g Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 4.31 4.90 Unit °C/W °C/W Equivalent Circuit Collector Marking Gate Emitter K2662 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT10J321 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching loss Turn-off switching loss Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon Eoff VF trr IF = 10 A, VGE = 0 IF = 10 A, di/dt = −100 A/μs Inductive load VCC = 300 V, IC = 10 A VGG = +15 V, RG = 68 Ω (Note 1) (Note 2) Test Condition VGE = ±25 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 10 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Min ⎯ ⎯ 3.5 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 2.0 1550 0.06 0.03 0.17 0.24 0.03 0.30 0.26 0.18 ⎯ 100 Max ±500 1.0 6.5 2.45 ⎯ Unit nA mA V V pF ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ μs ⎯ ⎯ ⎯ ⎯ Switching loss mJ ⎯ 2.0 ⎯ V ns Peak forward voltage Reverse recovery time Note 1: Switching time measurement circuit and input/output waveforms VGE 0 −VGE IC RG VCE 0 VCE 10% td (off) tf toff ton 10% 10% td (on) tr 10% L VCC IC 90% 90% 90% 10% Note 2: Switching loss measurement waveforms VGE 0 90% 10% IC VCE 5% 0 Eoff Eon 2 2006-11-01 GT10J321 IC – VCE 20 20 Common emitter Tc = 25°C VCE – VGE Common emitter (A) 16 20 12 15 10 VCE (V) Tc = −40°C 16 20 12 10 8 IC = 5 A Collector current IC 9 8 4 Collector-emitter voltage 5 VGE = 8 V 4 0 0 1 2 3 4 0 0 4 8 12 16 20 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE – VGE 20 Common emitter 20 VCE – VGE Common emitter VCE (V) 16 VCE (V) Tc = 25°C Tc = 125°C 16 Collector-emitter voltage 12 20 10 8 IC = 5 A 4 Collector-emitter voltage 12 20 10 8 IC = 5 A 4 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC – VGE 20 4 Common emitter VCE = 5 V Common emitter VCE (sat) – Tc 20 15 10 Collector-emitter saturation voltage VCE (sat) (V) (A) 16 VGE = 15 V 3 Collector current IC 12 2 5 IC = 2 A 8 Tc = 125°C 4 25 0 0 −40 8 12 16 20 1 4 0 −60 −20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (°C) 3 2006-11-01 GT10J321 Switching Time 10 Common emitter VCC = 300 V VGG = 15 V IC = 1 0 A : Tc = 25°C : Tc = 125°C td(on), tr, ton – RG 10 Switching Time td(on), tr, ton – IC Common emitter VCC = 300 V VGG = 15 V RG = 68 Ω : Tc = 25°C : Tc = 125°C Switching time td(on), ton, tr (µs) 1 Switching time td(on), tr, ton (µs) 1 ton 0.1 td(on) tr 0.01 1 0.1 ton td(on) tr 10 100 1000 0.01 0 2 4 6 8 10 Gate resistance RG (Ω) Collector current IC (A) Switching Time 10 Common emitter VCC = 300 V VGG = 15 V IC = 1 0 A : Tc = 25°C : Tc = 125°C td(off), tf, toff – RG 10 Switching Time td(off), tf, toff – IC Common emitter VCC = 300 V VGG = 15 V RG = 68 Ω : Tc = 25°C : Tc = 125°C toff Switching time td(off), tf, toff (µs) 1 Switching time td(off), tf, toff (µs) 1 toff 0.1 td(off) tf 0.1 td(off) tf 0.01 1 10 100 1000 0.01 0 2 4 6 8 10 Gate resistance RG (Ω) Collector current IC (A) Switching Loss 1 Eon, Eoff – RG 1 Switching Loss Eon, Eoff – IC Eon, Eoff (mJ) Eon, Eoff (mJ) Eon Eon 0.1 Switching loss Switching loss Eoff Common emitter VCC = 300 V VGG = 15 V IC = 1 0 A : Tc = 25°C : Tc = 125°C (Note 2) 0.1 Common emitter VCC = 300 V VGG = 15 V RG = 68 Ω : Tc = 25°C : Tc = 125°C (Note 2) Eoff 0.01 1 10 100 1000 0.01 0 2 4 6 8 10 Gate resistance RG (Ω) Collector current IC (A) 4 2006-11-01 GT10J321 C – VCE 10000 500 Common emitter VCE, VGE – QG 20 RL = 30 Ω Tc = 25°C VCE (V) Cies 400 16 1000 Collector-emitter voltage Capacitance C 300 200 VCE = 100 V 100 200 4 8 100 Common emitter VGE = 0 f = 1 MHz Tc = 25°C 10 0.1 1 10 Coes Cres 100 1000 0 0 20 40 60 0 80 Collector-emitter voltage VCE (V) Gate charge QG (nC) IF − VF 20 Common collector VGE = 0 16 1000 Common collector di/dt = −100 A/μs VGE = 0 : Tc = 25°C : Tc = 125°C trr 100 trr, Irr − IF 100 12 Tc = 125°C 8 25 4 −40 0 0 10 Irr 0.4 0.8 1.2 1.6 2.0 10 0 2 4 6 8 1 10 Forward voltage VF (V) Forward current IF (A) Safe Operating Area 100 100 Reverse Bias SOA IC max (pulsed)* (A) Collector current IC DC operation 100 μs* 1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 0.1 1 10 100 Collector current IC 10 IC max (continuous) 50 μs* (A) 10 1 Tj < 125°C = VGE = 15 V RG = 68 Ω 1 m s* 10 ms* 1000 0.1 1 10 100 1000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 5 2006-11-01 Reverse recovery current Irr (A) Forward current IF Reverse recovery time trr (ns) (A) Gate-emitter voltage 300 12 VGE (V) (pF) GT10J321 ICmax – Tc 12 Maximum DC collector current ICmax (A) Transient thermal impedance rth (t) (°C/W) 10 Common emitter VGE = 15 V 10 2 Tc = 25°C 1 FRD rth (t) – tw 10 8 10 0 IGBT 6 10 −1 4 10 −2 2 10 −3 0 25 50 75 100 125 150 10 −4 10 −5 10 −4 10 −3 10 −2 10 −1 10 0 10 1 10 2 Case temperature Tc (°C) Pulse width tw (s) 6 2006-11-01 GT10J321 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-11-01