GT60N321(Q)

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A) • FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs) Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics symbol Rating Unit Collector-Emitter Voltage VCES 1000 V Gate-Emitter Voltage VGES ±25 V DC IC 60 1 ms ICP 120 DC IECF 15 1 ms IECFP 120 Collector Power Dissipation (Tc = 25°C) PC 170 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to 150 °C ⎯ 0.8 N･m Collector Current Emitter-Collector Forward Current Screw Torque A A JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Marking Collector Part No. (or abbreviation code) TOSHIBA GT60N321 Note 1 Lot No. Gate line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV JAPAN Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Note 1 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Emitter Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Start of commercial production 2000-03 1 2013-11-01 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate Leakage Current IGES VGE = ±25 V, VCE = 0 ⎯ ⎯ ±500 nA Collector Cut-off Current ICES VCE = 1000 V, VGE = 0 ⎯ ⎯ 1.0 mA VGE (OFF) IC = 60 mA, VCE = 5 V 3.0 ⎯ 6.0 V Collector-Emitter Saturation Voltage VCE (sat) (1) IC = 10 A, VGE = 15 V ⎯ 1.6 2.3 V Collector-Emitter Saturation Voltage VCE (sat) (2) IC = 60 A, VGE = 15 V ⎯ 2.3 2.8 V VCE = 10 V, VGE = 0, f = 1 MHz ⎯ 4000 ⎯ pF ⎯ 0.23 ⎯ ⎯ 0.33 ⎯ ⎯ 0.25 0.40 ⎯ 0.70 ⎯ IEC = 15 A, VGE = 0 ⎯ 1.2 1.9 V IF = 15 A, VGE = 0, di/dt = −20 A/μs ⎯ 0.8 2.5 μs Input Capacitance Cies Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Emitter-Collector Forward Voltage Reverse Recovery Time tr 51 Ω ton tf 15 V 0 −15 V toff VECF trr 10 Ω Gate-Emitter Cut-off Voltage μs 600 V Thermal Resistance（IGBT） Rth(j-c) ⎯ ⎯ ⎯ 0.74 °C/W Thermal Resistance（Diode） Rth(j-c) ⎯ ⎯ ⎯ 4.0 °C/W 2 2013-11-01 GT60N321 IC – VCE VCE – VGE 100 10 20 V 10 V 15 V Collector-emitter voltage (A) Collector current IC 80 VCE (V) Common emitter Tc = 25°C 25 V 60 VGE = 7 V 40 20 0 0 1 2 3 4 Collector-emitter voltage Common emitter Tc = −40°C 8 80 6 4 30 2 IC = 10 A 0 0 5 60 5 VCE (V) 10 Gate-emitter voltage VCE (V) 80 Collector-emitter voltage VCE (V) Collector-emitter voltage Common emitter Tc = 25°C 6 4 60 2 IC = 10 A 30 5 10 15 Gate-emitter voltage 20 8 80 6 4 60 2 30 IC = 10 A 5 10 15 Gate-emitter voltage VGE (V) IC – VGE 20 25 VGE (V) VCE (sat) – Tc 4 Common Emitter VCE = 5 V Collector-emitter saturation voltage VCE (sat) (V) (A) VGE (V) Common emitter Tc = 125°C 0 0 25 100 Collector current IC 25 10 8 80 20 VCE – VGE VCE – VGE 10 0 0 15 60 40 25 20 40 Common emitter VGE = 15 V 3 80 60 30 2 IC = 10 A 1 TC = 125°C 0 0 2 4 Gate-emitter voltage 6 0 −40 8 VGE (V) 0 40 80 120 160 Case temperature Tc (°C) 3 2013-11-01 GT60N321 Switching time – RG 10 Common emitter RL = 2.5 Ω TC = 25°C 16 Switching time (μs) Collector-emitter voltage VCE (V) (×10 V) Gate-emitter voltage VGE (V) VCE, VGE – QG 20 VCE = 150 V 12 8 Common emitter VCC = 600 V IC = 60 A VGG = ±15 V TC = 25°C ton 1 tr tf 100 V 4 50 V 0 0 50 100 150 200 250 Gate charge QG 300 350 0.1 1 400 10 100 Gate resistance (nC) Switching Time – IC 1000 RG (Ω) C – VCE 10 10000 (pF) Common emitter VCC = 600 V RG = 51 Ω VGG = ±15 V TC = 25°C 1 Capacitance C Switching time (μs) toff toff ton tf Cies 1000 100 Coes Cres 10 1 tr 10 100 1000 Collector-emitter voltage 0.1 0 20 40 60 Collector current IC Common emitter VGE = 0 V f = 1 MHz TC = 25°C 10000 VCE (V) 80 (A) Reverse Bias SOA 300 Safe Operating Area Tj ≤ 125°C VGE = ±15 V 1000 DC Operation * Single 10 non-repetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 1 1 10 10 μs* 100 μs* 1 ms* 10 ms* 100 1000 (A) IC max (Pulsed)* IC max 100 (Continuous) 50 Collector current IC Collector current IC (A) 100 30 10 5 3 1 1 3000 Collector- emitter voltage VCE (V) RG = 10 Ω 30 100 300 Collector-emitter voltage 4 1000 3000 VCE (V) 2013-11-01 GT60N321 Rth (t) – tw 3 IECF – VECF 100 Common コレクタ接地 collector 10 1 Diode Stage 0 IGBT Stage 10−1 10−2 10−3 10−5 80 60 40 −40 20 Tc = 125°C 10−4 10−3 10−2 Pulse width 10−1 10 0 10 1 10 25 2 0 0.0 tw (s) 0.5 Irr, trr – IECF 0.8 6 0.4 40 60 (V) Emitter-collector forward current IECF Irr 0 100 80 1 (A) Irr 7 Peak reverse recovery current 1.2 trr (μs) 1.6 trr 20 VECF 2.5 50 Reverse recovery time Peak reverse recovery current Irr (A) Common emitter di/dt = −20 A/μs Tc = 25°C 0 2.0 Irr, trr – di/dt 2 8 5 1.5 Collector-emitter forward voltage 10 9 1.0 trr 40 0.8 30 0.6 20 0.4 10 0.2 0 (A) Common emitter IECF = 60 A Tc = 25°C 0 50 100 150 200 trr (μs) 10 2 Emitter-collector forward current IECF (A) Transient thermal impedance Rth (t) (°C/W) Tc = 25°C 10 Reverse recovery time 10 0 250 di/dt (A/μs) 5 2013-11-01 GT60N321 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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