SSM3J35CT,L3F

SSM3J35CT TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35CT ○ High-Speed Switching Applications ○ Analog Switch Applications Unit: mm • 1.2-V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS -20 V Gate–source voltage VGSS ±10 V DC ID -100 Pulse IDP -200 Drain current Drain power dissipation mA PD (Note 1) 100 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C CST3 JEDEC - JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-1J1B temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.75 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2 ) Marking (top view) Polarity mark Pin Assignment (top view) Equivalent Circuit (top view) Polarity mark (on the top) 3 1 S3 3 1 2 2 1. Gate 2. Source 3. Drain *Electrodes: on the bottom Start of commercial production 2008-03 1 2015-09-29 SSM3J35CT Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit IGSS VGS = ±10 V, VDS = 0 V ― ― ±10 μA V (BR) DSS ID = -0.1 mA, VGS = 0 V -20 ― ― V IDSS VDS = -20 V, VGS = 0 V ― ― -1 μA Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.4 ― -1.0 V Forward transfer admittance |Yfs| VDS = -3 V, ID = -50 mA (Note 2) 77 ― ― mS ID = -50 mA, VGS = -4 V (Note 2) ― 4.3 8 ID = -50 mA, VGS = -2.5 V (Note 2) ― 5.6 11 ID = -5 mA, VGS = -1.5 V (Note 2) ― 8.2 22 ID = -2 mA, VGS = -1.2 V (Note 2) ― 11 44 ― 12.2 ― ― 6.5 ― ― 10.4 ― ― 175 ― ― 251 ― ― 0.83 1.2 Gate leakage current Drain–source breakdown voltage Drain cutoff current Drain–source ON-resistance RDS (ON) Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss VDS = -3 V, VGS = 0 V, f = 1 MHz Turn-on time ton Turn-off time toff VDD = -3 V, ID = -50 mA, VGS = 0 to -2.5 V VDSF ID = 100 mA, VGS = 0 V Switching time Drain–source forward voltage (Note 2) Ω pF ns V Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN 0V 10% OUT 0 IN 90% −2.5 V 50Ω −2.5V 10 μs RL VDD (c) VOUT VDD = -3 V Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDS (ON) 90% 10% VDD tr ton tf toff Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (−1 mA for the SSM3J35CT). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2015-09-29 SSM3J35CT ID – VDS -250 ID – VGS -1000 Common Source VDS = -3 V Ta = 25°C -4 V (mA) -100 (mA) -200 -2.5 V -150 Drain current ID Drain current ID Common Source -1.8 V -100 -1.5 V -50 VGS=-1.2 V -1.5 -1 -0.5 Drain–source voltage VDS 25°C −25°C -1 -0.1 -0.01 0 0 0 Ta = 100°C -10 -2 (V) -1 -3 Gate–source voltage VGS RDS (ON) – VGS (V) RDS (ON) – VGS 20 15 Common Source Common Source ID = -5 mA ID = -50 mA Drain–source ON-resistance RDS (ON) (Ω) Drain–source ON-resistance RDS (ON) (Ω) -2 15 10 25°C Ta=100°C 5 10 25°C Ta=100°C 5 -25°C -25°C 0 0 -2 -4 -6 Gate–source voltage VGS 0 -10 -8 0 (V) -2 -4 -10 -8 Gate–source voltage VGS (V) RDS (ON) – Ta RDS (ON) – ID 20 20 Common Source Common Source Ta = 25°C Drain–source ON-resistance RDS (ON) (Ω) Drain–source ON-resistance RDS (ON) (Ω) -6 15 VGS = -1.2 V 10 -1.5 V -2.5 V 5 -4 V 0 -1 -10 Drain current ID -100 -1.5 V, -5 mA 10 (mA) -2.5 V, -50 mA -4 V, -50 mA 5 0 −50 -1000 VGS =−1.2 V, ID=-2 mA 15 0 50 100 150 Ambient temperature Ta (°C) 3 2015-09-29 SSM3J35CT Vth – Ta |Yfs| – ID (mS) -1 ID = -1 mA VDS = -3 V -0.8 Forward transfer admittance |Yfs| Gate threshold voltage Vth (V) Common Source -0.6 -0.4 -0.2 0 −50 0 100 50 150 1000 100 10 Common Source VDS = -3 V Ta = 25°C 1 -1 -10 Ambient temperature Ta (°C) Drain current ID IDR – VDS -1000 -100 (mA) C – VDS 1000 100 VGS = 0 V 100 D G Capacitance C (pF) Drain reverse current IDR (mA) Common Source IDR 10 S 25°C 1 Ta=100°C 0.1 -25°C 0.01 0 0.2 0.4 0.6 0.8 1 Drain–source voltage VDS 1.2 10 Ciss Coss Crss Common Source VGS = 0 V f = 1 MHz Ta = 25°C 1 -0.1 1.4 (V) -1 -10 Drain–source voltage VDS (ns) Common Source VDD = -3 V VGS = 0 to -2.5 V Ta = 25°C toff Switching time t 1000 tf 100 ton tr 10 -0.1 (V) PD – Ta Drain Power Dissipation PD (mW) t – ID 10000 -100 250 Mounted on FR4 board (10 mm × 10 mm × 1.0 mm, Cu Pad: 100 mm2 ) 200 150 100 50 0 -1 -10 Drain current ID -100 -1000 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) (mA) 4 2015-09-29 SSM3J35CT RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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