TCK22910G,LF

TCK2291xG TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK2291xG 2A Load Switch IC with True Reverse Current Blocking The TCK2291xG series is Load Switch ICs for power management with True Reverse Current Blocking and Thermal Shutdown function featuring low switch on resistance, ultra low quiescent current, high output current and wide input operating voltage range of 1.1 to 5.5 V. Switch ON resistance is only 31 mΩ at 5.0 V, -0.15 A load conditions and output current is available on 2.0 A. And these feature a slew rate control driver and output auto-discharge function. These devices are available in 0.4 mm pitch ultra small package WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm). Thus these devices are ideal for portable applications that require high-density board assembly such as cellular phone. WCSP6E Feature Weight: 1 mg (typ.)  True Reverse Current Blocking  Thermal Shutdown function  Output auto-discharge (Option)  Under voltage lockout  Low ON resistance : RON = 31 mΩ (typ.) at VIN = 5.0 V, IOUT = -0.15 A RON = 40 mΩ (typ.) at VIN = 3.3 V, IOUT = -0.15 A RON = 70 mΩ (typ.) at VIN = 1.8 V, IOUT = -0.15 A RON = 141 mΩ (typ.) at VIN = 1.2 V, IOUT = -0.15 A  Low Quiescent Current: IQ = 11 μA (typ.) at IOUT = 0 mA  Low standby current: IQ(OFF) = 0.6 μA (typ.) at OFF state  Inrush current reduction circuitt  Pull down connection between Control and GND(Option)  Ultra small package : WCSP6E (0.8 mm x 1.2 mm, t: 0.55 mm) Start of commercial production 2016-06 © 2017-2021 Toshiba Electronic Devices & Storage Corporation 1 2021-02-24 TCK2291xG Function Table Function Device Marking Part number True Reverse current blocking Output autodischarge Under voltage lock out Thermal shutdown Control pin polarity Control pin pull down connection TCK22910G Built in N/A Built in Built in Active Low N/A 4S TCK22911G Built in Built in Built in Built in Active Low N/A 3S TCK22912G Built in N/A Built in Built in Active High Built in 2S TCK22913G Built in Built in Built in Built in Active High Built in 1S © 2017-2021 Toshiba Electronic Devices & Storage Corporation 2 2021-02-24 TCK2291xG Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to 6.0 V 2.0 A Output current IOUT 3.0 (Note1) A DC Pulse Power dissipation PD Operating temperature range Topr −40 to 85 °C Tj 150 °C Tstg −55 to 150 °C Junction temeperature Storage temperature 800 (Note 2) mW Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 100 μs pulse, 2% duty cycle Note2: Rating at mounting on a board Glass epoxy board dimension : 40mm x 40mm (both sides of board), t=1.6mm Metal pattern ratio : a surface approximately 50%, the reverse side approximately 50% Through hole : diameter 0.5mm x 28) Operating conditions Characteristics Symbol Condition Min Max Unit VIN ― 1.1 5.5 V Output voltage VOUT ― ― VIN V Output current IOUT 1.8 V ≤ VIN  ― 2.0 A ― VIH 1.2V < VIN ≤ 5.5 V 1.0 Control High-level input voltage 1.1V ≤VIN ≤1.2 V 0.9 ― ― 0.4 Input voltage Control Low-level input voltage ― VIL Pin Assignment(Top view) A 2 1 B V V Top marking Lot trace code C A1: VOUT B1: VOUT C1: GND A2: VIN B2: VIN C2: Control Device Marking Index © 2017-2021 Toshiba Electronic Devices & Storage Corporation 3 2021-02-24 TCK2291xG Block Diagram Reverse Current Blocking VIN VOUT Q1 Thermal Shutdown UVLO Slew Rate Control Driver Control Control Logic Q2 Output Discharge * Pull Down * GND *:Option Operation logic table Control “High” Control “Low” TCK22910G TCK22911G TCK22912G Output Q1 OFF OFF ON ON Discharge Q2 Reverse current blocking ― ON ― OFF Active Active Active Active ON ― ON OFF OFF ― OFF ON Active Active Active Active Output Q1 Discharge Q2 Reverse current blocking © 2017-2021 Toshiba Electronic Devices & Storage Corporation 4 TCK22913G 2021-02-24 TCK2291xG Electrical Characteristics DC Characteristics (Ta = -40 to 85°C) Ta = −40 to 85°C Ta = 25°C Characteristics Quiescent current ( ON state) Quiescent current ( OFF state) Switch leakage current( OFF state) Symbol Test Condition Unit Min Typ. Max Min Max VIN = 1.1 V ― 9 ― ― ― μA VIN = 5.5 V ― 11 ― ― 20 μA IQ(OFF) VIN = 5.5 V, VOUT = OPEN, (Note 3) ― 0.6 ― ― 2.5 μA ISD(OFF) VOUT = GND, current through from VIN to VIN = VCT = 5.5 V VOUT. (Note 4) ― 20 ― ― 2000 nA IQ IOUT = 0 mA Reverse blocking current IRB VOUT = 5.0 V, VIN = 0 V, RCB active ― 0.01 ― ― 2 μA Reverse blocking voltage threshold VRB VOUT – VIN ― 35 ― ― ― mV Reverse blocking release voltage threshold VRBR VOUT – VIN ― -15 ― ― ― mV Under Voltage Lock Out (UVLO) rising threshold VUVL_RI ― ― 0.82 ― ― 1.1 V Under Voltage Lock Out (UVLO) falling threshold VUVL_FA ― ― 0.77 ― ― ― V VIN = 5.0 V ― 31 ― ― 85 VIN = 3.3 V ― 40 ― ― 95 VIN = 1.8 V ― 70 ― ― 140 VIN = 1.2 V ― 141 ― ― ― VIN = 1.1 V ― 179 ― ― ― ― 100 ― ― ― On resistance Output discharge on resistance RON RSD IOUT = -0.15 A ― (Note 5) mΩ Ω Note 3 ： Except ISD(OFF) OFF-state switch current Note 4 ： Only applies to the TCK22910G and TCK22912G Note 5 ： Only applies to the TCK22911G and TCK22913G © 2017-2021 Toshiba Electronic Devices & Storage Corporation 5 2021-02-24 TCK2291xG AC Characteristics (Ta = 25°C) VIN = 5.0 V, TCK22910G Characteristics Symbol Test Condition(Figure 2) Min Typ. Max Unit VOUT rise time tr VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 1.4 ― ms VOUT fall time tf VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 120 ― μs Turn on delay tON VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 800 ― μs Turn off delay tOFF VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 5 ― μs Min Typ. Max Unit VIN = 5.0 V, TCK22911G Characteristics Symbol Test Condition(Figure 2) VOUT rise time tr VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 1.4 ― ms VOUT fall time tf VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 60 ― μs Turn on delay tON VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 800 ― μs Turn off delay tOFF VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 5 ― μs Min Typ. Max Unit VIN = 5.0 V, TCK22912G Characteristics Symbol Test Condition(Figure 1) VOUT rise time tr VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 1.4 ― ms VOUT fall time tf VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 120 ― μs Turn on delay tON VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 800 ― μs Turn off delay tOFF VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 10 ― μs Min Typ. Max Unit VIN = 5.0 V, TCK22913G Characteristics Symbol Test Condition(Figure 1) VOUT rise time tr VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 1.4 ― ms VOUT fall time tf VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 60 ― μs Turn on delay tON VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 800 ― μs Turn off delay tOFF VIN= 5.0 V , RL = 500 Ω , CL=0.1 μF,  ― 10 ― μs © 2017-2021 Toshiba Electronic Devices & Storage Corporation 6 2021-02-24 TCK2291xG AC Waveform tr VOUT 90% 10% VIH VCT tf 50% 50% 90% VIL 10% 90% VOUT 10% tOFF tON Figure 1 VOH VOL tr, tf, tON, tOFF Waveforms(Active High) VIH VCT 50% 50% VIL tr VOUT tf 90% 10% 90% VOUT 10% 10% Figure 2 90% tON tOFF VOH VOL tr, tf, tON, tOFF Waveforms(Active Low) © 2017-2021 Toshiba Electronic Devices & Storage Corporation 7 2021-02-24 TCK2291xG Application Note Application circuit example (top view) 1. The figure below shows the example of configuration for TCK2291xG. Control GND VIN CIN VOUT COUT LOAD CL RL 1) Input and Output capacitor An input capacitor (CIN) and an output capacitor (COUT) are necessary for the stable operation of TCK2291xG. And they are effective to reduce voltage overshoot or undershoot due to sharp changes in output current and also for improved stability of the power supply. When used, place CIN and COUT more than 1.0μF as close to VIN pin and VOUT pin to improve stability of the power supply. 2) Control pin The Control pin for TCK2291xG controls state of the switch, operated by the control voltage. Control pin is equipped with Schmitt trigger. Also, pull down resistance equivalent to a few MΩ is connected between Control and GND. Thus the load switch IC is in OFF state even when Control pin is OPEN. (except TCK22910G and TCK22911G). A control pins for TCK22910G and TCK22911G is Active low. Products that Control pin is an open connection, please use be sure to fix the potential of the Control pin to High or Low. 2. Thermal shutdown function Each device has a built-in thermal shutdown circuit. If the junction temperature goes beyond 170°C (Typ.), thermal shutdown circuit operates and turns off power switch. When the junction temperature decreases lower than 150°C, the power switch is turned on due to hysteresis. This operation is repeated as long as the junction temperature continues increasing. 3. True reverse current blocking Each device has built-in true reverse current blocking circuit (TRCB) to block reverse current from VOUT to VIN regardless of output MOSFET ON/OFF condition. (Full-Time Reverse Current Protection) 4. Under-voltage Lockout Each device has a built-in under-voltage lockout circuit to turn off switch if VIN drops below UVLO. hysteresis and UVLO is released when VIN exceeds threshold. This circuit has 5. Instructions and directions for use Each device has a built-in several functions, but these do not assure the suppression of uprising device operation. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design. © 2017-2021 Toshiba Electronic Devices & Storage Corporation 8 2021-02-24 TCK2291xG 6. Power Dissipation Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40mm x 40mm (both sides of board), t=1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 PD - Ta Power Dissipation PD (mW) 1000 800 600 400 200 0 -40 0 40 80 Ambient Temperature Ta (℃) 120 Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration the ambient temperature, input voltage, output current, etc. and applying the appropriate derating for allowable power dissipation during operation. © 2017-2021 Toshiba Electronic Devices & Storage Corporation 9 2021-02-24 TCK2291xG TCK2291xG Representative Typical Characteristics RON - VIN RON - IOUT IQ - VIN tON - Ta t r - Ta tON Response(Except TCK22910G,TCK22911G) © 2017-2021 Toshiba Electronic Devices & Storage Corporation 10 2021-02-24 TCK2291xG VUVL - Ta Reverse blocking voltage threshold VIN=5.5V tOFF-Ta Representative Typical Characteristics TCK22912G, TCK22913G tf-Ta Representative Typical Characteristics TCK22910G, TCK22912G tOFF - Ta t f - Ta tOFF Response Representative Typical Characteristics TCK22910G TCK22911G tOFF Response © 2017-2021 Toshiba Electronic Devices & Storage Corporation tOFF Response 11 2021-02-24 TCK2291xG TCK22912 TCK22913G tOFF Response tOFF Response Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2017-2021 Toshiba Electronic Devices & Storage Corporation 12 2021-02-24 TCK2291xG Package dimension Unit: mm Weight: 1 mg (typ.) © 2017-2021 Toshiba Electronic Devices & Storage Corporation 13 2021-02-24 TCK2291xG Land pattern dimensions (for reference only) Unit： mm © 2017-2021 Toshiba Electronic Devices & Storage Corporation 14 2021-02-24 TCK2291xG RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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