TLP131_07

TLP131 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP131 Office Machine Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP131 is a small outline coupler, suitable for surface mount assembly. TLP131 consists of a photo transistor, optically coupled to a gallium arsenide infrared emitting diode. • • • • Collector−emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 3750Vrms (min.) UL recognized: UL1577, file No. E67349 TOSHIBA Weight: 0.09 g 11−4C2 Unit in mm TLP131 base terminal is for the improvement of speed, reduction of dark current, and enable operation. Pin Configurations (top view) 1 6 5 3 1 : Anode 3 : Cathode 4 : Emitter 5 : Collector 6 : Base 4 1 2007-10-01 TLP131 Current Transfer Ratio Type Classification Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25°C Min. (None) TLP131 Rank Y Rank GR Rank GB 50 50 100 100 Max. 600 150 300 600 BLANK, Y, Y , G, G , B, B , GB Y, Y ■ ■ ■ ■ ■ ■ ■ Marking Of Classification G, G G, G , B, B , GB Note: Application type name for certiffication test,please use standard product type name,i.e. TLP131(GB): TLP131 Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta≥53°C) LED Peak forward current (100μs pulse,100pps) Reverse voltage Junction temperature Collector−emitter voltage Collector−base voltage Emitter−collector voltage Detector Emitter−base voltage Collector current Peak collector current (10ms pulse,100pps) Power dissipation Power dissipation derationg (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1min., RH≤ 60%) (Note 1) Symbol IF ΔIF / °C IFP VR Tj VCEO VCBO VECO VEBO IC ICP PC ΔPC / °C Tj Tstg Topr Tsol PT ΔPT / °C BVS Rating 50 −0.7 1 5 125 80 80 7 7 50 100 150 −1.5 125 −55~125 −55~100 260 200 −2.0 3750 Unit mA mA / °C A V °C V V V V mA mA mW mW / °C °C °C °C °C mW mW / °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together. 2 2007-10-01 TLP131 Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min. ― ― ― −25 Typ. 5 16 1 ― Max. 48 25 10 85 Unit V mA mA °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector−base breakdown voltage Emitter−base breakdown voltage Detector collector dark current Symbol VF IR CT V(BR)CEO V(BR)ECO V(BR)CBO V(BR)EBO ICEO Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5mA IE = 0.1mA IC = 0.1mA IE = 0.1mA VCE = 48V VCE = 48V,Ta = 85°C VCE = 48V,Ta = 85°C RBE = 1MΩ VCB = 10V VCE = 5V,IC = 0.5mA V = 0, f = 1MHz Min. 1.0 ― ― 80 7 80 7 ― ― ― ― ― ― Typ. 1.15 ― 30 ― ― ― ― 10 2 0.5 0.1 400 10 Max. 1.3 10 ― ― ― ― ― 100 50 10 ― ― ― Unit V μA pF V V V V nA μA μA nA ― pF Collector dark current Collector dark current DC forward current gain Capacitance (collector to emitter) ICER ICBO hFE CCE Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB IF = 5mA,VCB = 5V IC = 2.4 mA, IF = 8 mA VCE (sat) IC = 0.2 mA, IF = 1 mA Rank GB IF = 0.7mA, VCE = 48 V Min. 50 100 ― 30 ― ― ― ― ― Typ. ― ― 60 ― 10 ― 0.2 ― 1 Max. 600 600 ― ― ― 0.4 ― 0.4 10 μA V Unit % Saturated CTR Base photo−current Collector−emitter saturation voltage Off−state collector current IC / IF (sat) IPB % μA IC (off) 3 2007-10-01 TLP131 Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min. ― 5×10 10 Typ. 0.8 10 14 Max. ― ― ― ― ― Unit pF Ω Vrms Vdc 3750 ― ― ― 10000 10000 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Turn−on time Storage time Turn−off time Symbol tr tf ton toff tON ts tOFF tON ts tOFF RL = 1.9 kΩ%) RBE = OPEN VCC = 5 V, IF = 16 mA RL = 1.9 kΩ%) RBE = 220 kΩ VCC = 5 V, IF = 16 mA (Fig.1) VCC = 10 V, IC = 2 mA RL = 100Ω Test Condition Min. ― ― ― ― ― ― ― (Fig.1) ― ― ― Typ. 2 3 3 3 2 25 40 2 20 30 Max. ― ― ― ― ― ― ― ― ― ― μs μs μs Unit Fig. 1 Switching time test circuit IF tS VCE VCC 4.5V 0.5V tON tOFF IF VCC RL RBE VCE 4 2007-10-01 TLP131 IF – Ta 100 200 PC – Ta Allowable forward current IF (mA) Allowable collector power dissipation PC (mW) 80 160 60 120 40 80 20 40 0 −20 0 20 40 60 80 100 120 0 −20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 3000 Pulse width ≦ 100μs Ta = 25°C 100 50 Ta = 25°C IF – V F Pulse forward current IFP (mA) 500 300 (mA) IF Forward current 10 −3 1000 30 10 5 3 100 50 30 1 0.5 0.3 10 3 3 10 −2 3 10 −1 3 10 0 Duty cycle ratio DR 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward voltage VF (V) Forward voltage temperature coefficient ΔVF / ΔTa (mV / °C) ΔVF / ΔTa – IF −3.2 −2.8 −2.4 −2.0 −1.6 −1.2 −0.8 −0.4 0.1 1000 IFP – VFP (mA) IFP Pulse forward current 500 300 100 50 30 10 5 3 1 1.0 1.4 Pulse width ≦ 10μs Repetitive Frequency = 100Hz Ta = 25°C 1.8 2.2 2.6 3.0 0.3 0.5 1 3 5 10 30 50 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2007-10-01 TLP131 IC – VCE 50 50mA 40 30mA 20mA 15mA 10mA PC(MAX.) IF = 5mA 10 Ta = 25°C 30 Ta = 25°C IC – VCE (mA) (mA) IF = 50mA 40mA 20 30mA 20mA 10mA IC 30 Collector current 20 Collector current IC 10 5mA 2mA 0 0 0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 Collector–emitter voltage VCE (V) Collector–emitter voltage VCE (V) I C – IF 100 50 IC / IF – IF 1000 IC / IF (%) Ta = 25°C VCE = 10V VCE = 5V VCE = 0.4V Ta = 25°C IC (mA) 30 500 10 5 3 SAMPLE A 300 SAMPLE A SAMPLE B 1 0.5 0.3 0.1 0.3 VCE = 10V VCE = 5V VCE = 0.4V Current transfer ratio Collector current 100 SAMPLE B 50 0.5 1 3 5 10 30 50 100 0.3 0.5 1 3 5 10 30 50 100 Forward current IF (mA) Forward current IF (mA) IC – IF at RBE 100 Ta = 25°C 50 VCE = 5V 30 10 5 3 IF 1 0.5 0.3 0.1 0.1 RBE = ∞ 500kΩ 50kΩ RBE 100kΩ VCC 300 Ta = 25°C IF VCB IPB – IF (μs) IPB (mA) 100 30 IC VCB = 0V Base photo current Collector current 10 3 1 0.3 0.1 0.1 A VCB = 5V A 0.3 0.5 1 3 5 10 30 50 100 0.3 0.5 1 3 5 10 30 50 100 Forward current IF (mA) Forward current IF (mA) 6 2007-10-01 TLP131 ICEO – Ta 101 0.24 VCE(sat) – Ta IF = 5mA Ic = 1mA 0.20 100 Collector–emitter saturation voltage VCE(sat) (V) 0.16 Collector dark current ICEO (μA) VCE = 48V 1 0 −1 24V 10V 5V 0.12 0.08 0.04 1 0 −2 0 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (℃) 1 0 −3 1 0 −4 0 20 40 60 80 100 120 Ambient temperature Ta (℃) IC – Ta 100 VCE = 5V IF = 25mA 10mA 100 300 Switching Time – RL Ta = 25℃ IF = 16mA VCC = 5V RBE = 220kΩ 50 30 (mA) 5mA 10 50 Collector current IC Switching time (μs) tOFF ts 5 3 30 1mA 1 10 5 0.5 0.3 0.5mA 3 tON 0.1 -20 0 20 40 60 80 100 1 1 3 5 10 30 50 100 Ambient temperature Ta (℃) Load resistance RL (kΩ) 7 2007-10-01 TLP131 Switching Time – RBE 1000 500 Ta = 25℃ IF = 16mA VCC = 5V RL = 1.9kΩ 1000 Ta = 25°C IF = 16mA 500 VCC = 5V 300 Switching Time – RL 300 tOFF 100 100 tOFF Switching time (μs) Switching time (μs) 50 30 ts 50 30 ts 10 10 5 3 tON 5 3 tON 1 100k 300k 1M 3M ∞ 1 1 3 5 10 30 50 100 Base-emitter resistance RBE (Ω) Load resistance RL (Ω) 8 2007-10-01 TLP131 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01