TLP137

TLP137 TOSHIBA Photocoupler GaAs IRed & Photo−Transistor TLP137 Office Machine Programmable Controllers AC / DC−Input Module Telecommunication The TOSHIBA mini flat coupler TLP137 is a small outline coupler, suitable for surface mount assembly. TLP137 consists of a gallium arsenide infrared emitting diode, optically coupled to a photo transistor, and provides high CTR at low input current. TLP137 base terminal is for the improvement of speed, reduction of dark current, and enable operation. Unit in mm Collector−emitter voltage: 80V(min.) Current transfer ratio: 100%(min.) Rank BV: 200%(min.) Isolation voltage: 3750Vrms(min.) UL recognized: UL1577, file No. E67349 Current transfer ratio TOSHIBA Weight: 0.09 g 11−4C2 Classi− fication Rank BV Standard Current Transfer Ratio (min.) Ta = 25°C Ta =−25~75°C IF = 0.5mA IF = 1mA IF = 1mA VCE = 0.5V VCE = 1.5V VCE = 0.5V 200% 100% 100% 50% 100% 50% Marking Of Classi− fication BV BV, Blank Pin Configurations (top view) 1 6 5 (Note) Application type name for certification test, please use standard product type name, i.e. TLP137 (BV): TLP137 3 1 : Anode 3 : Cathode 4 : Emitter 5 : Collector 6 : Base 4 1 2007-10-01 TLP137 Absolute Maximum Ratings (Ta = 25°C) Characteristic Forward current Forward current derating (Ta ≥ 53°C) LED Peak forward current (100μs pulse, 100pps) Reverse voltage Junction temperature Collector−emitter voltage Collector−base voltage Emitter−collector voltage Detector Emitter−base voltage Collector current Peak collector current (10ms pulse, 100pps) Power dissipation Power dissipation derating (Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (AC, 1min., RH ≤ 60%) (Note 1) Symbol IF ΔIF / °C IFP VR Tj VCEO VCBO VECO VEBO IC ICP PC ΔPC / °C Tj Tstg Topr Tsol PT ΔPT / °C BVS Rating 50 −0.7 1 5 125 80 80 7 7 50 100 150 −1.5 125 −55~125 −55~100 260 200 −2.0 3750 Unit mA mA / °C A V °C V V V V mA mA mW mW / °C °C °C °C °C mW mW / °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 1) Device considered a two terminal device: Pins 1 and 3 shorted together and pins 4, 5 and 6 shorted together. 2 2007-10-01 TLP137 Individual Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector−base breakdown voltage Emitter−base breakdown voltage Detector Collector dark current Collector dark current Collector dark current DC forward current gain Capacitance (collector to emitter) Symbol VF IR CT Test Condition IF = 10mA V R = 5V V = 0, f = 1MHz Min. 1.0 ― ― 80 7 80 7 ― ― ― ― ― ― Typ. 1.15 ― 30 ― ― ― ― 10 2 0.5 0.1 1000 12 Max. 1.3 10 ― ― ― ― ― 100 50 10 ― ― ― Unit V μA pF V V V V nA μA μA nA ― pF V(BR)CEO IC = 0.5mA V(BR)ECO IE = 0.1mA V(BR)CBO IC = 0.1mA V(BR)EBO IE = 0.1mA ICEO ICER ICBO hFE CCE VCE = 48V VCE = 48V, Ta = 85°C VCE = 48V, Ta = 85°C RBE = 1MΩ VCB = 10V VCE = 5V, IC = 0.5mA V= 0, f = 1MHz Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 1mA, VCE = 0.5V Rank BV IF = 0.5mA, VCE = 1.5V Rank BV IF = 1mA, VCB = 5V IC = 0.5mA, IF = 1mA Collector-emitter saturation voltage Off−state collector current VCE(sat) IC = 1mA, IF = 1mA Rank BV IC(off) V F = 0.7V, VCE = 48V Min. 100 200 50 100 ― ― ― ― ― Typ. ― ― ― ― 5 ― 0.2 ― ― Max. 1200 1200 ― ― ― 0.4 ― 0.4 10 μA V Unit % Low input CTR Base photo−current IC / IF(low) IPB % μA 3 2007-10-01 TLP137 Coupled Electrical Characteristics (Ta = −25~75°C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 1mA, VCE = 0.5V Rank BV IF = 0.5mA, VCE = 1.5V Rank BV Min. 50 100 ― ― Typ. ― ― 50 100 Max. ― ― ― ― Unit % Low input CTR IC / IF(low) % Isolation Characteristics (Ta = 25°C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1MHz V = 500V AC, 1minute Isolation voltage BVS AC, 1second, in oil DC, 1 minute, in oil Min. ― 5×10 10 Typ. 0.8 10 14 Max. ― ― ― ― ― Unit pF Ω Vrms Vdc 3750 ― ― ― 10000 10000 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn-off time Turn−on time Storage time Turn-off time Symbol tr tf ton toff tON tS tOFF tON tS tOFF (Fig.1) RL = 4.7 kΩ RBE = OPEN VCC = 5 V, IF = 1.6mA (Fig.1) RL = 4.7kΩ RBE = 470kΩ VCC = 5 V, IF = 1.6mA VCC = 10V, IC = 2mA RL = 100Ω Test Condition Min. ― ― ― ― ― ― ― ― ― ― Typ. 8 8 10 8 10 50 300 12 30 100 Max. ― ― ― ― ― ― ― ― ― ― μs μs μs Unit Fig. 1 Switching time test circuit IF VCC RL RBE VCE IF tS VCE tON 4.5V 0.5V tOFF VCC 4 2007-10-01 TLP137 IF – Ta 100 200 PC – Ta 80 Allowable forward current IF (mA) 160 60 Allowable collector power dissipation PC (mw) 0 20 40 60 80 100 120 120 40 80 20 40 0 －20 0 －20 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Ambient temperature Ta (°C) IFP – DR 3000 PULSE WIDTH ≦ 100 μs Ta = 25°C 1000 100 50 Ta = 25°C IF – V F Pulse forward current IFP (mA) 500 300 (mA) IF Forward current 10－3 3 1 0 －2 3 10－1 3 100 30 10 5 3 100 50 30 1 0.5 0.3 10 3 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Duty cycle ratio DR Forward voltage VF (V) ⊿ VF / ⊿Ta － IF Forward voltage temperature coefficient ⊿VF / ⊿Ta(mV /ﾟ C) －3.2 1000 IFP – VFP (mA) 500 300 －2.8 －2.4 －2.0 －1.6 －1.2 IFP Pulse forward current 100 50 30 10 5 3 1 0.6 Pulse width ≦ 10 μs Repetitive frequency = 100 Hz Ta = 25°C －0.8 －0.4 0.1 0.3 0.5 1 3 5 10 30 50 1.0 1.4 1.8 2.2 2.6 3.0 Forward current IF (mA) Pulse forward voltage VFP (V) 5 2007-10-01 TLP137 IC – VCE 4 Ta = 25°C IF = 1.0mA 4 Ta = 25°C IC – VCE (mA) 3 0.8mA (mA) IF = 1.0mA 3 Collector Current IC Collector current IC 0.8mA 2 0.6mA 1 0.5mA 0.4mA 0.2mA 2 0.6mA 0.5mA 1 0.4mA 0.2mA 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage VCE(V) Collector-emitter voltage VCE (V) IC – IF 50 1000 IC / IF – IF IC / IF (%) Ta = 25°C 30 IC (mA) 10 5 3 Sample A 500 300 Sample A Current transfer ratio Collector current 1 0.5 0.3 Sample B 0.1 0.05 0.03 0.1 0.3 0.5 1 3 5 10 Ta = 25°C VCE = 5V VCE = 1.5V VCE = 0.5V Sample B 100 VCE = 5V VCE = 1.5V VCE = 0.5V 50 30 0.1 0.3 0.5 1 3 5 10 Forward current IF (mA) Forward current IF (mA) IC – IF at RBE 30 Ta=25°C VCE=5V 10 5 3 300 Ta=25°C IPB – IF (μA) IC (mA) 100 30 10 A RBE RBE IPB IF VCC IF A VCB VCB=0V VCB=5V Base photo current Collector current 1 0.5 3 1 0.3 0.1 0.1 0.3 RBE=∞ 500kΩ 100kΩ 50kΩ 0.1 0.1 0.3 0.5 1 3 5 10 0.3 0.5 1 3 5 10 Forward current IF (mA) Forward current IF (mA) 6 2007-10-01 TLP137 ICEO – Ta 101 0.16 VCE(sat) – Ta IF = 1mA IC = 0.5mA 0.14 Collector -emitter saturation voltage VCE (sat) (V) ID (ICEO) (μA) 100 0.12 VCE=48V 24V 10V 0.10 0.08 10 -1 0.06 Collector dark current 5V 0.04 10 -2 0.02 0 －40 －20 0 20 40 60 80 100 10-3 Ambient temperature Ta (°C) 10-4 0 20 40 60 80 100 120 Ambient temperature Ta (°C) IC – Ta 30 VCE=1.5V VCE=0.5V 300 Switching Time – RL IC (mA) tOFF (μs) 10 5 IF = 2mA 100 tS Switching time Collector current 1mA 3 0.5mA 1 50 30 tON 10 0.5 0.3 0.2mA 5 3 0.1 0.05 －20 0 20 40 60 80 100 1 1 3 5 10 30 50 100 Ta = 25°C IF=1.6mA VCC=5V RBE=470kΩ Ambient temperature Ta (°C) Load resistance RL (kΩ) 7 2007-10-01 TLP137 Switching Time – RBE 1000 500 Ta = 25°C IF=1.6mA tOFF 5000 Ta = 25°C 3000 IF=1.6mA VCC=5V Switching Time – RL (μs) (μs) VCC=5V 300 RL=4.7kΩ tOFF 1000 500 300 tS N 100 50 30 Switching time 100 50 30 tS N tON 10 5 3 10 1 100k 300k 1M 3M ∞ ５ 1 3 5 10 30 50 100 tON Base-emitter resistance RBE (Ω) Swithing time Load resistance RL (kΩ) 8 2007-10-01 TLP137 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01